公开(公告)号：US11742052B2

公开(公告)日：2023-08-29

申请号：US17319493

申请日：2021-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hyun Joo ,  Tae-Min Park ,  Hyungsoo Kim ,  Jaewoo Im ,  Won-Taeck Jung

IPC: G11C29/50 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/34 ,  H01L27/11556 ,  H01L27/11582 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H10B41/27 ,  H10B43/27

CPC classification number: G11C29/50004 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/3459 ,  H01L24/08 ,  H01L25/0657 ,  H01L25/18 ,  H10B41/27 ,  H10B43/27 ,  G11C2029/5004 ,  H01L2224/08145 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: Disclosed is a nonvolatile memory device, which includes a memory cell array including cell strings, a row decoder connected with a ground selection transistor of each of the cell strings through a ground selection line, connected with memory cells of each of the cell strings through word lines, and connected with a string selection transistor of each of the cell strings through a string selection line, and a page buffer connected with the cell strings through bit lines. In a first period of a check operation, the page buffer applies a first bias voltage to the bit lines, and the row decoder applies a turn-off voltage to the ground selection line, a turn-on voltage to the string selection line, and a first check voltage to the word lines. In a second period of the check operation, the page buffer senses first changes of voltages of the bit lines.

公开(公告)号：US09570176B2

公开(公告)日：2017-02-14

申请号：US14668544

申请日：2015-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-Taeck Jung ,  Tae-Hong Kwon ,  Tae-Min Park ,  Ohsuk Kwon

IPC: G11C11/34 ,  G11C16/10 ,  G11C16/26 ,  G11C7/04 ,  G11C8/12 ,  G11C16/08

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C8/12 ,  G11C16/08 ,  G11C16/26

Abstract: An operating method of a nonvolatile memory device includes determining whether a memory block is a selected block, and when the memory block is not the selected block, determining whether the memory block shares a block word line with the selected block. The method further includes applying an unselected block word line voltage to word lines of the memory block when the memory block shares the block word line with the selected block, and floating the word lines of the memory block when the memory block does not share the block word line with the selected block.

Abstract translation: 非易失性存储器件的操作方法包括确定存储器块是否是所选择的块，以及当存储器块不是所选择的块时，确定存储器块是否与所选择的块共享块字线。 该方法还包括当存储器块与所选择的块共享块字线时将未选择的块字线电压施加到存储器块的字线，并且当存储器块不共享块时浮置存储器块的字线 字线与所选块。