公开(公告)号：US10727078B2

公开(公告)日：2020-07-28

申请号：US15370290

申请日：2016-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Ju Park ,  Kyeongmi Lee ,  Seungchul Kwon ,  Eunsung Kim ,  Shiyong Yi

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/308 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/02

Abstract: A method of forming fine patterns includes forming a mask on an etching target, forming an anti-reflective layer on the mask, forming fixing patterns such that top surfaces of the anti-reflective layer and fixing patterns are exposed, forming a block copolymer layer including first and second polymer blocks, and phase-separating the block copolymer layer to form first patterns and second patterns on the anti-reflective layer and the fixing patterns. The first and second patterns include the first and second polymer blocks, respectively. The anti-reflective layer has a neutral, i.e., non-selective, interfacial energy with respect to the first and second polymer blocks. The fixing patterns have a higher interfacial energy with respect to the first polymer block than the second polymer block.

公开(公告)号：US10854465B2

公开(公告)日：2020-12-01

申请号：US16023836

申请日：2018-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Jeong Ju Park ,  Eunsung Kim ,  Hyunwoo Kim ,  Shiyong Yi

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033

Abstract: A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.

公开(公告)号：US10032638B2

公开(公告)日：2018-07-24

申请号：US15099945

申请日：2016-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Jeong Ju Park ,  Eunsung Kim ,  Hyunwoo Kim ,  Shiyong Yi

IPC: H01L21/311 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/033

Abstract: A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.

公开(公告)号：US20160343575A1

公开(公告)日：2016-11-24

申请号：US15099945

申请日：2016-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu MAEDA ,  Jeong Ju Park ,  Eunsung Kim ,  Hyunwoo Kim ,  Shiyong Yi

IPC: H01L21/308 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.

Abstract translation: 一种方法包括形成通过蚀刻目标层上的至少一个开口彼此间隔开的掩模图案，用包含不同性质的第一和第二聚合物嵌段的嵌段共聚物材料填充该开口，并退火嵌段共聚物材料以形成第一图案 和第二图案，分别与相邻的掩模图案的面对的侧壁接触的第一图案以及第一图案之间的至少一个第二图案。 第一图案包括第一聚合物嵌段，第二图案包括第二聚合物嵌段。