公开(公告)号：US08953073B2

公开(公告)日：2015-02-10

申请号：US13618076

申请日：2012-09-14

申请人： Sang Chul Sul ,  Hirosige Goto ,  Kyung Ho Lee

发明人： Sang Chul Sul ,  Hirosige Goto ,  Kyung Ho Lee

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/359 ,  H01L27/30 ,  H04N5/3745

CPC分类号： H04N5/3745 ,  H01L27/307 ,  H04N5/3591 ,  H04N5/378

摘要： An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.

摘要翻译： 提供了图像传感器和图像感测方法。 图像传感器包括半导体衬底; 光电转换器包括偏置单元，其包括第一电极和第二电极，以及有机光电转换层，其选择性地吸收光并将光转换成电子; 与所述第二电极接触以将所述光电转换器与所述半导体衬底连接的通孔; 被配置为存储电子的存储节点; 读出单元，用于将从存储节点传送的电荷转换为图像信号; 包括多个像素的像素阵列，每个像素包括中间绝缘层; 以及输出电路，被配置为从像素阵列读出图像信号。 由有机光电转换层接收的光量由偏置单元的偏置变化来调节。

公开(公告)号：US09673258B2

公开(公告)日：2017-06-06

申请号：US14466395

申请日：2014-08-22

申请人： Kyo Jin Choo ,  Hirosige Goto ,  Kyu Sik Kim ,  Yun Kyung Kim ,  Kyung Bae Park ,  Jin Ho Seo ,  Sang Chul Sul ,  Kyung Ho Lee ,  Kwang-hee Lee

发明人： Kyo Jin Choo ,  Hirosige Goto ,  Kyu Sik Kim ,  Yun Kyung Kim ,  Kyung Bae Park ,  Jin Ho Seo ,  Sang Chul Sul ,  Kyung Ho Lee ,  Kwang-hee Lee

IPC分类号： H04N3/14 ,  H01L27/30 ,  H04N5/378 ,  H01L51/42 ,  H04N5/369 ,  H04N5/335 ,  H04N5/3745

CPC分类号： H01L27/307 ,  H01L51/424 ,  H04N5/3698 ,  H04N5/37452 ,  H04N5/378

摘要： Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.

公开(公告)号：US08836839B2

公开(公告)日：2014-09-16

申请号：US13650839

申请日：2012-10-12

申请人： Kyo Jin Choo ,  Hirosige Goto ,  Kyu Sik Kim ,  Yun Kyung Kim ,  Kyung Bae Park ,  Jin Ho Seo ,  Sang Chul Sul ,  Kyung Ho Lee ,  Kwang Hee Lee

发明人： Kyo Jin Choo ,  Hirosige Goto ,  Kyu Sik Kim ,  Yun Kyung Kim ,  Kyung Bae Park ,  Jin Ho Seo ,  Sang Chul Sul ,  Kyung Ho Lee ,  Kwang Hee Lee

IPC分类号： H04N5/335 ,  H01L27/30 ,  H01L31/062 ,  H04N5/3745 ,  H04N5/378

CPC分类号： H01L27/307 ,  H01L51/424 ,  H04N5/3698 ,  H04N5/37452 ,  H04N5/378

摘要： Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.

摘要翻译： 提供了一种有机像素，其包括具有像素电路的半导体衬底，具有第一接触的互连层和形成在半导体衬底上的第一电极以及形成在互连层上的有机光电二极管。 例如，有机光电二极管包括形成在第一电极上的绝缘层，形成在第一接触件，绝缘层和第二电极之间的第二电极和光电转换区域。 光电转换区域包括给电子有机材料和受电子有机材料。 有机光电二极管还可以包括电连接到第一触点的第二触点。 第二触点和绝缘层之间的水平距离可以小于或等于几微米，例如10微米。

公开(公告)号：US20140375826A1

公开(公告)日：2014-12-25

申请号：US14310305

申请日：2014-06-20

申请人： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deck Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

发明人： Myung Won Lee ,  Sang Chul Sul ,  Hirosige Goto ,  Sae Young Kim ,  Gwi Deck Ryan Lee ,  Masaru Ishii ,  Kyo Jin Choo

IPC分类号： H01L27/30 ,  H04N1/00

CPC分类号： H01L27/307 ,  H01L51/442 ,  H04N5/23229 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

摘要： An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

摘要翻译： 一种图像传感器，包括：第一层，其具有形成在半导体衬底中的多组光电二极管，每个组表示2×2的光电二极管阵列，其中2个第一像素被配置为检测第一波长的光和2秒的像素， 检测第二波长的光，每个第一像素定位成与第二像素相邻; 以及与所述第一层重叠的第二层，所述第二层是有机的，具有被配置为检测第三波长的光的多个有机光电二极管，每个有机光电二极管定位成部分地重叠第一层的2个第一光电二极管和2个第二光电二极管。

公开(公告)号：US09357142B2

公开(公告)日：2016-05-31

申请号：US14051802

申请日：2013-10-11

申请人： Tae Chan Kim ,  Min Ho Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Jung Hoon Jung ,  Young Gu Jin

发明人： Tae Chan Kim ,  Min Ho Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Jung Hoon Jung ,  Young Gu Jin

IPC分类号： H04N5/335 ,  H04N5/378

CPC分类号： H04N5/335 ,  H04N5/378

摘要： An image sensor includes a pixel array and a row driver block. The pixel array includes a plurality of subpixel groups, each including a plurality of subpixels. Each of the plurality of subpixels is configured to generate a subpixel signal corresponding to photocharge accumulated in response to a photon. The row driver block is configured to generate a first control signal to control the subpixels included in each of the plurality of subpixel groups to accumulate the photocharge in parallel from a first time point to a second time point.

摘要翻译： 图像传感器包括像素阵列和行驱动器块。 像素阵列包括多个子像素组，每个子像素组包括多个子像素。 多个子像素中的每一个被配置为产生对应于响应于光子累积的光电荷的子像素信号。 行驱动块被配置为生成第一控制信号，以控制包括在多个子像素组中的每个子像素组中的子像素，以从第一时间点到第二时间点并行地累积光电荷。

公开(公告)号：US09894301B2

公开(公告)日：2018-02-13

申请号：US14877539

申请日：2015-10-07

申请人： Young Gu Jin ,  Min Ho Kim ,  Tae Chan Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Ju Hwan Jung

发明人： Young Gu Jin ,  Min Ho Kim ,  Tae Chan Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Ju Hwan Jung

IPC分类号： H01L27/00 ,  H04N5/363 ,  H01L27/146 ,  H04N5/3745 ,  H04N5/374 ,  H04N5/378

CPC分类号： H04N5/363 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/378

摘要： ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.

公开(公告)号：US07196596B2

公开(公告)日：2007-03-27

申请号：US11059375

申请日：2005-02-17

申请人： Sang Chul Sul

发明人： Sang Chul Sul

IPC分类号： H03H9/00 ,  H03H9/10

CPC分类号： H03H9/0095 ,  H03H7/422 ,  H03H9/0542 ,  H03H9/586

摘要： An FBAR filter includes a wafer, a filter circuit unit and a balun circuit unit. The filter circuit unit includes a plurality of FBAR resonators formed on a predetermined region on a top of the wafer. The balun circuit unit includes a plurality of metal layers electrically connected to each other to implement a balun circuit and a plurality of dielectric layers each placed between the plurality of metal layers. The balun circuit unit is electrically connected to the filter circuit unit on a predetermined region of the wafer.

摘要翻译： FBAR滤波器包括晶片，滤波器电路单元和平衡 - 不平衡变换器电路单元。 滤波器电路单元包括形成在晶片顶部上的预定区域上的多个FBAR谐振器。 平衡 - 不平衡转换电路单元包括彼此电连接的多个金属层，以实现平衡 - 不平衡转换电路和多个介于各个金属层之间的电介质层。 平衡 - 不平衡变换器电路单元在晶片的预定区域上电连接到滤波器电路单元。

公开(公告)号：US07042312B2

公开(公告)日：2006-05-09

申请号：US10790011

申请日：2004-03-02

申请人： Sang Chul Sul ,  Jea Shik Shin

发明人： Sang Chul Sul ,  Jea Shik Shin

IPC分类号： H03H9/54 ,  H03H9/56

CPC分类号： H03H9/605

摘要： A ladder-type bulk acoustic wave filter includes an input terminal, an output terminal, a ground terminal, a plurality of series resonators connected in series between the input terminal and the output terminal, a plurality of shunt resonators, and a common ground inductor. Each shunt resonator has a first end and a second end. Each of the first ends of the shunt resonators is connected to a contact point of the series resonators. The second ends of the shunt resonators are commonly connected to a common terminal. The common ground inductor connects the common terminal of the shunt resonators to the ground terminal.

摘要翻译： 梯型体声波滤波器包括输入端子，输出端子，接地端子，串联连接在输入端子和输出端子之间的多个串联谐振器，多个并联谐振器和公共接地电感器。 每个并联谐振器具有第一端和第二端。 并联谐振器的每个第一端连接到串联谐振器的接触点。 并联谐振器的第二端通常连接到公共端子。 公共电感将并联谐振器的公共端子连接到接地端子。

公开(公告)号：US20160028977A1

公开(公告)日：2016-01-28

申请号：US14877539

申请日：2015-10-07

申请人： Young Gu JIN ,  Min Ho Kim ,  Tae Chan Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Ju Hwan Jung

发明人： Young Gu JIN ,  Min Ho Kim ,  Tae Chan Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Ju Hwan Jung

IPC分类号： H04N5/363 ,  H04N5/378 ,  H04N5/374 ,  H01L27/146

CPC分类号： H04N5/363 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/378

摘要： ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.

摘要翻译： ACMOS图像传感器包括具有多个像素的像素阵列。 所述多个像素中的每一个包括：被配置为基于第一栅极电压来控制的光栅结构; 以及感测晶体管，其包括形成在衬底区域中的电荷袋区域，所述感测晶体管被配置为基于第二栅极电压来控制。 基于第一栅极电压，光栅结构被配置为集成响应于入射在衬底区域上的光而产生的电荷。 感测晶体管被配置为根据第一栅极电压和第二栅极电压之间的差异，根据从光栅结构传输到电荷袋区域的电荷来调节感测晶体管的阈值电压和感测晶体管中的电流的至少一个 第二栅极电压。