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    High electron mobility transistor and method of manufacturing the same
    2.
    发明授权
    High electron mobility transistor and method of manufacturing the same 有权
    高电子迁移率晶体管及其制造方法

    公开(公告)号：US08907377B2

    公开(公告)日：2014-12-09

    申请号：US13752821

    申请日：2013-01-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul Jeon ,  Ki-yeol Park ,  Young-hwan Park ,  Jai-kwang Shin ,  Jae-joon Oh ,  Hyuk-soon Choi ,  Jong-bong Ha

    IPC: H01L29/66 ,  H01L29/778 ,  H01L29/417 ,  H01L29/40 ,  H01L29/20

    CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

    Abstract: A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.

    Abstract translation: 公开了一种较高电子迁移率晶体管（HEMT）及其制造方法。 根据示例实施例，HEMT可以包括位于沟道层和沟道供应层中的至少一个上的沟道层，源电极和漏电极上的沟道供应层，源极和源极之间的栅电极 漏电极，以及源极焊盘和漏极焊盘。 源极焊盘和漏极焊盘分别与源电极和漏电极电接触。 源极焊盘和漏极焊盘中的至少一个的至少一部分延伸到源电极和漏电极中的至少一个源极焊盘和漏极焊盘与其电接触的相应的一个。

    Nitride-based semiconductor device
    3.
    发明授权
    Nitride-based semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US09379102B2

    公开(公告)日：2016-06-28

    申请号：US13926553

    申请日：2013-06-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul Jeon ,  Ki-yeol Park ,  Young-hwan Park ,  Jai-kwang Shin ,  Jae-joon Oh

    IPC: H01L29/778 ,  H01L27/06 ,  H01L21/8252

    CPC classification number: H01L27/0629 ,  H01L21/8252 ,  H01L27/0605

    Abstract: A nitride-based semiconductor diode includes a substrate, a first semiconductor layer disposed on the substrate, and a second semiconductor layer disposed on the first semiconductor layer. The first and second semiconductor layers include a nitride-based semiconductor. A first portion of the second semiconductor layer may have a thickness thinner than a second portion of the second semiconductor layer. The diode may further include an insulating layer disposed on the second semiconductor layer, a first electrode covering the first portion of the second semiconductor layer and forming an ohmic contact with the first semiconductor layer and the second semiconductor layer, and a second electrode separated from the first electrode, the second electrode forming an ohmic contact with the first semiconductor layer and the second semiconductor layer.

    Abstract translation: 氮化物系半导体二极管包括衬底，设置在衬底上的第一半导体层以及设置在第一半导体层上的第二半导体层。 第一和第二半导体层包括氮化物基半导体。 第二半导体层的第一部分可以具有比第二半导体层的第二部分薄的厚度。 二极管还可以包括设置在第二半导体层上的绝缘层，覆盖第二半导体层的第一部分并与第一半导体层和第二半导体层形成欧姆接触的第一电极，以及与第二半导体层分开的第二电极 第一电极，第二电极与第一半导体层和第二半导体层形成欧姆接触。

    Semiconductor devices including a first and second HFET and methods of manufacturing the same
    4.
    发明授权
    Semiconductor devices including a first and second HFET and methods of manufacturing the same 有权
    包括第一和第二HFET的半导体器件及其制造方法

    公开(公告)号：US09053964B2

    公开(公告)日：2015-06-09

    申请号：US13922395

    申请日：2013-06-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul Jeon ,  Woong-je Sung ,  Jai-kwang Shin ,  Jae-joon Oh

    IPC: H01L31/0328 ,  H01L27/088 ,  H01L29/66 ,  H01L29/778 ,  H01L21/8252 ,  H01L27/06 ,  H01L27/085 ,  H01L29/20

    CPC classification number: H01L27/0883 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0694 ,  H01L27/085 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

    Abstract: Example embodiments relate to semiconductor devices and/or methods of manufacturing the same. According to example embodiments, a semiconductor device may include a first heterojunction field effect transistor (HFET) on a first surface of a substrate, and a second HFET. A second surface of the substrate may be on the second HFET. The second HFET may have different properties (characteristics) than the first HFET. One of the first and second HFETs may be of an n type, while the other thereof may be of a p type. The first and second HFETs may be high-electron-mobility transistors (HEMTs). One of the first and second HFETs may have normally-on properties, while the other thereof may have normally-off properties.

    Abstract translation: 示例性实施例涉及半导体器件和/或其制造方法。 根据示例实施例，半导体器件可以包括在衬底的第一表面上的第一异质结场效应晶体管（HFET）和第二HFET。 衬底的第二表面可以在第二HFET上。 第二HFET可以具有与第一HFET不同的特性（特性）。 第一和第二HFET中的一个可以是n型，而另一个可以是p型。 第一和第二HFET可以是高电子迁移率晶体管（HEMT）。 第一和第二HFET中的一个可以具有通常的属性，而另一个可以具有正常的属性。

    Electronic device including transistor and method of operating the same
    6.
    发明授权
    Electronic device including transistor and method of operating the same 有权
    包括晶体管的电子器件及其操作方法

    公开(公告)号：US09306544B2

    公开(公告)日：2016-04-05

    申请号：US13789884

    申请日：2013-03-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul Jeon ,  Ki-yeol Park ,  Young-hwan Park ,  Jai-kwang Shin ,  Jae-joon Oh

    IPC: H03B1/00 ,  H03K3/012 ,  H03K17/687

    CPC classification number: H03K3/012 ,  H03K17/6871 ,  H03K2017/6875

    Abstract: An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode.

    Abstract translation: 电子设备可以包括具有常开特性的第一晶体管; 连接到第一晶体管并具有常关特性的第二晶体管; 恒压施加单元，被配置为向所述第一晶体管的栅极施加恒定电压; 以及切换单元，被配置为向第二晶体管施加切换信号。 第一晶体管可以是高电子迁移率晶体管（HEMT）。 第二晶体管可以是场效应晶体管（FET）。 恒压施加单元可以包括连接到第一晶体管的栅极的二极管; 和连接到二极管的恒流源。

    High electron mobility transistor and method of manufacturing the same
    7.
    发明授权
    High electron mobility transistor and method of manufacturing the same 有权
    高电子迁移率晶体管及其制造方法

    公开(公告)号：US09252255B2

    公开(公告)日：2016-02-02

    申请号：US14085121

    申请日：2013-11-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong-seob Kim ,  In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Woo-chul Jeon ,  Hyuk-soon Choi ,  Sun-kyu Hwang

    IPC: H01L29/66 ,  H01L29/778 ,  H01L29/10 ,  H01L29/417 ,  H01L29/06 ,  H01L29/20

    CPC classification number: H01L29/7787 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/66462

    Abstract: Provided are a high electron mobility transistor (HEMT) and a method of manufacturing the HEMT. The HEMT includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2DEG) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2DEG; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode.

    Abstract translation: 提供高电子迁移率晶体管（HEMT）和制造HEMT的方法。 HEMT包括：包含第一半导体材料的沟道层; 沟道供应层，包括第二半导体材料并在沟道层中产生二维电子气（2DEG）; 在所述沟道供给层中彼此分离的源电极和漏电极; 至少一个耗尽形成单元，其形成在所述沟道供应层上并在所述2DEG中形成耗尽区; 至少一个栅电极，形成在所述至少一个耗尽形成单元上; 连接所述至少一个耗尽形成单元和所述源电极的至少一个桥; 以及从所述源电极下方的所述至少一个桥延伸的接触部。

    High electron mobility transistor and method of manufacturing the same
    9.
    发明授权
    High electron mobility transistor and method of manufacturing the same 有权
    高电子迁移率晶体管及其制造方法

    公开(公告)号：US08860089B2

    公开(公告)日：2014-10-14

    申请号：US13754047

    申请日：2013-01-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ki-yeol Park ,  Woo-chul Jeon ,  Young-hwan Park ,  Jai-kwang Shin ,  Jong-bong Ha ,  Sun-kyu Hwang

    IPC: H01L29/778 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/20

    CPC classification number: H01L29/778 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

    Abstract: According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer.

    Abstract translation: 根据示例实施例，较高电子迁移率晶体管（HEMT）可以包括第一沟道层，第一沟道层上的第二沟道层，第二沟道层上的沟道电源，与第一沟道层间隔开的漏极， 与第一沟道层接触并与第二沟道层和沟道供给层中的至少一个接触的源电极以及源电极和漏电极之间的栅电极单元。 栅电极单元可以具有常关结构。 第一和第二沟道层彼此形成PN结。 漏电极接触第二沟道层和沟道供应层中的至少一个。

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