公开(公告)号：US20200369915A1

公开(公告)日：2020-11-26

申请号：US16645343

申请日：2018-02-13

Applicant: Samsung SDI Co., Ltd.

Inventor： Kunbae NOH ,  Taeksoo KWAK ,  Junyoung JANG ,  Yoonyoung KOO ,  Yonggoog KIM ,  Jingyo KIM ,  Jin-Hee BAE ,  Jun SAKONG ,  Jinwoo SEO ,  Sooyeon SIM ,  Huichan YUN ,  Jiho LEE ,  Kwen-Woo HAN ,  Byeong Gyu HWANG

IPC: C09D183/16 ,  H01L21/306 ,  H01L21/02

Abstract: Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

公开(公告)号：US20180224744A1

公开(公告)日：2018-08-09

申请号：US15866809

申请日：2018-01-10

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Shinhyo BAE ,  Soonhyung KWON ,  Hyeon PARK ,  Jaeyeol BAEK ,  Beomjun JOO ,  Yoojeong CHOI ,  Kwen-Woo HAN

IPC: G03F7/09 ,  H01L21/308 ,  C08G59/42 ,  G03F7/11 ,  G03F7/039 ,  C08G59/24

Abstract: A resist underlayer composition and a method of forming patterns using the resist underlayer composition, the resist underlayer composition including a polymer including a moiety represented by Chemical Formula 1 and a moiety represented by Chemical Formula 2, and a solvent,

公开(公告)号：US20190129307A1

公开(公告)日：2019-05-02

申请号：US16174524

申请日：2018-10-30

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Soonhyung KWON ,  Shinhyo BAE ,  Hyeon PARK ,  Jaeyeol BAEK ,  Beomjun JOO ,  Yoojeong CHOI ,  Kwen-Woo HAN

IPC: G03F7/11 ,  H01L21/027 ,  C08G12/34 ,  C09D161/30 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  H01L21/311

Abstract: A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2,

公开(公告)号：US20150337168A1

公开(公告)日：2015-11-26

申请号：US14561996

申请日：2014-12-05

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Jin-Hee BAE ,  Taek-Soo KWAK ,  Han-Song LEE ,  Youn-Jin CHO ,  Byeong-Gyu HWANG ,  Bo-Sun KIM ,  Sae-Mi PARK ,  Eun-Su PARK ,  Jin-Woo SEO ,  Wan-Hee LIM ,  Jun-Young JANG ,  Kwen-Woo HAN

IPC: C09D183/04 ,  B05D1/00 ,  B05D3/00 ,  C09D183/16

CPC classification number: C09D183/04 ,  C08G77/12 ,  C08G77/26 ,  C08G77/54 ,  C08G77/60 ,  C09D183/02 ,  C09D183/16 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1275 ,  C23C18/1283 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/02337 ,  H01L28/90

Abstract: A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 μm to about 1 μm is less than or equal to about 10/ml.

Abstract translation: 用于形成二氧化硅基层的组合物和二氧化硅基层的制造方法，该组合物包含含硅化合物，含有氢化聚硅氮烷部分的含硅化合物，氢化聚硅氧烷部分或其组合，以及 溶剂，其中所述组合物中的多个含硅化合物的颗粒的粒径为约0.2μm至约1μm，小于或等于约10 / ml。

公开(公告)号：US20150093545A1

公开(公告)日：2015-04-02

申请号：US14488440

申请日：2014-09-17

Applicant: Samsung SDI Co., Ltd.

Inventor： Kwen-Woo HAN ,  Taek-Soo KWAK ,  Bo-Sun KIM ,  Eun-Su PARK ,  Jin-Hee BAE ,  Jin-Woo SEO ,  Han-Song LEE ,  Wan-Hee LIM ,  Byeong-Gyu HWANG ,  Sang-Kyun KIM ,  Youn-Jin CHO

IPC: C09D183/16 ,  C01B33/12 ,  B05D3/02

CPC classification number: C09D183/16 ,  B05D3/0254 ,  B05D2518/10 ,  C01B33/126 ,  C08G77/54 ,  C08G77/62 ,  C09D183/14 ,  Y10T428/24479

Abstract: A composition for a silica based layer, a silica based layer, and a method of manufacturing a silica based layer, the composition including a solvent; and a silicon-containing polymer, the silicon-containing polymer having a weight average molecular weight of about 20,000 to about 160,000.

Abstract translation: 一种二氧化硅基层组合物，二氧化硅基层和二氧化硅基层的制造方法，该组合物含有溶剂; 和含硅聚合物，所述含硅聚合物的重均分子量为约20,000至约160,000。