公开(公告)号：US09029244B2

公开(公告)日：2015-05-12

申请号：US13624609

申请日：2012-09-21

Applicant: Samsung Electronics Co., Ltd. ,  Genitech, Inc.

Inventor： Seok-jun Won ,  Yong-min Yoo ,  Dae-youn Kim ,  Young-hoon Kim ,  Dae-jin Kwon ,  Weon-hong Kim

IPC: H01L21/205 ,  C23C16/455 ,  H01L21/00 ,  H01L21/02

CPC classification number: C23C16/45544 ,  C23C16/0272 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4402 ,  C23C16/45561 ,  C23C16/45574 ,  H01L21/00 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/28562 ,  Y10T137/0318

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Abstract translation: 提供了一种通过改善气阀系统来防止发生死体积而制造使用具有改善吹扫效率的四通阀的半导体器件的装置和方法。 该装置包括反应室，处理基板以制造半导体器件; 第一处理气体供给管，其将第一处理气体供给到所述反应室中; 四通阀，具有第一入口，第二入口，第一出口和第二出口，并安装在第一处理气体供应管上，使得第一入口和第一出口连接到第一处理气体供应管; 连接到所述四通阀的第二入口的第二处理气体供给管，以供应第二处理气体; 连接到四通阀的第二出口的旁路; 和安装在旁路上的闸阀。

公开(公告)号：US09406502B2

公开(公告)日：2016-08-02

申请号：US14685697

申请日：2015-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  GENITECH, INC.

Inventor： Seok-jun Won ,  Yong-min Yoo ,  Dae-youn Kim ,  Young-hoon Kim ,  Dae-jin Kwon ,  Weon-hong Kim

IPC: H01L21/20 ,  H01L21/02 ,  H01L21/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/02 ,  H01L21/285

CPC classification number: C23C16/45544 ,  C23C16/0272 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4402 ,  C23C16/45561 ,  C23C16/45574 ,  H01L21/00 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/28562 ,  Y10T137/0318

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

公开(公告)号：US09702041B2

公开(公告)日：2017-07-11

申请号：US15176684

申请日：2016-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  GENITECH, INC.

Inventor： Seok-jun Won ,  Yong-min Yoo ,  Dae-youn Kim ,  Young-hoon Kim ,  Dae-jin Kwon ,  Weon-hong Kim

IPC: H01L21/469 ,  C23C16/455 ,  H01L21/00 ,  C23C16/40 ,  H01L21/02 ,  C23C16/44 ,  C23C16/02 ,  H01L21/285

CPC classification number: C23C16/45544 ,  C23C16/0272 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4402 ,  C23C16/45561 ,  C23C16/45574 ,  H01L21/00 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/28562 ,  Y10T137/0318

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.