公开(公告)号：US09590284B1

公开(公告)日：2017-03-07

申请号：US14721890

申请日：2015-05-26

Applicant: Sandia Corporation

Inventor： Christopher Nordquist ,  Sean Michael Scott ,  Joyce Olsen Custer ,  Darin Leonhardt ,  Tyler Scott Jordan ,  Christopher T. Rodenbeck ,  Paul G. Clem ,  Jeff Hunker ,  Steven L. Wolfley

IPC: H01P1/203 ,  H03G11/04 ,  H01P1/201

CPC classification number: H01P1/203 ,  H01P1/2013 ,  H01P1/20363 ,  H03G11/04

Abstract: The present invention related to self-limiting filters, arrays of such filters, and methods thereof. In particular embodiments, the filters include a metal transition film (e.g., a VO2 film) capable of undergoing a phase transition that modifies the film's resistivity. Arrays of such filters could allow for band-selective interferer rejection, while permitting transmission of non-interferer signals.

Abstract translation: 本发明涉及自限制滤波器，这种滤波器的阵列及其方法。 在具体实施方案中，滤光器包括能够经历改变膜电阻率的相变的金属过渡膜（例如，VO2膜）。 这种滤波器的阵列可以允许频带选择性干扰源抑制，同时允许非干扰信号的传输。

公开(公告)号：US20170302054A1

公开(公告)日：2017-10-19

申请号：US14575430

申请日：2014-12-18

Applicant: Sandia Corporation

Inventor： Michael Wanke ,  Christopher Nordquist ,  Mark Lee

IPC: H01S5/026 ,  H01S5/40 ,  H01S5/20 ,  H01S5/06 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01S5/0261 ,  H01L29/20 ,  H01L29/872 ,  H01L31/022408 ,  H01L31/0735 ,  H01L31/125 ,  H01S5/0604 ,  H01S5/2054 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/3401 ,  H01S5/343 ,  H01S5/4025 ,  H01S2301/17 ,  H01S2301/176

Abstract: A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.

公开(公告)号：US09276557B1

公开(公告)日：2016-03-01

申请号：US13932859

申请日：2013-07-01

Applicant: Sandia Corporation

Inventor： Christopher Nordquist ,  Roy H. Olsson ,  Sean Michael Scott ,  Kenneth Wojciechowski ,  Darren W. Branch

IPC: H03H9/38 ,  H03H15/00 ,  H03H9/54 ,  H03H9/42

CPC classification number: H03H9/6403 ,  H03H9/02228

Abstract: An acoustically coupled frequency selective radio frequency (RF) device is provided. The device includes a piezoelectric substrate overlain by a plurality of electrodes. The device further includes a pair of RF input terminals at least one of which is electrically connected to at least one of the electrodes, and a pair of output RF terminals, at least one of which is electrically connected to at least one other of the electrodes. At least one of the electrodes is electromechanically reconfigurable between a state in which it is closer to a face of the piezoelectric substrate and at least one state in which it is farther from the face of the piezoelectric substrate.

Abstract translation: 提供声耦合频率选择射频（RF）装置。 该器件包括由多个电极覆盖的压电基片。 该装置还包括一对RF输入端子，其至少一个电连接到至少一个电极，以及一对输出RF端子，其至少一个电连接到电极中的至少一个电极 。 电极中的至少一个在其更靠近压电基板的表面的状态和离压电基板的表面更远的至少一个状态下是机电可重构的。