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公开(公告)号:US20190237382A1
公开(公告)日:2019-08-01
申请号:US16148471
申请日:2018-10-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jae Choon KIM , Woo Hyun PARK , Eon Soo JANG , Young Sang CHO
IPC: H01L23/367 , H01L23/538 , H01L23/31 , H01L23/00 , H01L21/48 , H01L21/683
CPC classification number: H01L23/367 , H01L21/4857 , H01L21/6835 , H01L23/3128 , H01L23/5383 , H01L23/5386 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L25/105 , H01L2221/68345 , H01L2221/68359 , H01L2224/211 , H01L2224/221 , H01L2225/1035 , H01L2225/1058 , H01L2225/1094
Abstract: A semiconductor package includes a semiconductor chip having a first surface that is an active surface and a second surface opposing the first surface, a first redistribution portion disposed on the first surface, the first redistribution portion including a lower wiring layer electrically connected to the semiconductor chip, a thermal conductive layer disposed on the second surface of the semiconductor chip, a sealing layer surrounding a side surface of the semiconductor chip and a side surface of the thermal conductive layer, and a second redistribution portion disposed on the sealing layer, the second redistribution portion including a first upper wiring layer connected to the thermal conductive layer, the second redistribution portion including a second upper wiring layer electrically connected to the semiconductor chip.
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公开(公告)号:US20190057918A1
公开(公告)日:2019-02-21
申请号:US15922478
申请日:2018-03-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Woo Hyun PARK , Jae Choon KIM
IPC: H01L23/31 , H01L27/146 , H01L25/065 , H01L23/532 , H01L23/528 , H01L23/34 , H01L21/768 , H04N5/225
CPC classification number: H01L23/3114 , H01L21/76877 , H01L23/345 , H01L23/5283 , H01L23/5329 , H01L25/0657 , H01L27/14603 , H01L27/14634 , H01L27/14636 , H01L27/14643 , H01L27/1469 , H04N5/2253
Abstract: A chip structure is provided. The chip structure includes: a first lower chip structure; and an upper chip structure on the first lower chip structure and having a pixel array region. The first lower chip structure includes: a first lower semiconductor substrate having a first side and a second side opposing each other; a first portion on the first side of the first lower semiconductor substrate; and a second portion on the second side of the first lower semiconductor substrate, the first portion of the first lower chip structure includes a gate wiring, the second portion of the first lower chip structure includes a second side wiring and a heating element, and the heating element is on the same plane as that of the second side wiring and has a length greater than that of the second side wiring.
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