公开(公告)号：US07795198B2

公开(公告)日：2010-09-14

申请号：US11840165

申请日：2007-08-16

申请人： Sang-Mi Lee ,  Kwang-Shin Lim ,  Jung-Dae Park ,  Tae-Hyo Choi

发明人： Sang-Mi Lee ,  Kwang-Shin Lim ,  Jung-Dae Park ,  Tae-Hyo Choi

IPC分类号： H01L21/02

CPC分类号： C11D11/0047 ,  C11D7/08 ,  C11D7/10 ,  C11D7/32 ,  C11D7/5022 ,  C11D11/0041

摘要： In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.

摘要翻译： 在用于除去可能保留在用于制造半导体器件的装置上的聚合物污染物的组合物和使用该组合物去除聚合物污染物的方法中，该组合物包含约5-10重量％的氟化物盐，约5重量％ 至15重量％的酸或其盐，和约75至90重量％的乙二醇水溶液。 组合物可以在相对短的时间内有效地从设备中除去聚合物污染物，并且抑制对装置的部件的损坏。

公开(公告)号：US20080051313A1

公开(公告)日：2008-02-28

申请号：US11840165

申请日：2007-08-16

申请人： Sang-Mi Lee ,  Kwang-Shin Lim ,  Jung-Dae Park ,  Tae-Hyo Choi

发明人： Sang-Mi Lee ,  Kwang-Shin Lim ,  Jung-Dae Park ,  Tae-Hyo Choi

IPC分类号： C11D3/20

CPC分类号： C11D11/0047 ,  C11D7/08 ,  C11D7/10 ,  C11D7/32 ,  C11D7/5022 ,  C11D11/0041

摘要： In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.

摘要翻译： 在用于除去可能保留在用于制造半导体器件的装置上的聚合物污染物的组合物中，以及使用该组合物除去聚合物污染物的方法，该组合物包括约5至10重量％的氟化物盐，约5至10重量％ 至15重量％的酸或其盐，和约75至90重量％的乙二醇水溶液。 组合物可以在相对短的时间内有效地从设备中除去聚合物污染物，并且抑制对装置的部件的损坏。

公开(公告)号：US07608540B2

公开(公告)日：2009-10-27

申请号：US11406243

申请日：2006-04-19

申请人： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

发明人： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC分类号： H01L29/00 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50

CPC分类号： C11D7/5013 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

摘要： A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

摘要翻译： 用于除去光致抗蚀剂的组合物包括约5至约20重量％的醇酰胺化合物，约15至约60重量％的极性非质子溶剂，约0.1至约6重量％的添加剂和纯水。 醇酰胺化合物的化学结构如下：其中R1是羟基或羟基烷基，R2是氢原子或羟烷基。

公开(公告)号：US20060287207A1

公开(公告)日：2006-12-21

申请号：US11406243

申请日：2006-04-19

申请人： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

发明人： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC分类号： C11D7/32

CPC分类号： C11D7/5013 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

摘要： A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

摘要翻译： 用于除去光致抗蚀剂的组合物包括约5至约20重量％的醇酰胺化合物，约15至约60重量％的极性非质子溶剂，约0.1至约6重量％的添加剂和纯水。 醇酰胺化合物的化学结构如下：其中R 1是羟基或羟烷基，R 2是氢原子或羟烷基。

公开(公告)号：US07687448B2

公开(公告)日：2010-03-30

申请号：US12564077

申请日：2009-09-22

申请人： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

发明人： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC分类号： C11D7/26 ,  C11D7/32 ,  C11D7/50

CPC分类号： C11D7/5013 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

摘要： A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

摘要翻译： 用于除去光致抗蚀剂的组合物包括约5至约20重量％的醇酰胺化合物，约15至约60重量％的极性非质子溶剂，约0.1至约6重量％的添加剂和纯水。 醇酰胺化合物的化学结构如下：其中R1是羟基或羟基烷基，R2是氢原子或羟烷基。

公开(公告)号：US07351667B2

公开(公告)日：2008-04-01

申请号：US11580937

申请日：2006-10-16

申请人： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

发明人： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

IPC分类号： H01L21/469

CPC分类号： H01L27/10855 ,  H01L21/31111 ,  H01L21/76816

摘要： An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

摘要翻译： 在用于扩大通过氧化硅层形成的开口的工艺中可以使用用于氧化硅的蚀刻溶液。 蚀刻溶液包含约0.2至约5.0重量％的氟化氢溶液，约0.05至约20.0重量％的氟化铵溶液，约40.0至约70.0重量％的烷基氢氧化物溶液和剩余的水。 蚀刻溶液可以蚀刻氧化硅层而不损坏由开口暴露的金属硅化物层。

公开(公告)号：US20070037400A1

公开(公告)日：2007-02-15

申请号：US11495706

申请日：2006-07-31

申请人： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

发明人： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32134

摘要： Embodiments of the invention provide a composition adapted to remove polysilicon. The composition comprises about 1.0 to 10 percent by weight of alkylammonium hydroxide, about 0.1 to 5.0 percent by weight of hydrogen peroxide, and water.

摘要翻译： 本发明的实施方案提供了适于去除多晶硅的组合物。 该组合物包含约1.0-10重量％的烷基氢氧化铵，约0.1-5.0重量％的过氧化氢和水。

公开(公告)号：US20070000523A1

公开(公告)日：2007-01-04

申请号：US11454829

申请日：2006-06-19

申请人： Se-Yeon Kim ,  Pil-Kwon Jun ,  Jung-Dae Park ,  Myoung-Ok Han ,  Jea-Wook Kim ,  Seung-Ki Chae ,  Kook-Joo Kim ,  Jae-Seok Lee ,  Yong-Kyun Ko ,  Kwang-Shin Lim ,  Yang-Koo Lee

发明人： Se-Yeon Kim ,  Pil-Kwon Jun ,  Jung-Dae Park ,  Myoung-Ok Han ,  Jea-Wook Kim ,  Seung-Ki Chae ,  Kook-Joo Kim ,  Jae-Seok Lee ,  Yong-Kyun Ko ,  Kwang-Shin Lim ,  Yang-Koo Lee

IPC分类号： B08B3/04

CPC分类号： H01L21/02071 ,  C11D3/0073 ,  C11D7/10 ,  C11D7/3209 ,  C11D11/0023 ,  H01L27/10885

摘要： A cleaning composition is disclosed. The cleaning composition comprises about 80 to 99.8999 percent by weight of an ammonium fluoride aqueous solution, about 0.1 to 5 percent by weight of a buffering agent, and about 0.0001 to 15 percent by weight of a corrosion-inhibiting agent. A method of preparing the cleaning composition, a method of cleaning a substrate using the cleaning composition, and a method of manufacturing a semiconductor device using the cleaning composition are also disclosed.

摘要翻译： 公开了一种清洁组合物。 该清洗组合物含有约80-99.8999重量％的氟化铵水溶液，约0.1-5重量％的缓冲剂和约0.0001-15重量％的腐蚀抑制剂。 还公开了一种制备清洁组合物的方法，使用清洁组合物清洁基材的方法，以及使用该清洁组合物制造半导体器件的方法。

公开(公告)号：US07951653B1

公开(公告)日：2011-05-31

申请号：US12948331

申请日：2010-11-17

申请人： Jung-Dae Park ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

发明人： Jung-Dae Park ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

IPC分类号： H01L21/00

CPC分类号： H01L21/32134 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

摘要翻译： 制造半导体器件的方法包括制备其上形成有铜的引线的衬底。 该方法还包括通过发射激光束切割引信线，以及将用于蚀刻铜的组合物施加到基底上，以精细蚀刻引信线的切割区域并基本上除去铜残留物和氧化铜残留物中的至少一种 保留在切割区附近。 用于蚀刻铜的组合物包括约0.01至约10重量％的有机酸，约0.01至1.0重量％的氧化剂和质子溶剂。

公开(公告)号：US20110130000A1

公开(公告)日：2011-06-02

申请号：US12948331

申请日：2010-11-17

申请人： Jung-Dae PARK ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

发明人： Jung-Dae PARK ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

IPC分类号： H01L21/60

CPC分类号： H01L21/32134 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

摘要翻译： 制造半导体器件的方法包括制备其上形成有铜的引线的衬底。 该方法还包括通过发射激光束切割引信线，以及将用于蚀刻铜的组合物施加到基底上，以精细蚀刻引信线的切割区域并基本上除去铜残留物和氧化铜残留物中的至少一种 保留在切割区附近。 用于蚀刻铜的组合物包括约0.01至约10重量％的有机酸，约0.01至1.0重量％的氧化剂和质子溶剂。