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    Host controller, secure element and serial peripheral interface communications system
    1.
    发明授权
    Host controller, secure element and serial peripheral interface communications system 有权

    公开(公告)号：US10289601B1

    公开(公告)日：2019-05-14

    申请号：US16018334

    申请日：2018-06-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young-seok Kim ,  Seok-Hyun Kim ,  Tae Seon Kim ,  Min-Woo Lee

    IPC: G06F13/42 ,  G06F13/364 ,  H04L7/00 ,  H04L12/403

    Abstract: A host controller, a secure element, and a serial peripheral interface communications system are provided. The host controller is configured to connect to a secure element via a serial peripheral interface and includes: a resume signal generator configured to generate a first resume signal indicating a start of communication with the secure element; a transmitter configured to transmit the first resume signal to the secure element; a slave select line activator configured to activate a slave select line after the first resume signal is transmitted; and a clock controller configured to transmit a first clock signal to the secure element over a clock line based on the slave select line being activated, and the transmitter is further configured to transmit a first signal containing first data to the secure element over a master-out slave-in line (an MOSI line) while the first clock signal is being transmitted.

    Semiconductor devices having metal silicide layers and methods of manufacturing such semiconductor devices
    3.
    发明授权
    Semiconductor devices having metal silicide layers and methods of manufacturing such semiconductor devices 有权
    具有金属硅化物层的半导体器件和制造这种半导体器件的方法

    公开(公告)号：US09041122B2

    公开(公告)日：2015-05-26

    申请号：US14267008

    申请日：2014-05-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Won-seok Yoo ,  Young-seok Kim ,  Han-jin Lim ,  Jeon-Il Lee

    IPC: H01L29/417 ,  H01L29/45 ,  H01L21/764 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528

    CPC classification number: H01L23/5225 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76879 ,  H01L21/76892 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. In order to improve reliability by solving a problem of conductivity that may occur when an air spacer structure that may reduce a capacitor coupling phenomenon between a plurality of conductive lines is formed, there are provided a semiconductor device including: a substrate having an active region; a contact plug connected to the active region; a landing pad spacer formed to contact a top surface of the contact plug; a contact conductive layer formed to contact the top surface of the contact plug and formed in a space defined by the landing pad spacer; a metal silicide layer formed on the contact conductive layer; and a landing pad connected to the contact conductive layer in a state in which the metal silicide layer is disposed between the landing pad and the contact conductive layer, and a method of manufacturing the semiconductor device.

    Abstract translation: 提供半导体器件和制造半导体器件的方法。 为了通过解决当形成能够减少多个导线之间的电容耦合现象的空气间隔结构时可能发生的导电性问题，为了提高可靠性，提供了一种半导体器件，包括：具有有源区的基板; 连接到活动区域的接触插塞; 形成为接触所述接触插塞的顶表面的着陆垫间隔件; 接触导电层，其形成为接触所述接触插塞的顶表面并形成在由所述着陆垫间隔件限定的空间中; 形成在所述接触导电层上的金属硅化物层; 以及在金属硅化物层设置在着陆焊盘和接触导电层之间的状态下连接到接触导电层的着陆焊盘以及制造半导体器件的方法。

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