公开(公告)号：US20180163055A1

公开(公告)日：2018-06-14

申请号：US15656341

申请日：2017-07-21

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Sooyeon SIM ,  Jin-Hee BAE ,  TaekSoo KWAK ,  Yonggoog KIM ,  Jingyo KIM ,  Kunbae NOH ,  Huichan YUN ,  Jiho LEE ,  Byeong Gyu HWANG

IPC: C09D1/00 ,  C09D7/00 ,  C09D7/12 ,  C01B33/12 ,  H01L21/02

CPC classification number: C09D1/00 ,  C01B33/12 ,  C09D7/20 ,  C09D7/63 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/02318

Abstract: A composition for forming silica layer includes a silicon-containing polymer and a solvent, wherein a weight average molecular weight of the silicon-containing polymer ranges from about 2,000 to about 100,000 and a branching ratio (a) of the silicon-containing polymer calculated by Equation 1 ranges from about 0.25 to about 0.50. η=k·Ma  [Equation 1] In Equation 1, η is an intrinsic viscosity of a silicon-containing polymer, M is an absolute molecular weight of a silicon-containing polymer, a is a branching ratio, and k is an intrinsic constant.

公开(公告)号：US20170092488A1

公开(公告)日：2017-03-30

申请号：US15178378

申请日：2016-06-09

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Jiho LEE ,  Kunbae NOH ,  Huichan YUN ,  Jin-Hee BAE ,  Wanhee LIM

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02307 ,  H01L21/02337

Abstract: A method of manufacturing a silica layer includes: coating a pre-wetting liquid material including a carbon compound on a substrate; coating a composition for forming a silica layer on the substrate coated with the pre-wetting liquid material; and curing a substrate coated with the composition for forming a silica layer.

公开(公告)号：US20190189430A1

公开(公告)日：2019-06-20

申请号：US16163170

申请日：2018-10-17

Applicant: Samsung SDI Co., Ltd.

Inventor： Jin-Hee BAE ,  Taeksoo KWAK ,  Byeonggyu HWANG ,  Kunbae NOH ,  Jun SAKONG ,  Jinwoo SEO ,  Junyoung JANG

IPC: H01L21/02 ,  C01B21/068 ,  C09D183/16

Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)−(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).

公开(公告)号：US20210053832A1

公开(公告)日：2021-02-25

申请号：US16987981

申请日：2020-08-07

Applicant: Samsung SDI Co., Ltd.

Inventor： Jin-Hee BAE ,  Taeksoo KWAK ,  Myungho KANG ,  Seungwoo JANG ,  Kunbae NOH

IPC: C01B33/12 ,  C09D1/00 ,  C09D7/20 ,  C01B21/087 ,  H01L27/12

Abstract: Provided are a composition for forming a silica layer including a silicon-containing polymer and a solvent, wherein when adding 70 g of the composition for forming the silica layer to a 100 ml container, leaving it at 40° C. for 28 days, and taking 1 ml of gas generated from the composition, 1 ml of the gas includes hydrogen gas (H2), silane gas (SiH4), and ammonia gas (NH3), and the hydrogen gas, silane gas, and ammonia gas satisfy Equation 1: [(hydrogen gas amount (ppm))/(silane gas amount (ppm)+ammonia gas amount (ppm))≥1.5], a silica layer manufactured therefrom, and an electronic device including the silica layer.

公开(公告)号：US20200369915A1

公开(公告)日：2020-11-26

申请号：US16645343

申请日：2018-02-13

Applicant: Samsung SDI Co., Ltd.

Inventor： Kunbae NOH ,  Taeksoo KWAK ,  Junyoung JANG ,  Yoonyoung KOO ,  Yonggoog KIM ,  Jingyo KIM ,  Jin-Hee BAE ,  Jun SAKONG ,  Jinwoo SEO ,  Sooyeon SIM ,  Huichan YUN ,  Jiho LEE ,  Kwen-Woo HAN ,  Byeong Gyu HWANG

IPC: C09D183/16 ,  H01L21/306 ,  H01L21/02

Abstract: Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

公开(公告)号：US20180204730A1

公开(公告)日：2018-07-19

申请号：US15704054

申请日：2017-09-14

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Huichan YUN ,  TaekSoo KWAK ,  Jin-Hee BAE ,  Jinwoo SEO ,  Kunbae NOH ,  Junyoung JANG

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033

CPC classification number: H01L21/3086 ,  H01L21/02115 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method of forming patterns, patterns formed according to the method, and a semiconductor device including the patterns, the method including forming an etching subject layer on a substrate, forming a first layer on the etching subject layer such that the first layer has a projecting pattern, forming a second layer such that the second layer completely covers the projecting pattern of the first layer, partially removing the second layer such that a top of the projecting pattern is exposed and a patterned second layer remains at a side of the projecting pattern, removing the first layer such that a top of the etching subject layer is exposed, and etching the etching subject layer using the patterned second layer as an etching mask, wherein one of the first layer and the second layer is a carbon-containing layer and the other is a silicon-containing layer, and the silicon-containing layer is formed by coating a silicon-containing composition and heat-treating the same.