公开(公告)号：US20160343575A1

公开(公告)日：2016-11-24

申请号：US15099945

申请日：2016-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu MAEDA ,  Jeong Ju Park ,  Eunsung Kim ,  Hyunwoo Kim ,  Shiyong Yi

IPC: H01L21/308 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.

Abstract translation: 一种方法包括形成通过蚀刻目标层上的至少一个开口彼此间隔开的掩模图案，用包含不同性质的第一和第二聚合物嵌段的嵌段共聚物材料填充该开口，并退火嵌段共聚物材料以形成第一图案 和第二图案，分别与相邻的掩模图案的面对的侧壁接触的第一图案以及第一图案之间的至少一个第二图案。 第一图案包括第一聚合物嵌段，第二图案包括第二聚合物嵌段。

公开(公告)号：US20150227046A1

公开(公告)日：2015-08-13

申请号：US14620289

申请日：2015-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong Ju Park ,  Kyoungmi Kim ,  Jaeho Kim ,  Jungsik Choi

IPC: G03F7/16 ,  G03F7/30 ,  H01L21/027

CPC classification number: G03F7/168 ,  G03F7/0002 ,  G03F7/0382 ,  G03F7/091 ,  G03F7/30 ,  G03F7/40 ,  H01L21/0276 ,  H01L21/0337

Abstract: The inventive concepts provide methods of forming a semiconductor device. The method includes forming a neutral layer having a photosensitive property and a reflow property on an anti-reflective coating layer, performing an exposure process and a development process on the neutral layer to form a preliminary neutral pattern at least partially exposing the anti-reflective coating layer, heating the preliminary neutral pattern to form a neutral pattern, forming a block copolymer layer on the neutral pattern, and heating the block copolymer layer to form a block copolymer pattern. The block copolymer pattern includes a first pattern disposed on the anti-reflective coating layer exposed by the neutral pattern, and a second pattern disposed on the neutral pattern and chemically bonded to the first pattern.

Abstract translation: 本发明构思提供了形成半导体器件的方法。 该方法包括在抗反射涂层上形成具有感光性能和回流性能的中性层，对中性层进行曝光处理和显影处理，以形成初步中性图案，至少部分地使抗反射涂层曝光 加热初步中性图案以形成中性图案，在中性图案上形成嵌段共聚物层，并加热嵌段共聚物层以形成嵌段共聚物图案。 嵌段共聚物图案包括设置在由中性图案暴露的抗反射涂层上的第一图案和设置在中性图案上并化学键合到第一图案的第二图案。

公开(公告)号：US10727078B2

公开(公告)日：2020-07-28

申请号：US15370290

申请日：2016-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Ju Park ,  Kyeongmi Lee ,  Seungchul Kwon ,  Eunsung Kim ,  Shiyong Yi

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/308 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/02

Abstract: A method of forming fine patterns includes forming a mask on an etching target, forming an anti-reflective layer on the mask, forming fixing patterns such that top surfaces of the anti-reflective layer and fixing patterns are exposed, forming a block copolymer layer including first and second polymer blocks, and phase-separating the block copolymer layer to form first patterns and second patterns on the anti-reflective layer and the fixing patterns. The first and second patterns include the first and second polymer blocks, respectively. The anti-reflective layer has a neutral, i.e., non-selective, interfacial energy with respect to the first and second polymer blocks. The fixing patterns have a higher interfacial energy with respect to the first polymer block than the second polymer block.

公开(公告)号：US09535326B2

公开(公告)日：2017-01-03

申请号：US14620289

申请日：2015-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong Ju Park ,  Kyoungmi Kim ,  Jaeho Kim ,  Jungsik Choi

IPC: G03F7/26 ,  G03F7/16 ,  H01L21/027 ,  G03F7/30 ,  H01L21/033

CPC classification number: G03F7/168 ,  G03F7/0002 ,  G03F7/0382 ,  G03F7/091 ,  G03F7/30 ,  G03F7/40 ,  H01L21/0276 ,  H01L21/0337

Abstract: The inventive concepts provide methods of forming a semiconductor device. The method includes forming a neutral layer having a photosensitive property and a reflow property on an anti-reflective coating layer, performing an exposure process and a development process on the neutral layer to form a preliminary neutral pattern at least partially exposing the anti-reflective coating layer, heating the preliminary neutral pattern to form a neutral pattern, forming a block copolymer layer on the neutral pattern, and heating the block copolymer layer to form a block copolymer pattern. The block copolymer pattern includes a first pattern disposed on the anti-reflective coating layer exposed by the neutral pattern, and a second pattern disposed on the neutral pattern and chemically bonded to the first pattern.

Abstract translation: 本发明构思提供了形成半导体器件的方法。 该方法包括在抗反射涂层上形成具有感光性能和回流性能的中性层，对中性层进行曝光处理和显影处理，以形成初步中性图案，至少部分地使抗反射涂层曝光 加热初步中性图案以形成中性图案，在中性图案上形成嵌段共聚物层，并加热嵌段共聚物层以形成嵌段共聚物图案。 嵌段共聚物图案包括设置在由中性图案暴露的抗反射涂层上的第一图案和设置在中性图案上并化学键合到第一图案的第二图案。

公开(公告)号：US10854465B2

公开(公告)日：2020-12-01

申请号：US16023836

申请日：2018-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Jeong Ju Park ,  Eunsung Kim ,  Hyunwoo Kim ,  Shiyong Yi

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033

Abstract: A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.

公开(公告)号：US10032638B2

公开(公告)日：2018-07-24

申请号：US15099945

申请日：2016-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Jeong Ju Park ,  Eunsung Kim ,  Hyunwoo Kim ,  Shiyong Yi

IPC: H01L21/311 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/033

Abstract: A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.