摘要:
The method of manufacturing a high-voltage electrical insulator (1), comprising at least one metal insulator element (4, 6) cemented to a dielectric insulator element (2) by means of a cement mortar (5), comprises at least one of the following steps: preparing the cement mortar (5) from aluminous cement and sand that are mixed with at least water; assembling the dielectric element (2) with the metal element (4, 6), the mortar (5) being placed between the dielectric insulator element (2) and the metal element (4, 6); and vibrating the dielectric element (2) and the metal element (4, 6) as assembled together, so as to distribute the mortar (5) between the dielectric element and the metal element (2, 4, 6). In order to prepare the mortar (5), an active ingredient of the polymer superplasticizer type based on polyglycol methacrylic acid ester is added, and the vibrating is performed for a duration lying in the range 2 seconds to 20 seconds, and preferably in the range 4 seconds to 15 seconds.
摘要:
A method of manufacturing a high-voltage electrical insulator (1), having at least one metal insulator element (4, 6) cemented to a dielectric insulator element (2) by a cement mortar (5), includes at least one of the following steps: preparing the cement mortar (5) from aluminous cement and sand that are mixed with at least water; assembling the dielectric element (2) with the metal element (4, 6), the mortar (5) being placed between the dielectric insulator element (2) and the metal element (4, 6); and vibrating the dielectric element (2) and the metal element (4, 6) as assembled together, so as to distribute the mortar (5) between the dielectric element and the metal element (2, 4, 6). In order to prepare the mortar (5), an active ingredient of the polymer superplasticizer type based on polyglycol methacrylic acid ester is added, and the vibrating is performed for a duration lying in the range 2 seconds to 20 seconds, and preferably in the range 4 seconds to 15 seconds.
摘要:
The disclosure relates to a device for controlling magnetization reversal in a controlled ferromagnetic system such as a magnetic memory element, without using an external magnetic field, wherein it comprises between two flat electrodes a magnetic control part comprising, starting from the first electrode, a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer, and the second of said two flat electrodes, the thickness of said second ferromagnetic layer being less than that of said first layer, and the thickness of said second electrode being sufficiently small to enable magnetic coupling between said second ferromagnetic layer and the system controlled by the control device.