摘要:
An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.
摘要:
An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.
摘要:
In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.
摘要:
In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.
摘要:
An imprint lithography method is disclosed for forming a patterned layer from an imprintable liquid medium on a substrate by means of an imprint template having a patterned surface. The method involves contacting the patterned surface and imprintable liquid medium together for a filling period. Light emergent (e.g., scattered or reflected) from an interface between the medium and the patterned surface is collected and measured during the filling period to obtain data concerning one or more voids at the interface, and an estimated end time for the filling period is derived from a relationship between the data and time. The method may allow subsequent process steps to be undertaken more rapidly, with reduced risk of defects arising from remnants of unfilled voids. An imprint lithography apparatus and component for putting the method into effect are also disclosed.
摘要:
An imprint lithography method is disclosed for forming a patterned layer from an imprintable liquid medium on a substrate by means of an imprint template having a patterned surface. The method involves contacting the patterned surface and imprintable liquid medium together for a filling period. Light emergent (e.g., scattered or reflected) from an interface between the medium and the patterned surface is collected and measured during the filling period to obtain data concerning one or more voids at the interface, and an estimated end time for the filling period is derived from a relationship between the data and time. The method may allow subsequent process steps to be undertaken more rapidly, with reduced risk of defects arising from remnants of unfilled voids. An imprint lithography apparatus and component for putting the method into effect are also disclosed.
摘要:
An imprint lithography method is disclosed for reducing a difference between an intended topography and an actual topography arising from a part of a patterned layer of fixed imprintable medium. The method involves imprinting an imprint lithography template into a layer of flowable imprintable medium to form a patterned layer in the imprintable medium, and fixing the imprintable medium to form a patterned layer of fixed imprintable medium. Local excitation is applied to the part of the patterned layer to adjust a chemical reaction in the part of the patterned layer to reduce the difference between the intended topography and the actual topography arising from the part of the fixed patterned layer of imprintable medium when this is subsequently used as a resist for patterning the substrate. An imprint medium suitable for imprint lithography with the method is also disclosed.
摘要:
Treatment of a layer comprising self-assemblable polymer at a surface of a substrate is disclosed. In an embodiment, the treatment includes arranging a zone of temperature change to sweep across the layer, wherein a temperature of the layer within the zone differs from an initial temperature of the layer prior to passage of the zone.
摘要:
An imprint lithography method is disclosed for reducing a difference between an intended topography and an actual topography arising from a part of a patterned layer of fixed imprintable medium. The method involves imprinting an imprint lithography template into a layer of flowable imprintable medium to form a patterned layer in the imprintable medium, and fixing the imprintable medium to form a patterned layer of fixed imprintable medium. Local excitation is applied to the part of the patterned layer to adjust a chemical reaction in the part of the patterned layer to reduce the difference between the intended topography and the actual topography arising from the part of the fixed patterned layer of imprintable medium when this is subsequently used as a resist for patterning the substrate. An imprint medium suitable for imprint lithography with the method is also disclosed.
摘要:
Treatment of a layer comprising self-assemblable polymer at a surface of a substrate is disclosed. In an embodiment, the treatment includes arranging a zone of temperature change to sweep across the layer, wherein a temperature of the layer within the zone differs from an initial temperature of the layer prior to passage of the zone.