摘要:
A method and an apparatus for verifying a logic circuit, capable of quicker operation, being applied to a logic gate-level or transistor-level circuit design, and verifying timing and analog signal characteristics of a signal. The logic circuit verification method includes a wave file generation stage and a logic circuit verification stage. The wave file generation stage generates a wave file that includes the waveforms of all nodes of the logic circuit using a design source file of the logic circuit. The stage of verification of the logic circuit verifies the logic circuit using a design reference file, which includes ideal operations of all the nodes of the logic circuit, and the wave file.
摘要:
A method and an apparatus for verifying a logic circuit, capable of quicker operation, being applied to a logic gate-level or transistor-level circuit design, and verifying timing and analog signal characteristics of a signal. The logic circuit verification method includes a wave file generation stage and a logic circuit verification stage. The wave file generation stage generates a wave file that includes the waveforms of all nodes of the logic circuit using a design source file of the logic circuit. The stage of verification of the logic circuit verifies the logic circuit using a design reference file, which includes ideal operations of all the nodes of the logic circuit, and the wave file.
摘要:
Operations for generating an integrated circuit netlist include generating a first schematic of an integrated circuit having a plurality of cells therein and generating a second schematic that defines pre-layout electrical interconnects between the plurality of cells of the integrated circuit and approximates parasitic resistances and parasitic capacitances of the pre-layout interconnects. The first and second schematics are then combined at corresponding first and second ports within the first and second schematics, respectively. Operations also include generating an integrated circuit netlist by generating a circuit schematic that defines post-layout electrical interconnects between the plurality of cells of the integrated circuit and approximates parasitic resistances and parasitic capacitances of the post-layout interconnects. This circuit schematic is then combined with the first schematic at corresponding first and second ports therein. These embodiments may also be configured to generate a layout schematic from the first schematic of the integrated circuit and generate parasitic resistances and capacitances of the post-layout interconnects that extend between a plurality of cells in the layout schematic. Operations are then performed to generate parasitic resistances and capacitances of interconnects internal to at least one cell in the layout schematic.
摘要:
Dummy patterns are generated for a region of an integrated circuit that is divided into buckets by obtaining a local pattern density for a respective bucket and adjusting a density of the dummy pattern for the respective bucket as a continuously variable function of the respective local pattern density and a target density for the region. By providing a continuously variable dummy pattern density, the desired density of the dummy pattern group may be adjusted precisely, to thereby reduce or eliminate loading effects. The density of the dummy pattern for the respective bucket may be calculated according to a formula in which the density of the dummy pattern is continuously variable. The dummy patterns may include features of fixed pitch and a size of the features of fixed pitch is increased or decreased as a continuously variable function of the respective local pattern density and the target density for the region.
摘要:
A mask set with a light-transmitting region of a controlled size includes a plurality of masks for performing in-situ synthesis on probes of a microarray, wherein each mask includes a light-transmitting region and a light-blocking region, and the size of the light-transmitting region is equal to or greater than about 5% of the total size of the light-transmitting and light-blocking regions.
摘要:
Provided are a method and apparatus for designing a fine pattern that can be entirely transferred onto an object. The method includes reading the original data of a fine pattern for exposure. The fine pattern is divided into a first pattern not requiring revision and a second pattern requiring revision. The fine pattern is revised by forming an auxiliary pattern maintaining a first distance D1 from the second pattern. A fine pattern to be transferred onto a target object is estimated by running an emulation program including a first auxiliary pattern and a second auxiliary pattern. The estimated fine pattern is compared to the original data of the fine pattern for exposure, and the revised fine pattern is designated as a final fine pattern if there is no difference between the estimated fine pattern and the original data of the fine pattern for exposure.
摘要:
A mask set with a light-transmitting region of a controlled size includes a plurality of masks for performing in-situ synthesis on probes of a microarray, wherein each mask includes a light-transmitting region and a light-blocking region, and the size of the light-transmitting region is equal to or greater than about 5% of the total size of the light-transmitting and light-blocking regions.
摘要:
Provided are a mask set for in-situ synthesizing probes of a microarray, a method of fabricating the mask set, and a method of fabricating the microarray using the mask set. A mask set for a microarray includes a plurality of masks for in-situ synthesizing probes onto a substrate which includes an array of a plurality of probe cells, wherein each mask includes light-transmitting regions and light-blocking regions, each probe cell corresponds to a light-transmitting region or a light-blocking region, and a pattern of each light-transmitting region is corrected for an optical proximity effect.
摘要:
Provided are a method and apparatus for designing a fine pattern that can be entirely transferred onto an object. The method includes reading the original data of a fine pattern for exposure. The fine pattern is divided into a first pattern not requiring revision and a second pattern requiring revision. The fine pattern is revised by forming an auxiliary pattern maintaining a first distance D1 from the second pattern. A fine pattern to be transferred onto a target object is estimated by running an emulation program including a first auxiliary pattern and a second auxiliary pattern. The estimated fine pattern is compared to the original data of the fine pattern for exposure, and the revised fine pattern is designated as a final fine pattern if there is no difference between the estimated fine pattern and the original data of the fine pattern for exposure.
摘要:
Operations for generating an integrated circuit netlist include generating a first schematic of an integrated circuit having a plurality of cells therein and generating a second schematic that defines pre-layout electrical interconnects between the plurality of cells of the integrated circuit and approximates parasitic resistances and parasitic capacitances of the pre-layout interconnects. The first and second schematics are then combined at corresponding first and second ports within the first and second schematics, respectively. Operations also include generating an integrated circuit netlist by generating a circuit schematic that defines post-layout electrical interconnects between the plurality of cells of the integrated circuit and approximates parasitic resistances and parasitic capacitances of the post-layout interconnects. This circuit schematic is then combined with the first schematic at corresponding first and second ports therein. These embodiments may also be configured to generate a layout schematic from the first schematic of the integrated circuit and generate parasitic resistances and capacitances of the post-layout interconnects that extend between a plurality of cells in the layout schematic. Operations are then performed to generate parasitic resistances and capacitances of interconnects internal to at least one cell in the layout schematic.