公开(公告)号：US20240196599A1

公开(公告)日：2024-06-13

申请号：US18512135

申请日：2023-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaekang KOH ,  Byeongguk KO ,  Chanyoung KIM ,  Sangkoo NAM ,  Yongsoon CHOI

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/315

Abstract: A semiconductor device includes: an active pattern disposed on a substrate; a gate structure disposed on the active pattern; a bit line structure disposed on the active pattern, and including a first conductive pattern, a second conductive pattern and an insulation structure stacked on each other, a lower spacer structure disposed on a sidewall of the bit line structure; an upper spacer structure disposed on the lower spacer structure, wherein the upper spacer structure is disposed on an upper portion of the sidewall of the bit line structure; a contact plug structure disposed on the active pattern, wherein the contact plug structure is spaced apart from the bit line structure; and a capacitor disposed on the contact plug structure, wherein the lower spacer structure includes: a first spacer partially covering a sidewall of the first conductive pattern, and including air; and a second spacer disposed on the first spacer.

公开(公告)号：US20160362785A1

公开(公告)日：2016-12-15

申请号：US15048995

申请日：2016-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongyoung KIM ,  Yongsoon CHOI ,  Honggun KIM ,  Jongmyeong LEE ,  Byoungdeog CHOI

IPC: C23C16/455 ,  C23C16/30

CPC classification number: C23C16/45512 ,  C23C16/30 ,  C23C16/45561 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

Abstract: An apparatus for manufacturing semiconductor devices having a gas mixer includes a gas supply and a reaction chamber, and the gas supply includes an upper gas mixer, an intermediate gas mixer disposed under the upper gas mixer, a lower gas mixer disposed under the intermediate gas mixer, a first gas supply pipe which is disposed on an upper portion of the upper gas mixer and supplies a first gas to the upper gas mixer, a second gas supply pipe which is disposed on an upper end portion of a side surface of the upper gas mixer and supplies a second gas to the upper gas mixer, and a third gas supply pipe which is disposed on a side surface of the intermediate gas mixer and supplies a third gas to the intermediate gas mixer.

Abstract translation: 一种用于制造具有气体混合器的半导体器件的装置包括气体供应和反应室，并且气体供应包括上部气体混合器，设置在上部气体混合器下方的中间气体混合器，设置在中间气体混合器下方的下部气体混合器 第一气体供给管，其设置在上部气体混合器的上部，并向第一气体混合器供给第一气体;第二气体供给管，其设置在上部气体的侧面的上端部; 混合器并将第二气体供应到上部气体混合器，以及第三气体供应管，其设置在中间混合气体的侧表面上并将第三气体供应到中间气体混合器。