公开(公告)号：US20250093777A1

公开(公告)日：2025-03-20

申请号：US18890487

申请日：2024-09-19

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Byeonggyu HWANG ,  Changmo LIM ,  Jaeyeol BAEK ,  Soonhyung KWON ,  Hwayoung JIN ,  Soojeung KIM ,  Eunsu LEE ,  Seongjin KIM ,  Ahra CHO ,  Yoojeong CHOI ,  Sungwoo JUNG

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038

Abstract: Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. the resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, a structural unit represented by Chemical Formula 3, or a combination thereof and a solvent. The definitions of Chemical Formula 1 to Chemical Formula 3 are as described in the specification.

公开(公告)号：US20240019784A1

公开(公告)日：2024-01-18

申请号：US18321596

申请日：2023-05-22

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Ryunmin HEO ,  Jin-Hee BAE ,  Hyungrang MOON ,  Taeksoo KWAK ,  Gyeong Ryeong BAK ,  Chungheon LEE ,  Byeonggyu HWANG

IPC: G03F7/32 ,  G03F7/004

CPC classification number: G03F7/325 ,  G03F7/0042

Abstract: A metal-containing photoresist developer composition includes an organic solvent, and at least one additive selected from a phosphorous acid-based compound, a hypophosphorous acid-based compound, a sulfurous acid-based compound, and a hydroxamic acid-based compound, wherein the additive is included in an amount of about 0.0001 wt % to less than about 1.0 wt %. A method of forming patterns includes step of developing a metal-containing photoresist film using the metal-containing photoresist developer composition.

公开(公告)号：US20250068076A1

公开(公告)日：2025-02-27

申请号：US18776047

申请日：2024-07-17

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Seongjin KIM ,  Jaeyeol BAEK ,  Soonhyung KWON ,  Byeonggyu HWANG ,  Hwayoung JIN ,  Eunsu LEE ,  Ahra CHO ,  Yoojeong CHOI ,  Sungwoo JUNG

IPC: G03F7/11 ,  C08G73/06 ,  C09D179/04

Abstract: Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. The definitions of Chemical Formula 1 are as described in the specification.

公开(公告)号：US20240272556A1

公开(公告)日：2024-08-15

申请号：US18508171

申请日：2023-11-13

Applicant: SAMSUNG SDI CO., LTD.

Inventor： GyeongRyeong BAK ,  Hyungrang MOON ,  Ryunmin HEO ,  TaekSoo KWAK ,  Taegeun SEONG ,  ChungHeon LEE ,  Byeonggyu HWANG ,  Minsoo KIM

IPC: G03F7/32 ,  G03F7/16

CPC classification number: G03F7/32

Abstract: Disclosed are a metal-containing photoresist developer composition, and a method of forming patterns including a developing step utilizing the metal-containing photoresist developer composition. The metal-containing photoresist developer composition includes an organic solvent, an acid compound having 1.0≤pKa1≤4.8, and at least one alcohol-based compound selected from a diol compound derived from an acyclic hydrocarbon and a cyclic alcohol compound.

公开(公告)号：US20250130493A1

公开(公告)日：2025-04-24

申请号：US18918816

申请日：2024-10-17

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Eunsu LEE ,  Jaeyeol BAEK ,  Byeonggyu HWANG ,  Hwayoung JIN ,  Soojeung KIM ,  Seongjin KIM ,  Ahra CHO ,  Yoojeong CHOI ,  Sungwoo JUNG ,  Changmo LIM ,  Soonhyung KWON

IPC: G03F7/038 ,  C08F226/06 ,  G03F7/16

Abstract: Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, a structural unit represented by Chemical Formula 3, or a combination thereof, a compound represented by one or more selected from Chemical Formula 4 to Chemical Formula 6, and a solvent. The definitions of Chemical Formula 1 to Chemical Formula 6 are as described in the specification.

公开(公告)号：US20190189430A1

公开(公告)日：2019-06-20

申请号：US16163170

申请日：2018-10-17

Applicant: Samsung SDI Co., Ltd.

Inventor： Jin-Hee BAE ,  Taeksoo KWAK ,  Byeonggyu HWANG ,  Kunbae NOH ,  Jun SAKONG ,  Jinwoo SEO ,  Junyoung JANG

IPC: H01L21/02 ,  C01B21/068 ,  C09D183/16

Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)−(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).