Abstract:
A transmission apparatus, a reception apparatus, a transmission system which combines these, and a transmission and reception method thereof are provided. The transmission apparatus includes a first transmission unit which transmits data via a channel in a first band, a second transmission unit which transmits data via a channel in a second band, and a transmission control unit which controls the first transmission unit to stop transmitting the data via the channel in the first band if interference is sensed in the channel in the first band. Accordingly, data can be provided without data interruption in a wireless environment where there is interference.
Abstract:
A video signal processing apparatus and method and a display apparatus are provided. The video signal processing apparatus includes: an input unit through which a video signal is input; a signal processing unit which processes the video signal input through the input unit, wherein signal processing unit encodes the video signal if a transmission distance from the transmitting unit to the display apparatus is greater than a reference distance; and a transmitting unit which transmits the video signal processed by the signal processing unit to a display apparatus using wireless communication.
Abstract:
A neutral beam-assisted atomic layer chemical vapor deposition (ALCVD) apparatus is provided for uniformly depositing an oxide layer filling a planarization layer or a trench to increase uniformity and density of the oxide layer using neutral beams generated by a neutral beam generator without a seam or void occurring in an atomic layer deposition (ALD) or ALD-like chemical vapor deposition (CVD) process, thereby solving problems on the void or seam and low density occurring when a high-density planarization layer or a shallow trench having a width of 65 nm or less is formed, and improving a next generation oxide layer isolation process. The neutral beam-assisted ALCVD apparatus includes: an ALCVD apparatus, which deposits an oxide layer in order to form a pattern in a semiconductor substrate; and a neutral beam generator, which converts ion beams to neutral beams in order to remove a seam or void in the oxide layer deposited between the patterns, and applies the neutral beams to the oxide layer deposited to form the pattern.
Abstract:
A neutral beam-assisted atomic layer chemical vapor deposition (ALCVD) apparatus is provided for uniformly depositing an oxide layer filling a planarization layer or a trench to increase uniformity and density of the oxide layer using neutral beams generated by a neutral beam generator without a seam or void occurring in an atomic layer deposition (ALD) or ALD-like chemical vapor deposition (CVD) process, thereby solving problems on the void or seam and low density occurring when a high-density planarization layer or a shallow trench having a width of 65 nm or less is formed, and improving a next generation oxide layer isolation process. The neutral beam-assisted ALCVD apparatus includes: an ALCVD apparatus, which deposits an oxide layer in order to form a pattern in a semiconductor substrate; and a neutral beam generator, which converts ion beams to neutral beams in order to remove a seam or void in the oxide layer deposited between the patterns, and applies the neutral beams to the oxide layer deposited to form the pattern.