公开(公告)号：US20240329537A1

公开(公告)日：2024-10-03

申请号：US18509184

申请日：2023-11-14

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Taegeun SEONG ,  Hyungrang MOON ,  Yoojeong CHOI ,  Wanhee LIM ,  Chungheon LEE ,  Daeseok SONG ,  Jun SAKONG

IPC: G03F7/32 ,  G03F7/004 ,  G03F7/16

CPC classification number: G03F7/32 ,  G03F7/0042 ,  G03F7/168

Abstract: A metal-containing photoresist developer composition, and a method of forming patterns including a step (e.g., an act or task) of developing using the same are provided. The metal-containing photoresist developer composition includes an organic solvent, an acid compound, and a conjugate base compound of the acid compound.

公开(公告)号：US20190189430A1

公开(公告)日：2019-06-20

申请号：US16163170

申请日：2018-10-17

Applicant: Samsung SDI Co., Ltd.

Inventor： Jin-Hee BAE ,  Taeksoo KWAK ,  Byeonggyu HWANG ,  Kunbae NOH ,  Jun SAKONG ,  Jinwoo SEO ,  Junyoung JANG

IPC: H01L21/02 ,  C01B21/068 ,  C09D183/16

Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)−(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).

公开(公告)号：US20250102907A1

公开(公告)日：2025-03-27

申请号：US18676313

申请日：2024-05-28

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Minyoung LEE ,  Jimin KIM ,  Wanhee LIM ,  Jun SAKONG ,  Minki CHON ,  Changsoo WOO ,  Seung-Wook SHIN

IPC: G03F7/004 ,  H01L21/027

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound; a vinyl group-containing acid compound; and a solvent, and a method of forming a pattern using the same.

公开(公告)号：US20200369915A1

公开(公告)日：2020-11-26

申请号：US16645343

申请日：2018-02-13

Applicant: Samsung SDI Co., Ltd.

Inventor： Kunbae NOH ,  Taeksoo KWAK ,  Junyoung JANG ,  Yoonyoung KOO ,  Yonggoog KIM ,  Jingyo KIM ,  Jin-Hee BAE ,  Jun SAKONG ,  Jinwoo SEO ,  Sooyeon SIM ,  Huichan YUN ,  Jiho LEE ,  Kwen-Woo HAN ,  Byeong Gyu HWANG

IPC: C09D183/16 ,  H01L21/306 ,  H01L21/02

Abstract: Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.