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公开(公告)号：US09553119B2
公开(公告)日：2017-01-24
申请号：US14849187
申请日：2015-09-09
发明人： Joon-Young Choi , Taegon Kim , JunHyun Cho
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/14638 , H01L27/1464 , H01L27/14685 , H01L27/14689 , H01L27/14698
摘要： Methods of forming an image sensor are provided. A method of forming an image sensor includes forming a trench in a substrate to define a unit pixel region of the substrate. The method includes forming an in-situ-doped passivation layer on an exposed surface of the trench. The method includes forming a capping pattern on the in-situ-doped passivation layer, in the trench. The method includes forming a photoelectric conversion region in the unit pixel region. Moreover, the method includes forming a floating diffusion region in the unit pixel region.
摘要翻译： 提供了形成图像传感器的方法。 形成图像传感器的方法包括在衬底中形成沟槽以限定衬底的单位像素区域。 该方法包括在沟槽的暴露表面上形成原位掺杂的钝化层。 该方法包括在沟槽中的原位掺杂钝化层上形成封盖图案。 该方法包括在单位像素区域中形成光电转换区域。 此外，该方法包括在单位像素区域中形成浮动扩散区域。
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公开(公告)号：US20160079288A1
公开(公告)日：2016-03-17
申请号：US14849187
申请日：2015-09-09
发明人： Joon-Young Choi , Taegon Kim , JunHyun Cho
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/14638 , H01L27/1464 , H01L27/14685 , H01L27/14689 , H01L27/14698
摘要： Methods of forming an image sensor are provided. A method of forming an image sensor includes forming a trench in a substrate to define a unit pixel region of the substrate. The method includes forming an in-situ-doped passivation layer on an exposed surface of the trench. The method includes forming a capping pattern on the in-situ-doped passivation layer, in the trench. The method includes forming a photoelectric conversion region in the unit pixel region. Moreover, the method includes forming a floating diffusion region in the unit pixel region.
摘要翻译： 提供了形成图像传感器的方法。 形成图像传感器的方法包括在衬底中形成沟槽以限定衬底的单位像素区域。 该方法包括在沟槽的暴露表面上形成原位掺杂的钝化层。 该方法包括在沟槽中的原位掺杂钝化层上形成封盖图案。 该方法包括在单位像素区域中形成光电转换区域。 此外，该方法包括在单位像素区域中形成浮动扩散区域。
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公开(公告)号：US20130171744A1
公开(公告)日：2013-07-04
申请号：US13715099
申请日：2012-12-14
发明人： JONG-HOON KANG , Taegon Kim , Hanmei Choi , Eunyoung Jo , Gonsu Kang , Sungho Kang , Sungho Heo
IPC分类号： H01L21/324
CPC分类号： H01L21/324 , H01L21/67115 , H01L21/67288 , H01L21/681 , H01L22/10 , H01L22/12 , H01L22/20
摘要： A method of thermally treating a wafer includes loading a wafer into a process chamber having one or more regions of uniform temperature gradient and one or more regions of non-uniform temperature gradient. A defect is detected in the wafer. The wafer is aligned to position the defect within one of the one or more regions of uniform temperature gradient. A rapid thermal process is performed on the wafer in the process chamber while the defect is positioned within one of the one or more regions of uniform temperature gradient.
摘要翻译： 一种热处理晶片的方法包括将晶片装载到具有一个或多个均匀温度梯度区域和一个或多个不均匀温度梯度区域的处理室中。 在晶片中检测到缺陷。 将晶片对准以将缺陷定位在均匀温度梯度的一个或多个区域之一内。 在处理室中的晶片上执行快速热处理，同时将缺陷定位在均匀温度梯度的一个或多个区域之一内。
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公开(公告)号：US11380760B2
公开(公告)日：2022-07-05
申请号：US17028042
申请日：2020-09-22
发明人： Kyungin Choi , Hyunchul Song , Sunjung Kim , Taegon Kim , Seong Hoon Jeong
IPC分类号： H01L29/06 , H01L21/02 , H01L21/3105 , H01L21/3115 , H01L21/762 , H01L21/8238 , H01L27/092 , H01L27/11 , H01L29/08 , H01L21/308 , H01L29/66 , H01L27/088 , H01L21/8234 , H01L29/165 , H01L29/78 , H01L29/423
摘要： A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.
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公开(公告)号：US10222486B2
公开(公告)日：2019-03-05
申请号：US15174029
申请日：2016-06-06
发明人： Yongchul Kim , Taegon Kim , Sangeui Lee
摘要： Provided are a radiation detector and a radiographic apparatus including the same. The radiation detector may have high quantum efficiency due to use of a plurality of nano-waveguides that extend from an incident end thereof to an exit end thereof and are configured to generate scintillation as radiation rays penetrate therethrough or a photoconductor.
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公开(公告)号：US09443932B2
公开(公告)日：2016-09-13
申请号：US14330777
申请日：2014-07-14
发明人： Ki-Chul Kim , Joonghan Shin , Bongjin Kuh , Taegon Kim , Hanmei Choi
IPC分类号： H01L21/70 , H01L29/06 , H01L27/092 , H01L21/8238
CPC分类号： H01L29/0696 , H01L21/823807 , H01L21/845 , H01L27/092 , H01L27/1211
摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a plurality of unit cells provided on a semiconductor substrate. Each of the unit cells may include a buried insulating pattern buried in the semiconductor substrate, a first active pattern provided on the buried insulating pattern, and a second active pattern provided on the buried insulating pattern and spaced apart from the first active pattern. The buried insulating pattern may define a unit cell region, in which each of the unit cells may be disposed.
摘要翻译： 提供半导体器件及其制造方法。 半导体器件可以包括设置在半导体衬底上的多个单元电池。 每个单电池可以包括埋在半导体衬底中的掩埋绝缘图案，设置在掩埋绝缘图案上的第一有源图案和设置在掩埋绝缘图案上并与第一有源图案间隔开的第二有源图案。 埋置的绝缘图案可以限定单位单元区域，其中可以布置每个单位单元。
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公开(公告)号：US11538916B2
公开(公告)日：2022-12-27
申请号：US17231126
申请日：2021-04-15
发明人： Yoontae Hwang , Wandon Kim , Geunwoo Kim , Heonbok Lee , Taegon Kim , Hanki Lee
IPC分类号： H01L29/45 , H01L29/78 , H01L29/417 , H01L23/532 , H01L23/485 , H01L23/522 , H01L29/66 , H01L21/285 , H01L29/08
摘要： A semiconductor device including a substrate; a fin active region on the substrate and extending in a first direction; a gate structure extending across the fin active region and extending in a second direction; a source/drain region in the fin active region on a side of the gate structure; an insulating structure covering the gate structure and the source/drain region; and contact structures penetrating through the insulating structure and respectively connected to the source/drain region and the gate structure, wherein one of the contact structures includes a seed layer on the gate structure or the source/drain regions and including lower and upper regions, the lower region having a first grain size and the upper region being amorphous or having a grain size different from the first grain size, and a contact plug on an upper region of the seed layer and having a second grain size.
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公开(公告)号：US10804269B2
公开(公告)日：2020-10-13
申请号：US16419318
申请日：2019-05-22
发明人： Kyungin Choi , Taehyeon Kim , Hongshik Shin , Taegon Kim , Jaeyoung Park , Yuichiro Sasaki
IPC分类号： H01L27/092 , H01L29/66 , H01L29/78 , H01L29/417 , H01L21/225 , H01L21/768 , H01L21/8238 , H01L29/161 , H01L29/165 , H01L21/285
摘要： A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.
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公开(公告)号：US20200286960A1
公开(公告)日：2020-09-10
申请号：US16881444
申请日：2020-05-22
发明人： Jiwhan Kim , Seungyeon Kwak , Jongsoo Kim , Taegon Kim , Sunghun Lee , Deukseok Chung
IPC分类号： H01L27/32 , H01L51/52 , G02F1/13357 , G02F2/02
摘要： A display apparatus includes a light-source substrate portion which generates light; and a color control portion to which the generated light from the light-source substrate portion is incident and at which color of the generated light is adjusted to define a color-converted light having a color different from that of the generated light. The color control portion includes: an exit surface through which the color-converted light exits the color control portion; a substrate including a plurality of concave portions defined therein, each of the concave portions extended along a direction from the light-source substrate portion to the exit surface of the color control portion; and a plurality of color conversion members respectively in the plurality of concave portions, the color conversion members each including a color-converting material which converts the color of the generated light to the color of the color-converted light.
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公开(公告)号：US10355000B2
公开(公告)日：2019-07-16
申请号：US15793442
申请日：2017-10-25
发明人： Kyungin Choi , Taehyeon Kim , Hongshik Shin , Taegon Kim , Jaeyoung Park , Yuichiro Sasaki
IPC分类号： H01L27/092 , H01L21/82 , H01L21/768 , H01L21/225 , H01L21/8238 , H01L29/66 , H01L29/78 , H01L29/161 , H01L29/165
摘要： A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.
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