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公开(公告)号：US11990503B2
公开(公告)日：2024-05-21
申请号：US17376458
申请日：2021-07-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gabjin Nam , Youngbin Lee , Cheoljin Cho , Jaehyoung Choi
Abstract: Provided is a method of fabricating a capacitor. The method of fabricating a capacitor may include forming a first electrode, forming a dielectric layer on the first electrode, forming a second electrode on the dielectric layer, and applying, between the first electrode and the second electrode, a voltage outside an operating voltage range applied during operation or a current outside an operating current range applied during operation.
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公开(公告)号：US10115759B2
公开(公告)日：2018-10-30
申请号：US15647664
申请日：2017-07-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngbin Lee , GukHyon Yon , Soojin Hong
IPC: H01L27/14 , H01L27/146
Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor includes a device isolation layer provided in a trench of a substrate, the device isolation layer defining a pixel; and a photoelectric conversion device provided in the pixel. The device isolation layer includes a conductive layer, a tunneling layer interposed between the conductive layer and the substrate, and a trap layer interposed between the tunneling layer and the conductive layer.
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Patent Agency Ranking
公开(公告)号：US11783880B2
公开(公告)日：2023-10-10
申请号：US17496003
申请日：2021-10-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-Hoon Jang , Kyungryun Kim , Young Ju Kim , Seung-Jun Lee , Youngbin Lee , Yeonkyu Choi
CPC classification number: G11C8/18 , G11C7/1045 , G11C7/1066 , G11C7/1093
Abstract: Disclosed is an operating method of a memory device communicating with a memory controller, which includes receiving a first command from the memory controller, the first command indicating initiation of synchronization of a data clock signal and defining a clock section corresponding to the synchronization, preparing a toggling of the data clock signal during a preparation time period, processing a first data stream based on the data clock signal toggling at a reference frequency, and processing a second data stream based on the data clock toggling at the reference frequency and extended for a period of the defined first clock section.
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4.发明授权公开(公告)号：US11688438B2
公开(公告)日：2023-06-27
申请号：US18071054
申请日：2022-11-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngbin Lee , Kiho Kim , Jinhoon Jang , Yeonkyu Choi
CPC classification number: G11C7/1063 , G11C7/109 , G11C7/1045 , G11C7/14
Abstract: Provided are an apparatus, a memory device, and a method for storing a plurality of parameter codes for an operation parameter. The memory device includes a mode register and a control logic circuit. To set a first operating condition and a second operating condition for one operation parameter, the mode register stores a first parameter code for the operation parameter and a second parameter code, which is expressed as an offset value from the first parameter code. The control logic circuit sets the first operating condition as a current operating condition of the memory device by using the first parameter code based on a first control code and sets the second operating condition as the current operating condition of the memory device by using the first parameter code and the second parameter code based on a second control code.
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公开(公告)号：US20240321690A1
公开(公告)日：2024-09-26
申请号：US18492946
申请日：2023-10-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngbin Lee , Man Chang
IPC: H01L23/48 , H01L21/768 , H01L23/522
CPC classification number: H01L23/481 , H01L21/76831 , H01L21/76832 , H01L21/76898 , H01L23/5226 , H01L27/088
Abstract: An integrated circuit device includes a substrate, an insulating structure on a frontside surface of the substrate, a contact structure including a first plug portion that extends through the substrate, and a self-assembled organic material insulating liner between the first plug portion and the substrate.
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公开(公告)号：US12040046B2
公开(公告)日：2024-07-16
申请号：US18447950
申请日：2023-08-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-Hoon Jang , Kyungryun Kim , Young Ju Kim , Seung-Jun Lee , Youngbin Lee , Yeonkyu Choi
CPC classification number: G11C8/18 , G11C7/1045 , G11C7/1066 , G11C7/1093
Abstract: Disclosed is an operating method of a memory device communicating with a memory controller, which includes receiving a first command from the memory controller, the first command indicating initiation of synchronization of a data clock signal and defining a clock section corresponding to the synchronization, preparing a toggling of the data clock signal during a preparation time period, processing a first data stream based on the data clock signal toggling at a reference frequency, and processing a second data stream based on the data clock toggling at the reference frequency and extended for a period of the defined first clock section.
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7.发明授权公开(公告)号：US11545196B2
公开(公告)日：2023-01-03
申请号：US17466754
申请日：2021-09-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngbin Lee , Kiho Kim , Jinhoon Jang , Yeonkyu Choi
Abstract: Provided are an apparatus, a memory device, and a method for storing a plurality of parameter codes for an operation parameter. The memory device includes a mode register and a control logic circuit. To set a first operating condition and a second operating condition for one operation parameter, the mode register stores a first parameter code for the operation parameter and a second parameter code, which is expressed as an offset value from the first parameter code. The control logic circuit sets the first operating condition as a current operating condition of the memory device by using the first parameter code based on a first control code and sets the second operating condition as the current operating condition of the memory device by using the first parameter code and the second parameter code based on a second control code.
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