公开(公告)号：US20220211284A1

公开(公告)日：2022-07-07

申请号：US17573046

申请日：2022-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehyeon Kim ,  Donguk Kwak ,  Daehyeong Lim ,  Daeung Jeong ,  Jeongmin Park

IPC: A61B5/0225 ,  A61B5/00 ,  A61B5/024

Abstract: An electronic device and a method for controlling the electronic device are provided. The electronic device includes a motion sensor and optical sensors. Each of the optical sensors includes a light emitter and a light receiver. The optical sensors are separately driven to determine a respective signal characteristic of each of the optical sensors. A current state of an object to be measured is determined, based on at least one signal received through the motion sensor or the optical sensors. A light emitter of at least one of the optical sensors is driven, based on the respective signal characteristics of the optical sensors according to the current state of the object to be measured. Based on the respective signal characteristics of the optical sensors, a light signal sensed through a light receiver of at least one of the optical sensors is selected and received.

公开(公告)号：US11246494B2

公开(公告)日：2022-02-15

申请号：US16701740

申请日：2019-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Cho ,  Taehyeon Kim ,  Seunghyun Lee ,  Jeongsu Lee ,  Daehyeong Lim ,  Daniel Joe ,  Seongmin Je

IPC: A61B5/00 ,  A61B5/0205 ,  A61B5/024

Abstract: Provided is an electronic device including a housing; a battery; a user interface; a photoplethysmogram (PPG) sensor including a light receiving module exposed through a portion of the housing, at least one light emitting diode (LED), and at least one photodiode; a processor operatively connected to the battery, the user interface, and the PPG sensor; and a memory. According to an embodiment, the memory stores instructions that, when executed, cause the processor to determine whether the PPG sensor is facing a surface of an external object having a reference color, determine whether to perform a test of the PPG sensor based on whether the PPG sensor is facing the surface, receive data from the PPG sensor by operating the PPG sensor in response to determining to perform the test, and perform calibration of the PPG sensor based on at least a portion of the received data. Other embodiments are possible.

公开(公告)号：US12257037B2

公开(公告)日：2025-03-25

申请号：US17573046

申请日：2022-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehyeon Kim ,  Donguk Kwak ,  Daehyeong Lim ,  Daeung Jeong ,  Jeongmin Park

IPC: A61B5/0225 ,  A61B5/00 ,  A61B5/024

Abstract: An electronic device and a method for controlling the electronic device are provided. The electronic device includes a motion sensor and optical sensors. Each of the optical sensors includes a light emitter and a light receiver. The optical sensors are separately driven to determine a respective signal characteristic of each of the optical sensors. A current state of an object to be measured is determined, based on at least one signal received through the motion sensor or the optical sensors. A light emitter of at least one of the optical sensors is driven, based on the respective signal characteristics of the optical sensors according to the current state of the object to be measured. Based on the respective signal characteristics of the optical sensors, a light signal sensed through a light receiver of at least one of the optical sensors is selected and received.

公开(公告)号：US20240006485A1

公开(公告)日：2024-01-04

申请号：US18196081

申请日：2023-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seokhyeon Yoon ,  Taehyeon Kim ,  Seunghun Lee ,  Hyeongrae Kim

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/786 ,  H01L29/775 ,  H01L29/423

CPC classification number: H01L29/0673 ,  H01L29/66545 ,  H01L29/78696 ,  H01L29/775 ,  H01L29/42392

Abstract: A semiconductor device include first and second active patterns, first and second gate structures, and first and second source/drain layers. The first and second active patterns extend on the first and second regions in a first direction. The first and second gate structures are formed on the first and second active patterns, and extend in a second direction. The first and second source/drain layers are formed on the first and second active patterns adjacent to the first and second gate structures. The first active pattern includes a first well having first and second impurity regions. The second active pattern includes a second well having third and fourth impurity regions. A width in the second direction of the first impurity region is greater than that of the second impurity region. A width in the second direction of the third impurity region is smaller than that of the fourth impurity region.

公开(公告)号：US11322494B2

公开(公告)日：2022-05-03

申请号：US17015307

申请日：2020-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin Choi ,  Taehyeon Kim ,  Hongshik Shin ,  Taegon Kim ,  Jaeyoung Park ,  Yuichiro Sasaki

IPC: H01L27/092 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L21/225 ,  H01L29/161 ,  H01L29/165 ,  H01L21/285

Abstract: A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.

公开(公告)号：US10804269B2

公开(公告)日：2020-10-13

申请号：US16419318

申请日：2019-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin Choi ,  Taehyeon Kim ,  Hongshik Shin ,  Taegon Kim ,  Jaeyoung Park ,  Yuichiro Sasaki

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L21/225 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/161 ,  H01L29/165 ,  H01L21/285

Abstract: A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.

公开(公告)号：US10355000B2

公开(公告)日：2019-07-16

申请号：US15793442

申请日：2017-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungin Choi ,  Taehyeon Kim ,  Hongshik Shin ,  Taegon Kim ,  Jaeyoung Park ,  Yuichiro Sasaki

IPC: H01L27/092 ,  H01L21/82 ,  H01L21/768 ,  H01L21/225 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/161 ,  H01L29/165

Abstract: A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.