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公开(公告)号：US11126497B2
公开(公告)日：2021-09-21
申请号：US16358884
申请日：2019-03-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eun-chu Oh , Moo-sung Kim , Young-sik Kim , Yong-jun Lee , Jeong-ho Lee
Abstract: Provided is a bit error rate equalizing method of a memory device. The memory device selectively performs an error correction code (ECC) interleaving operation according to resistance distribution characteristics of memory cells, when writing a codeword including information data and a parity bit of the information data to a memory cell array. In the ECC interleaving operation according to one example, an ECC sector including information data is divided into a first ECC sub-sector and a second ECC sub-sector, the first ECC sub-sector is written to memory cells of a first memory area having a high bit error rate (BER), and the second ECC sub-sector is written to memory cells of a second memory area having a low BER.
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Patent Agency Ranking
公开(公告)号：US20220004455A1
公开(公告)日：2022-01-06
申请号：US17478597
申请日：2021-09-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eun-chu Oh , Moo-sung Kim , Young-sik Kim , Yong-jun Lee , Jeong-ho Lee
Abstract: Provided is a bit error rate equalizing method of a memory device. The memory device selectively performs an error correction code (ECC) interleaving operation according to resistance distribution characteristics of memory cells, when writing a codeword including information data and a parity bit of the information data to a memory cell array. In the ECC interleaving operation according to one example, an ECC sector including information data is divided into a first ECC sub-sector and a second ECC sub-sector, the first ECC sub-sector is written to memory cells of a first memory area having a high bit error rate (BER), and the second ECC sub-sector is written to memory cells of a second memory area having a low BER.
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公开(公告)号：US10990523B2
公开(公告)日：2021-04-27
申请号：US16445005
申请日：2019-06-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeong-ho Lee , Young-sik Kim , Eun-chu Oh , Young-kwang Yoo , Young-geun Lee
Abstract: A memory controller configured to control a memory device including a plurality of banks. The memory controller may determine whether a number of write commands enqueued in a command queue of the memory controller exceeds a reference value, calculate a level of write power to be consumed by the memory device in response to at least some of the write commands from among the enqueued write commands when the number of enqueued write commands exceeds the reference value, and schedule, based on the calculated level of write power, interleaving commands executing an interleaving operation of the memory device, from among the enqueued write commands.
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4.发明授权Method and photographing apparatus for controlling function based on gesture of user 有权基于用户手势控制功能的方法和拍摄装置公开(公告)号：US09554053B1
公开(公告)日：2017-01-24
申请号：US14941945
申请日：2015-11-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young-sik Kim , Gun-woo Nam
CPC classification number: H04N5/23293 , H04N5/23216 , H04N5/23245
Abstract: A photographing apparatus including a sensor, a touchscreen, and a controller is disclosed. The sensor is configured to detect that a user approaches or comes within a predetermined proximity the photographing apparatus. The touchscreen is configured to display an image representing a state of the photographing apparatus and receive a gesture of the user. The controller is configured to enable a function of the touchscreen to detect the gesture based on a signal received from the sensor, and execute a function corresponding to the gesture.
Abstract translation: 公开了一种包括传感器，触摸屏和控制器的摄影设备。 传感器被配置为检测用户接近或进入到拍摄设备的预定接近度内。 触摸屏被配置为显示表示拍摄设备的状态的图像并接收用户的手势。 控制器被配置为使得触摸屏的功能能够基于从传感器接收到的信号来检测手势，并且执行与该手势相对应的功能。
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公开(公告)号：US20130198253A1
公开(公告)日：2013-08-01
申请号：US13793824
申请日：2013-03-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young-sik Kim , Mi-Jung Noh , Kyoung-moon Ahn , Sun-soo Shin
IPC: G06F7/72
Abstract: Provided is a method of calculating a negative inverse of a modulus, wherein the negative inverse, which is an essential element in Montgomery multiplication, is quickly obtained. The method includes setting a modulus, defining P obtained by converting the modulus to a negative number, and defining S obtained by subtracting 1 from P, and calculating a negative inverse of the modulus by using P and S.
Abstract translation: 提供了一种计算模数的负逆的方法，其中快速获得作为蒙哥马利乘法中的基本要素的负逆。 该方法包括设定模量，通过将模数转换为负数来定义P，并定义通过从P中减去1获得的S，并且通过使用P和S计算模量的负逆。
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公开(公告)号：US12105585B2
公开(公告)日：2024-10-01
申请号：US17478597
申请日：2021-09-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eun-chu Oh , Moo-sung Kim , Young-sik Kim , Yong-jun Lee , Jeong-ho Lee
CPC classification number: G06F11/1044 , G06F11/076 , G06F11/1068 , G11C13/0004 , G11C13/0035 , G11C13/0069 , G11C29/52
Abstract: Provided is a bit error rate equalizing method of a memory device. The memory device selectively performs an error correction code (ECC) interleaving operation according to resistance distribution characteristics of memory cells, when writing a codeword including information data and a parity bit of the information data to a memory cell array. In the ECC interleaving operation according to one example, an ECC sector including information data is divided into a first ECC sub-sector and a second ECC sub-sector, the first ECC sub-sector is written to memory cells of a first memory area having a high bit error rate (BER), and the second ECC sub-sector is written to memory cells of a second memory area having a low BER.
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