Thin film transistor array substrate and manufacturing method thereof
    2.
    发明授权
    Thin film transistor array substrate and manufacturing method thereof 有权
    薄膜晶体管阵列基板及其制造方法

    公开(公告)号:US07947985B2

    公开(公告)日:2011-05-24

    申请号:US12435773

    申请日:2009-05-05

    IPC分类号: H01L27/14

    摘要: A thin film transistor array substrate and its manufacturing method are disclosed. A thin film transistor (TFT) includes a gate electrode formed on a substrate, and source and drain electrodes formed on the gate electrode and separated from each other. A common line made of the same material as the gate electrode is formed on the substrate. A storage capacitor includes a storage electrode connected with a storage electrode line and a pixel electrode formed on the storage electrode. The storage electrode and the pixel electrode are formed by patterning a transparent conductive film, and accordingly, light can be transmitted through the region where the storage capacitor is formed to thus increase an aperture ratio.

    摘要翻译: 公开了薄膜晶体管阵列基板及其制造方法。 薄膜晶体管(TFT)包括形成在基板上的栅极电极和形成在栅电极上并彼此分离的源极和漏极。 在基板上形成由与栅电极相同的材料构成的公共线。 存储电容器包括与存储电极线连接的存储电极和形成在存储电极上的像素电极。 存储电极和像素电极通过图案化透明导电膜而形成,因此可以通过形成存储电容器的区域透射光,从而增加开口率。

    Thin film transistor substrate and manufacturing method thereof
    3.
    发明授权
    Thin film transistor substrate and manufacturing method thereof 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US08044405B2

    公开(公告)日:2011-10-25

    申请号:US12429388

    申请日:2009-04-24

    IPC分类号: H01L29/12 H01L21/336

    摘要: A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

    摘要翻译: 提供一种薄膜晶体管(TFT)基板,其中在接触部分中提供导电材料之间的足够大的接触面积以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极互连线,覆盖栅极互连线的栅极绝缘层,布置在栅极绝缘层上的半导体层,包括数据线,源极和漏极的数据互连线 形成在所述半导体层上,形成在所述数据互连线上并暴露所述漏电极的第一钝化层,形成在所述第一钝化膜上的第二钝化层和与所述漏电极电连接的像素电极。 第二钝化层的外侧壁位于第一钝化层的外侧壁的内侧。

    METHOD OF MANUFACTURING A THIN FILM TRANSISTOR ARRAY SUBSTRATE
    4.
    发明申请
    METHOD OF MANUFACTURING A THIN FILM TRANSISTOR ARRAY SUBSTRATE 有权
    制造薄膜晶体管阵列基板的方法

    公开(公告)号:US20100159652A1

    公开(公告)日:2010-06-24

    申请号:US12436356

    申请日:2009-05-06

    IPC分类号: H01L21/336

    摘要: In manufacturing a thin film transistor array substrate, a passivation film is formed over the transistors. A first photoresist pattern is formed over the passivation film, with a first portion partially overlying at least one source/drain electrode of each transistor and overlying each pixel electrode region, and with a second portion thicker than the first portion. The passivation film is patterned using the first photoresist pattern as a mask. The first photoresist pattern's first portion is removed to form a second photoresist pattern which protrudes upward around the pixel electrode regions. A transparent conductive film is formed with recesses in the pixel electrode regions. A masking pattern is formed over the transparent film in each pixel electrode region, the masking pattern's top surface being below a top of the transparent film. The transparent film is patterned using the masking pattern as a mask to form the pixel electrodes.

    摘要翻译: 在制造薄膜晶体管阵列基板时,在晶体管上形成钝化膜。 在钝化膜上形成第一光致抗蚀剂图案,其中第一部分部分地覆盖每个晶体管的至少一个源极/漏电极并且覆盖每个像素电极区域,并且具有比第一部分更厚的第二部分。 使用第一光致抗蚀剂图案作为掩模来图案化钝化膜。 去除第一光致抗蚀剂图案的第一部分以形成在像素电极区域周围向上突出的第二光致抗蚀剂图案。 透明导电膜在像素电极区域中形成有凹陷。 在每个像素电极区域中的透明膜上形成掩模图案,掩模图案的顶表面在透明膜的顶部之下。 使用掩模图案作为掩模来对透明膜进行图案化以形成像素电极。

    Thin film transistor substrate and manufacturing method thereof
    5.
    发明授权
    Thin film transistor substrate and manufacturing method thereof 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US08450129B2

    公开(公告)日:2013-05-28

    申请号:US13231225

    申请日:2011-09-13

    IPC分类号: H01L33/16

    摘要: A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

    摘要翻译: 提供一种薄膜晶体管(TFT)基板,其中在接触部分中提供导电材料之间的足够大的接触面积以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极互连线,覆盖栅极互连线的栅极绝缘层,布置在栅极绝缘层上的半导体层,包括数据线,源极和漏极的数据互连线 形成在所述半导体层上,形成在所述数据互连线上并暴露所述漏电极的第一钝化层,形成在所述第一钝化膜上的第二钝化层和与所述漏电极电连接的像素电极。 第二钝化层的外侧壁位于第一钝化层的外侧壁的内侧。

    Method of manufacturing a thin film transistor array substrate
    6.
    发明授权
    Method of manufacturing a thin film transistor array substrate 有权
    制造薄膜晶体管阵列基板的方法

    公开(公告)号:US07902006B2

    公开(公告)日:2011-03-08

    申请号:US12436356

    申请日:2009-05-06

    摘要: In manufacturing a thin film transistor array substrate, a passivation film is formed over the transistors. A first photoresist pattern is formed over the passivation film, with a first portion partially overlying at least one source/drain electrode of each transistor and overlying each pixel electrode region, and with a second portion thicker than the first portion. The passivation film is patterned using the first photoresist pattern as a mask. The first photoresist pattern's first portion is removed to form a second photoresist pattern which protrudes upward around the pixel electrode regions. A transparent conductive film is formed with recesses in the pixel electrode regions. A masking pattern is formed over the transparent film in each pixel electrode region, the masking pattern's top surface being below a top of the transparent film. The transparent film is patterned using the masking pattern as a mask to form the pixel electrodes.

    摘要翻译: 在制造薄膜晶体管阵列基板时,在晶体管上形成钝化膜。 在钝化膜上形成第一光致抗蚀剂图案,其中第一部分部分地覆盖每个晶体管的至少一个源极/漏电极并且覆盖每个像素电极区域,并且具有比第一部分更厚的第二部分。 使用第一光致抗蚀剂图案作为掩模来图案化钝化膜。 去除第一光致抗蚀剂图案的第一部分以形成在像素电极区域周围向上突出的第二光致抗蚀剂图案。 透明导电膜在像素电极区域中形成有凹陷。 在每个像素电极区域中的透明膜上形成掩模图案,掩模图案的顶表面在透明膜的顶部之下。 使用掩模图案作为掩模来对透明膜进行图案化以形成像素电极。

    Liquid Crystal Display
    7.
    发明申请
    Liquid Crystal Display 有权
    液晶显示器

    公开(公告)号:US20130201431A1

    公开(公告)日:2013-08-08

    申请号:US13483909

    申请日:2012-05-30

    摘要: A liquid crystal display includes a display panel having a plurality of pixels. The display panel includes a first substrate and a second substrate opposing each other. A liquid crystal layer is positioned between the first substrate and the second substrate. A pixel electrode is positioned on the first substrate and positioned in one pixel of the plurality of pixels. An opposing electrode faces the pixel electrode with the liquid crystal layer interposed therebetween. At least one of the pixel electrode and the opposing electrode includes a liquid crystal inclination direction determining member. A transmission region of the pixel includes a first region and a second region that have different cell gaps of the liquid crystal layer from each other and extension directions of the liquid crystal inclination direction determining member in the first region and the second region are different from each other.

    摘要翻译: 液晶显示器包括具有多个像素的显示面板。 显示面板包括彼此相对的第一基板和第二基板。 液晶层位于第一基板和第二基板之间。 像素电极位于第一基板上并且位于多个像素的一个像素中。 相对电极面对像素电极,其间插入液晶层。 像素电极和对置电极中的至少一个包括液晶倾斜方向确定部件。 像素的透射区域包括第一区域和第二区域,第一区域和第二区域具有液晶层彼此不同的单元间隙,并且第一区域和第二区域中的液晶倾斜方向确定构件的延伸方向各自不同 其他。

    MULTIPLE-LAYER, MULTIPLE FILM HAVING THE SAME AND ELECTRONIC DEVICE HAVING THE SAME
    8.
    发明申请
    MULTIPLE-LAYER, MULTIPLE FILM HAVING THE SAME AND ELECTRONIC DEVICE HAVING THE SAME 审中-公开
    多层膜,具有该膜的多层膜和具有该膜的电子器件

    公开(公告)号:US20120193768A1

    公开(公告)日:2012-08-02

    申请号:US13401605

    申请日:2012-02-21

    IPC分类号: H01L23/29

    摘要: The present invention provides a multiple layer that comprises two or more first inorganic material layers; and one or more second inorganic material layers that are positioned between the two first inorganic material layers and have the thickness of less than 5 nm, in which the first inorganic material layer is formed of one or more materials that are selected from silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO, and the second inorganic material layer is formed of one or more materials that are selected from magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof, a multiple film that comprises the multiple layer, and an electronic device that comprises the multiple film.

    摘要翻译: 本发明提供一种包含两个或更多个第一无机材料层的多层; 以及位于所述两个第一无机材料层之间且具有小于5nm的厚度的一个或多个第二无机材料层,其中所述第一无机材料层由选自氧化硅,硅中的一种或多种材料形成 碳化物,氮化硅,氮化铝和ITO,第二无机材料层由选自镁,钙,铝,镓,铟,锌,锡,钡及其氧化物和氟化物的一种或多种材料形成, 包括多层的多层膜,以及包括该多层膜的电子器件。

    Method and mobile terminal for outputting automatic response message with implementation of schedule management function
    9.
    发明授权
    Method and mobile terminal for outputting automatic response message with implementation of schedule management function 有权
    用于输出自动应答消息的方法和移动终端,实现进度管理功能

    公开(公告)号:US08121627B2

    公开(公告)日:2012-02-21

    申请号:US11835205

    申请日:2007-08-07

    IPC分类号: H04W4/00 H04M1/00

    CPC分类号: H04M1/645 H04M1/72566

    摘要: Disclosed are a method and a mobile terminal for outputting an automatic response message informing a caller of a user's (i.e. recipient's) current schedule when the user is unable to answer an incoming call. The method includes receiving an incoming call, determining whether an automatic response key is pressed to output an automatic response message with implementation of the schedule management function, detecting any schedule information corresponding to the current time by reference to a schedule management table when the automatic response key is pressed, and sending a schedule informing message including the detected schedule information to a caller's terminal.

    摘要翻译: 公开了一种方法和移动终端,用于在用户不能应答呼入时输出通知呼叫者用户(即接收方)当前时间表的自动应答消息。 该方法包括接收来电,确定是否按照自动响应键输出自动响应消息,并执行日程管理功能,当自动响应时参考时间表管理表,检测与当前时间相对应的任何时间表信息 键,并向呼叫者的终端发送包括检测到的日程信息的调度通知消息。

    SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件,发光器件及其制造方法

    公开(公告)号:US20110272703A1

    公开(公告)日:2011-11-10

    申请号:US13145790

    申请日:2009-12-09

    IPC分类号: H01L29/12 H01L21/20 H01L33/02

    摘要: Disclosed are a semiconductor device, a light emitting device and a method for manufacturing the same. The semiconductor device includes a substrate, a plurality of rods disposed on the substrate, a plurality of particles disposed between the rods and on the substrate, and a first semiconductor layer disposed on the rods. The method for manufacturing the semiconductor device includes preparing a substrate, disposing a plurality of first particles on the substrate, and forming a plurality of rods by etching a portion of the substrate by using the first particles as an etch mask. The semiconductor device effectively reflects in an upward direction light by the above particles, so that light efficiency is improved. The rods are easily formed by using the first particles.

    摘要翻译: 公开了一种半导体器件,发光器件及其制造方法。 半导体器件包括衬底,设置在衬底上的多个棒,设置在杆之间和衬底上的多个颗粒以及设置在杆上的第一半导体层。 半导体器件的制造方法包括:准备基板,在基板上配置多个第一粒子,通过使用第一粒子作为蚀刻掩模,蚀刻基板的一部分来形成多个棒。 半导体器件通过上述粒子有效地向上方向反射光,从而提高光效率。 通过使用第一颗粒容易地形成棒。