公开(公告)号：US20240355666A1

公开(公告)日：2024-10-24

申请号：US18636612

申请日：2024-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Il Choi ,  Seong-Eun Kang ,  Kyung Beom Kim ,  Sung Yoon Ryu ,  Mi Ra Park ,  Yong Kyu Lee ,  Jeung Hee Lee ,  Ju Hyun Lee ,  Nam Young Cho

IPC: H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6838 ,  H01L21/68707

Abstract: A substrate transferring apparatus includes a support plate including an upper surface on which a substrate is configured to be seated, and a vacuum pad detachably coupled to the support plate and configured to vacuum suction the substrate to fix the substrate on the upper surface of the support plate, wherein the vacuum pad includes a suction area and a support protrusion surrounding the suction area, an upper surface of the support protrusion is at a higher vertical level than an upper surface of the suction area to support the substrate, and the upper surface of the support protrusion is inclined relative to horizontal.

公开(公告)号：US20230170028A1

公开(公告)日：2023-06-01

申请号：US17814270

申请日：2022-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Ik Park ,  Jae Hun Lee ,  Chang Min Jeon ,  Yong Kyu Lee

IPC: G11C16/26 ,  G11C16/10 ,  G11C16/14 ,  H01L27/11526 ,  H01L27/11573

CPC classification number: G11C16/26 ,  G11C16/10 ,  G11C16/14 ,  H01L27/11526 ,  H01L27/11573

Abstract: A non-volatile memory device includes a memory cell which stores one of first data and second data, and includes a first sub-memory cell connected to a first word line and a first bit line, and a second sub-memory cell connected to a second word line and a second bit line, a source line shared by the first sub-memory cell and the second sub-memory cell, and a sense amplifier connected to the first bit line and the second bit line which reads data stored in the memory cell. The sense amplifier receives a first current from the first bit line, receives a second current from the second bit line, and reads data stored in the memory cell by comparing magnitudes of the first current and the second current. The first sub-memory cell is programmed, and the second sub-memory cell is erased, in response to the memory cell storing the first data.

公开(公告)号：US12144169B2

公开(公告)日：2024-11-12

申请号：US17695341

申请日：2022-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Sung Woo ,  Yong Kyu Lee

IPC: H10B41/35 ,  H01L29/423 ,  H01L29/66 ,  H10B41/10 ,  H10B41/41

Abstract: Provided is a semiconductor device. The semiconductor device includes a floating gate disposed on a substrate; a memory gate disposed on the floating gate; a first spacer disposed sidewalls of the floating gate and the memory gate, and an upper surface of the substrate; a second spacer disposed on the first spacer; a select high-k film disposed on a first portion of a sidewall of the first spacer between the substrate and the second spacer; and a select gate disposed on a second portion of the sidewall of the first spacer between the substrate and the second spacer. A width of a portion of the first spacer is reduced as a distance to the substrate decreases, and the portion of the first spacer is disposed between the substrate and the second spacer.