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1.发明授权公开(公告)号：US11410026B2
公开(公告)日：2022-08-09
申请号：US16191906
申请日：2018-11-15
发明人： Woo-Yeong Cho , Seong-Il O , Hak-Soo Yu , Min-Su Choi
IPC分类号： G06N3/063 , G06N3/04 , H01L27/24 , H01L25/065 , G06F15/163
摘要： Provided are a neuromorphic circuit having a three-dimensional stack structure and a semiconductor device including the neuromorphic circuit. The semiconductor device includes a first semiconductor layer including one or more synaptic cores, each synaptic core including neural circuits arranged to perform neuromorphic computation. A second semiconductor layer is stacked on the first semiconductor layer and includes an interconnect forming a physical transfer path between synaptic cores. A third semiconductor layer is stacked on the second semiconductor layer and includes one or more synaptic cores. At least one through electrode is formed, through which information is transferred between the first through third semiconductor layers. Information from a first synaptic core in the first semiconductor layer is transferred to a second synaptic core in the third semiconductor layer via the one of more through electrodes and an interconnect of the second semiconductor layer.
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公开(公告)号：US09460816B2
公开(公告)日：2016-10-04
申请号：US14444856
申请日：2014-07-28
发明人： Jae-Youn Youn , Chul-Woo Park , Hak-Soo Yu
CPC分类号： G11C29/886 , G06F11/1048 , G11C29/76
摘要： The semiconductor memory device includes a memory cell array and an error correction code (ECC) circuit. The memory cell array is divided into a first memory region and a second memory region. Each of the first and second memory regions includes a plurality of pages each page including a plurality of memory cells connected to a word line. The ECC circuit corrects single-bit errors of the first memory region using parity bits. The first memory region provides a consecutive address space to an external device by correcting the single-bit errors using the ECC circuit and the second memory region is reserved for repairing at least one of a first failed page of the first memory region or a second failed page of the second memory region.
摘要翻译： 半导体存储器件包括存储单元阵列和纠错码（ECC）电路。 存储单元阵列被分成第一存储区和第二存储区。 第一和第二存储器区域中的每一个包括多个页面，每个页面包括连接到字线的多个存储器单元。 ECC电路使用奇偶校验位校正第一存储区域的单位错误。 第一存储器区域通过使用ECC电路校正单位错误来向外部设备提供连续的地址空间，并且第二存储器区域被保留用于修复第一存储器区域的第一故障页面或第二存储器区域中的至少一个 第二存储器区域的页面。
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公开(公告)号：US12087388B2
公开(公告)日：2024-09-10
申请号：US17504918
申请日：2021-10-19
发明人： Hak-Soo Yu , Namsung Kim , Kyomin Sohn , Seongil O , Sukhan Lee
IPC分类号： G11C7/10 , G11C5/02 , G11C11/408 , G11C11/409
CPC分类号： G11C7/1045 , G11C5/025 , G11C7/1039 , G11C11/4087 , G11C11/409
摘要： A memory device includes a memory cell array, signal lines, a mode selector circuit, a command converter circuit, and an internal processor. The memory cell array includes first and second memory regions. The mode selector circuit is configured to generate a processing mode selection signal for controlling the memory device to enter an internal processing mode based on the address received together with the command. The command converter circuit is configured to convert the received command into an internal processing operation command in response to activation of the internal processing mode selection signal. The internal processor is configured to perform an internal processing operation on the first memory region in response to the internal processing operation command, in the internal processing mode.
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公开(公告)号：US10592467B2
公开(公告)日：2020-03-17
申请号：US15493292
申请日：2017-04-21
发明人： Je Min Ryu , Reum Oh , Hak-Soo Yu
摘要： An operation method of a semiconductor memory device including a memory cell array and an internal processor configured to perform an internal processing operation includes receiving at the memory device a first mode indicator that indicates whether the memory device should operate in a processor mode or in a normal mode, receiving at the memory device processing information for the memory device, when the first mode indicator indicates that the memory device should operate in the processor mode, storing the processing information in a first memory cell region of the memory cell array, using the stored processing information to perform internal processing by the internal processor, and storing a result of the internal processing in the memory cell array.
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公开(公告)号：US09824755B2
公开(公告)日：2017-11-21
申请号：US14465995
申请日：2014-08-22
发明人： Young-Soo Sohn , Chul-Woo Park , Kwang-Il Park , Hak-Soo Yu
CPC分类号： G11C14/0018 , G11C11/40 , G11C29/702 , G11C29/785 , G11C2029/4402
摘要： A semiconductor memory device may include a cell array comprising a plurality of memory cells, each memory cell connected to a word line and a bit line, the cell array divided into a plurality of blocks, each block including a plurality of word lines, the plurality of blocks including at least a first defective block; a nonvolatile storage circuit configured to store address information of the first defective block, and to output the address information to an external device; and a fuse circuit configured to cut off an activation of word lines of the first defective block.
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公开(公告)号：US09558805B2
公开(公告)日：2017-01-31
申请号：US14083033
申请日：2013-11-18
发明人： Uk-Song Kang , Chul-Woo Park , Hak-Soo Yu , Jong-Pil Son
IPC分类号： G06F13/00 , G11C11/406 , G11C11/408
CPC分类号： G11C11/40607 , G11C11/40603 , G11C11/40622 , G11C11/4087
摘要： A memory module includes a plurality of memory devices and a buffer chip. The buffer chip manages the memory devices. The buffer chip includes a refresh control circuit that groups a plurality of memory cell rows of the memory devices into a plurality of groups according to a data retention time of tire memory cell rows. The buffer chip selectively refreshes each of the plurality of groups in each of a plurality of refresh time regions that are periodically repeated and applies respective refresh periods to the plurality of groups, respectively.
摘要翻译： 存储器模块包括多个存储器件和缓冲器芯片。 缓冲芯片管理存储器件。 缓冲芯片包括根据轮胎存储单元行的数据保持时间将存储器件的多个存储单元行分组成多个组的刷新控制电路。 缓冲器芯片有选择地刷新周期性地重复的多个刷新时间区域中的每一个中的多个组中的每一个，并将各个刷新周期分别应用于多个组。
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公开(公告)号：US12106107B2
公开(公告)日：2024-10-01
申请号：US18194174
申请日：2023-03-31
发明人： Sukhan Lee , Shinhaeng Kang , Namsung Kim , Seongil O , Hak-Soo Yu
CPC分类号： G06F9/30145 , G06F9/321 , G06F15/7821
摘要： A memory device includes a memory having a memory bank, a processor in memory (PIM) circuit, and control logic. The PIM circuit includes instruction memory storing at least one instruction provided from a host. The PIM circuit is configured to process an operation using data provided by the host or data read from the memory bank and to store at least one instruction provided by the host. The control logic is configured to decode a command/address received from the host to generate a decoding result and to perform a control operation so that one of i) a memory operation on the memory bank is performed and ii) the PIM circuit performs a processing operation, based on the decoding result. A counting value of a program counter instructing a position of the instruction memory is controlled in response to the command/address instructing the processing operation be performed.
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8.发明授权公开(公告)号：US11663008B2
公开(公告)日：2023-05-30
申请号：US16814462
申请日：2020-03-10
发明人： Sukhan Lee , Shinhaeng Kang , Namsung Kim , Seongil O , Hak-Soo Yu
CPC分类号： G06F9/30145 , G06F9/321 , G06F15/7821
摘要： A memory device includes a memory having a memory bank, a processor in memory (PIM) circuit, and control logic. The PIM circuit includes instruction memory storing at least one instruction provided from a host. The PIM circuit is configured to process an operation using data provided by the host or data read from the memory bank and to store at least one instruction provided by the host. The control logic is configured to decode a command/address received from the host to generate a decoding result and to perform a control operation so that one of i) a memory operation on the memory bank is performed and ii) the PIM circuit performs a processing operation, based on the decoding result. A counting value of a program counter instructing a position of the instruction memory is controlled in response to the command/address instructing the processing operation be performed.
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9.发明申请公开(公告)号：US20200293319A1
公开(公告)日：2020-09-17
申请号：US16814462
申请日：2020-03-10
发明人： Sukhan Lee , Shinhaeng Kang , Namsung Kim , Seongil O , Hak-Soo Yu
摘要： A memory device includes a memory having a memory bank, a processor in memory (PIM) circuit, and control logic. The PIM circuit includes instruction memory storing at least one instruction provided from a host. The PIM circuit is configured to process an operation using data provided by the host or data read from the memory bank and to store at least one instruction provided by the host. The control logic is configured to decode a command/address received from the host to generate a decoding result and to perform a control operation so that one of i) a memory operation on the memory bank is performed and ii) the PIM circuit performs a processing operation, based on the decoding result. A counting value of a program counter instructing a position of the instruction memory is controlled in response to the command/address instructing the processing operation be performed.
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公开(公告)号：US10768824B2
公开(公告)日：2020-09-08
申请号：US16418502
申请日：2019-05-21
发明人： Hak-Soo Yu , Je-Min Ryu , Reum Oh , Pavan Kumar Kasibhatla , Seok-In Hong
摘要： A stacked memory includes a logic semiconductor die, a plurality of memory semiconductor dies stacked with the logic semiconductor die, a plurality of through-silicon vias (TSVs) electrically connecting the logic semiconductor die and the memory semiconductor dies, a global processor disposed in the logic semiconductor die and configured to perform a global sub process corresponding to a portion of a data process, a plurality of local processors respectively disposed in the memory semiconductor dies and configured to perform local sub processes corresponding to other portions of the data process and a plurality of memory integrated circuits respectively disposed in the memory semiconductor dies and configured to store data associated with the data process.
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