公开(公告)号：US20170212145A1

公开(公告)日：2017-07-27

申请号：US15415034

申请日：2017-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeong-mi LEE ,  Jeong-ju PARK ,  Shi-yong YI ,  Eun-sung KIM ,  Seung-chul KWON ,  Sang-ouk KIM ,  Young-joo CHOI

IPC: G01Q60/28 ,  H01L21/67

CPC classification number: G01Q60/28 ,  G01Q60/42 ,  G01Q70/14 ,  H01L21/67288 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L28/00

Abstract: A method of forming a micropattern, a substrate surface inspection apparatus, a cantilever set for an atomic force microscope, and a method of analyzing a surface of a semiconductor substrate, and a probe tip the method including forming pinning patterns on a semiconductor substrate; forming a neutral pattern layer in spaces between the pinning patterns; and inspecting a surface of a guide layer that includes the pinning patterns and the neutral pattern layer by using an atomic force microscope (AFM).

公开(公告)号：US20170107317A1

公开(公告)日：2017-04-20

申请号：US15225201

申请日：2016-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNGCHUL KWON ,  Jeongju PARK ,  Shi-yong YI ,  Eun Sung KIM ,  Kyeongmi LEE ,  Joona BANG ,  Sanghoon WOO

IPC: C08F293/00 ,  H01L21/027

CPC classification number: C08F293/005 ,  B82Y40/00 ,  C08F12/20 ,  C08F2438/03 ,  G03F7/0002 ,  H01L21/0271

Abstract: A block copolymer includes a first polymer block and a second polymer block having different structures, and one of the first polymer block and the second polymer block has a halogen-substituted structure.