公开(公告)号：US12057161B2

公开(公告)日：2024-08-06

申请号：US17847698

申请日：2022-06-23

Applicant: SanDisk Technologies LLC

Inventor： Wei Zhao ,  Dong-II Moon ,  Erika Penzo ,  Henry Chin

IPC: G11C16/04 ,  G11C11/56 ,  G11C16/10 ,  G11C16/26

CPC classification number: G11C11/5642 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/26

Abstract: The memory device includes a plurality of memory blocks that can individually operate in either a multi-bit per memory cell mode or a single-bit per memory cell mode. Certain voltage parameters during programming and reading are shared between these two operating modes, and certain voltage parameters are unique to each operating mode. One unique voltage parameter is a pass voltage VREADK that is applied to word lines adjacent a selected word line being read. Another unique voltage parameter is a VSGD voltage that is applied to a select gate drain transistor during programming. Yet another unique voltage parameter is an inhibit voltage that is applied to a bit line coupled with a memory cell being inhibited from programming while other memory cells are programmed.

公开(公告)号：US20230420042A1

公开(公告)日：2023-12-28

申请号：US17847698

申请日：2022-06-23

Applicant: SanDisk Technologies LLC

Inventor： Wei Zhao ,  Dong-II Moon ,  Erika Penzo ,  Henry Chin

IPC: G11C11/56 ,  G11C16/10 ,  G11C16/26

CPC classification number: G11C11/5642 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/26

Abstract: The memory device includes a plurality of memory blocks that can individually operate in either a multi-bit per memory cell mode or a single-bit per memory cell mode. Certain voltage parameters during programming and reading are shared between these two operating modes, and certain voltage parameters are unique to each operating mode. One unique voltage parameter is a pass voltage VREADK that is applied to word lines adjacent a selected word line being read. Another unique voltage parameter is a VSGD voltage that is applied to a select gate drain transistor during programming. Yet another unique voltage parameter is an inhibit voltage that is applied to a bit line coupled with a memory cell being inhibited from programming while other memory cells are programmed.