公开(公告)号：US10094045B2

公开(公告)日：2018-10-09

申请号：US15472467

申请日：2017-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mi-Hyun Kim ,  Sam-Mook Kang ,  Jun-Youn Kim ,  Young-Jo Tak ,  Young-Soo Park

IPC: C30B25/02 ,  C30B25/18 ,  H01L21/02 ,  H01L21/78 ,  C30B25/10 ,  C30B29/40 ,  C30B29/06 ,  C30B25/16

Abstract: In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed.

公开(公告)号：US09793432B2

公开(公告)日：2017-10-17

申请号：US14955981

申请日：2015-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Youn Kim ,  Bok-ki Min ,  Hyun-gi Hong ,  Jae-won Lee

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/12 ,  B82Y20/00

CPC classification number: H01L33/007 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46 ,  H01L2933/0025 ,  Y10S977/893 ,  Y10S977/95

Abstract: Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned distributed Bragg reflector (DBR) on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR and regions between patterns of the DBR.

公开(公告)号：US09583340B2

公开(公告)日：2017-02-28

申请号：US14532921

申请日：2014-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Youn Kim ,  Jae-Kyun Kim ,  Joo-Sung Kim ,  Young-Soo Park ,  Young-Jo Tak

IPC: C30B29/40 ,  H01L21/02 ,  C30B25/18 ,  H01L33/12 ,  H01L33/00

CPC classification number: H01L21/02458 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12

Abstract: Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7≦k≦13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.

Abstract translation: 提供一种半极性氮化物半导体结构及其制造方法。 所述半极性氮化物半导体结构包括具有满足7≤k≤13的Si（11k）表面的硅衬底; 以及形成在硅衬底上的氮化物半导体层。 氮化物半导体层具有偏极化场近似为0的半极性特性。