公开(公告)号：US20200168621A1

公开(公告)日：2020-05-28

申请号：US16777999

申请日：2020-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Jin JUNG

IPC: H01L27/11556 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11573 ,  G11C8/10 ,  G11C16/08 ,  H01L29/423 ,  H01L27/11524

Abstract: A three-dimensional semiconductor device is provided including a gate electrode disposed on a substrate and having a pad region, a cell vertical structure passing through the gate electrode, a dummy vertical structure passing through the pad region, and a gate contact plug disposed on the pad region. The cell vertical structure includes a cell pad layer disposed on a level higher than that of the gate electrode and a cell channel layer opposing the gate electrode, the dummy vertical structure includes a buffer region formed of a material different from that of the cell pad layer and a dummy channel layer formed of a material the same as that of the cell channel layer, and at least a portion of the buffer region is located on the same plane as at least a portion of the cell pad layer.

公开(公告)号：US20190139985A1

公开(公告)日：2019-05-09

申请号：US16015702

申请日：2018-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Soo KIM ,  Young Jin JUNG ,  Jae Duk LEE

IPC: H01L27/11597 ,  H01L29/423 ,  H01L27/02 ,  H01L29/10 ,  H01L27/1159

CPC classification number: H01L27/11597 ,  H01L21/0337 ,  H01L21/31144 ,  H01L27/0207 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11548 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/1156 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/1159 ,  H01L27/11595 ,  H01L29/1037 ,  H01L29/4234 ,  H01L29/66545 ,  H01L29/66833 ,  H01L29/7926

Abstract: A three-dimensional semiconductor device is provided including main separation structures disposed on a substrate, and extending in a first direction, parallel to a surface of the substrate; gate electrodes disposed between the main separation structures; a first secondary separation structure penetrating through the gate electrodes, between the main separation structures, and including a first linear portion and a second linear portion, having end portions opposing each other; and second secondary separation structures disposed between the first secondary separation structure and the main separation structures, and penetrating through the gate electrodes. The second secondary separation structures have end portions opposing each other between the second linear portion and the main separation structures.