公开(公告)号：US10790133B2

公开(公告)日：2020-09-29

申请号：US15416408

申请日：2017-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keum Seok Park ,  Sun Jung Kim ,  Yi Hwan Kim ,  Pan Kwi Park ,  Dong Suk Shin ,  Hyun Kwan Yu ,  Seung Hun Lee

IPC: B08B7/00 ,  B08B7/04 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  H01L29/66 ,  H01J37/32 ,  H01L21/683 ,  H01L29/78 ,  H01L29/165

Abstract: A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.

公开(公告)号：US20180355510A1

公开(公告)日：2018-12-13

申请号：US15869905

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keum Seok Park ,  Gyeom Kim ,  Yi Hwan Kim ,  Sun Jung Kim ,  Pan Kwi Park ,  Jeong Ho Yoo

IPC: C30B25/12 ,  C23C16/458

CPC classification number: C30B25/12 ,  C23C16/4585 ,  H01L29/0847 ,  H01L29/66795

Abstract: A semiconductor process chamber includes a susceptor, a base plate surrounding the susceptor, a liner on an inner sidewall of the base plate, and a preheat ring between the susceptor and the base plate and coplanar with the susceptor. The process chamber further includes an upper dome coupled to the base plate and covering an upper surface of the susceptor. The upper dome includes a first section on an upper surface of the base plate and a second section extending from the first section and overlapping the susceptor. The first section includes a first region on the upper surface of the base plate, a second region extending from the first region past the base plate, and a third region extending from the second region with a decreasing thickness to contact the second section.

公开(公告)号：US11821106B2

公开(公告)日：2023-11-21

申请号：US15869905

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keum Seok Park ,  Gyeom Kim ,  Yi Hwan Kim ,  Sun Jung Kim ,  Pan Kwi Park ,  Jeong Ho Yoo

IPC: C30B25/12 ,  C23C16/458 ,  H01L29/66 ,  H01L29/08

CPC classification number: C30B25/12 ,  C23C16/4585 ,  H01L29/0847 ,  H01L29/66636 ,  H01L29/66795

Abstract: A semiconductor process chamber includes a susceptor, a base plate surrounding the susceptor, a liner on an inner sidewall of the base plate, and a preheat ring between the susceptor and the base plate and coplanar with the susceptor. The process chamber further includes an upper dome coupled to the base plate and covering an upper surface of the susceptor. The upper dome includes a first section on an upper surface of the base plate and a second section extending from the first section and overlapping the susceptor. The first section includes a first region on the upper surface of the base plate, a second region extending from the first region past the base plate, and a third region extending from the second region with a decreasing thickness to contact the second section.

公开(公告)号：US20180025901A1

公开(公告)日：2018-01-25

申请号：US15416408

申请日：2017-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keum Seok Park ,  Sun Jung Kim ,  Yi Hwan Kim ,  Pan Kwi Park ,  Dong Suk Shin ,  Hyun Kwan Yu ,  Seung Hun Lee

IPC: H01L21/02 ,  B08B7/04 ,  H01L29/66 ,  B08B7/00 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/02057 ,  B08B7/0035 ,  B08B7/04 ,  H01J37/32091 ,  H01J37/32889 ,  H01J2237/335 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/67034 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/6831 ,  H01L21/68707 ,  H01L21/68742 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/7848

Abstract: A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.