公开(公告)号：US20220301628A1

公开(公告)日：2022-09-22

申请号：US17834024

申请日：2022-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo SHIM ,  Ji-ho CHO ,  Yong-seok KIM ,  Byoung-taek KIM ,  Sun-gyung HWANG

IPC: G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/04 ,  G11C16/08 ,  G11C11/56

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US20250014646A1

公开(公告)日：2025-01-09

申请号：US18892390

申请日：2024-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo SHIM ,  Ji-ho CHO ,  Yong-seok KIM ,  Byoung-taek KIM ,  Sun-gyung HWANG

IPC: G11C16/10 ,  G06F3/06 ,  G11C11/56 ,  G11C16/04 ,  G11C16/08 ,  G11C16/34 ,  H01L29/788 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US20190392902A1

公开(公告)日：2019-12-26

申请号：US16553891

申请日：2019-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo SHIM ,  Ji-ho CHO ,  Yong-seok KIM ,  Byoung-taek KIM ,  Sun-gyung HWANG

IPC: G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/04 ,  G11C16/08

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US20210217477A1

公开(公告)日：2021-07-15

申请号：US17220107

申请日：2021-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo SHIM ,  Ji-ho CHO ,  Yong-seok KIM ,  Byoung-taek KIM ,  Sun-gyung HWANG

IPC: G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/04 ,  G11C16/08 ,  G11C11/56

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US20200119045A1

公开(公告)日：2020-04-16

申请号：US16707616

申请日：2019-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-wan NAM ,  Won-bo SHIM ,  Ji-ho CHO

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L29/10 ,  H01L27/1157 ,  H01L23/528 ,  G11C16/26 ,  G11C16/14 ,  G11C16/10 ,  G11C16/08 ,  G11C16/04

Abstract: A three-dimensional (3D) memory device having a plurality of vertical channel structures includes a first memory block, a second memory block, and a bit line. The first memory block includes first vertical channel structures extending in a vertical direction with respect to a surface of a substrate. The second memory block includes second vertical channel structures on the first vertical channel structures in the vertical direction and first and second string selection lines extending in a first horizontal direction and offset in the vertical direction. The bit line extends in the first horizontal direction between the first and second memory blocks and is shared by the first and second memory blocks. The second memory block may include first and second string selection transistors which are each connected to the bit line and the first string selection line and have different threshold voltages from each other.

公开(公告)号：US20190304994A1

公开(公告)日：2019-10-03

申请号：US16182047

申请日：2018-11-06

Applicant: Samsung Electronics Co.,Ltd.

Inventor： Sang-wan NAM ,  Won-bo SHIM ,  Ji-ho CHO

IPC: H01L27/11582 ,  H01L29/10 ,  G11C16/04 ,  H01L27/1157 ,  H01L23/528 ,  G11C16/14 ,  G11C16/10 ,  G11C16/26 ,  G11C16/08

Abstract: A three-dimensional (3D) memory device having a plurality of vertical channel structures includes a first memory block, a second memory block, and a bit line. The first memory block includes first vertical channel structures extending in a vertical direction with respect to a surface of a substrate. The second memory block includes second vertical channel structures on the first vertical channel structures in the vertical direction and first and second string selection lines extending in a first horizontal direction and offset in the vertical direction. The bit line extends in the first horizontal direction between the first and second memory blocks and is shared by the first and second memory blocks. The second memory block may include first and second string selection transistors which are each connected to the bit line and the first string selection line and have different threshold voltages from each other.

公开(公告)号：US20180268907A1

公开(公告)日：2018-09-20

申请号：US15870989

申请日：2018-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo SHIM ,  Ji-ho CHO ,  Yong-seok KIM ,  Byoung-taek KIM ,  Sun-gyung HWANG

IPC: G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/04 ,  G11C16/08

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US20170200506A1

公开(公告)日：2017-07-13

申请号：US15393465

申请日：2016-12-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-bo SHIM

IPC: G11C16/34 ,  G11C29/52 ,  G11C16/26 ,  G06F11/10 ,  G11C16/14 ,  G11C16/04

CPC classification number: G11C16/3445 ,  G06F11/1068 ,  G11C7/1006 ,  G11C16/0483 ,  G11C16/14 ,  G11C16/26 ,  G11C29/021 ,  G11C29/025 ,  G11C29/028 ,  G11C29/50004 ,  G11C29/52 ,  G11C2029/0409

Abstract: A method for operating a non-volatile memory device initially includes supplying an erase voltage to the memory cells. The memory cells are in cell strings in a three-dimensional structure. The method further includes performing a first read operation of the memory cells, performing a second read operation of the memory cells, and then performing a first erase verify operation based on results of the first and second read operations. The first erase verify operation may include performing a first exclusive-or (XOR) operation on the first and second read operation results.