公开(公告)号：US10254835B2

公开(公告)日：2019-04-09

申请号：US14272616

申请日：2014-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Sang Yun ,  Young-Soo Park ,  Yang-Wook Kim ,  Hee-Sung Kim

IPC: G06F3/01 ,  G06F3/041 ,  G06F3/0354

Abstract: A method of operating a haptic-enabled electronic device includes detecting an input interaction between the haptic-enabled electronic device and a touchscreen-enabled electronic device selecting a vibration command in associated with the input, and vibrating the haptic-enabled electronic device in response to the vibration command.

公开(公告)号：US10741191B2

公开(公告)日：2020-08-11

申请号：US15778684

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yang-Su Kim ,  Jung-Ae Choi ,  Sang-Phil Hong ,  Young-Soo Park

IPC: G10L21/02 ,  G10L21/0208 ,  G06F1/3234 ,  G06F1/3212 ,  G10L25/78

Abstract: The present invention relates to a voice signal processing method according to a state of an electronic device, and an electronic device therefor. An electronic device according to various embodiments comprises: a microphone; and a processor, wherein the processor can be configured to: obtain a voice signal using the microphone, check a state of the electronic device, and generate a first voice signal by filtering the voice signal using a first method, at least based on a determination of the electronic device being in a first state; generate a second voice signal by filtering the voice signal using a second method, at least based on a determination of the electronic device being in a second state; and transmit to an external electronic device a corresponding voice signal of the first voice signal or the second voice signal. In addition, other embodiments are possible.

公开(公告)号：US10454853B2

公开(公告)日：2019-10-22

申请号：US14035059

申请日：2013-09-24

Applicant: Samsung Electronics Co. Ltd.

Inventor： Young-Soo Park ,  Hong-Seok Yang ,  Yang-Wook Kim

IPC: H04L12/58

Abstract: An electronic device and a method for sending a response message according to a current status are provided. An operating method of the electronic device includes determining whether a received message is confirmed within a preset time, when the received message is not confirmed within the preset time, determining whether a contact number of a sender electronic device is a preset contact number, and when the contact number of the sender electronic device is the preset contact number, sending an automatic response message to the sender electronic device corresponding to a preset automatic response message status.

公开(公告)号：US10094045B2

公开(公告)日：2018-10-09

申请号：US15472467

申请日：2017-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mi-Hyun Kim ,  Sam-Mook Kang ,  Jun-Youn Kim ,  Young-Jo Tak ,  Young-Soo Park

IPC: C30B25/02 ,  C30B25/18 ,  H01L21/02 ,  H01L21/78 ,  C30B25/10 ,  C30B29/40 ,  C30B29/06 ,  C30B25/16

Abstract: In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed.

公开(公告)号：US09583340B2

公开(公告)日：2017-02-28

申请号：US14532921

申请日：2014-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Youn Kim ,  Jae-Kyun Kim ,  Joo-Sung Kim ,  Young-Soo Park ,  Young-Jo Tak

IPC: C30B29/40 ,  H01L21/02 ,  C30B25/18 ,  H01L33/12 ,  H01L33/00

CPC classification number: H01L21/02458 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12

Abstract: Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7≦k≦13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.

Abstract translation: 提供一种半极性氮化物半导体结构及其制造方法。 所述半极性氮化物半导体结构包括具有满足7≤k≤13的Si（11k）表面的硅衬底; 以及形成在硅衬底上的氮化物半导体层。 氮化物半导体层具有偏极化场近似为0的半极性特性。