公开(公告)号：US20110079858A1

公开(公告)日：2011-04-07

申请号：US12967728

申请日：2010-12-14

申请人： Satoru Akiyama ,  Tomonori Sekiguchi ,  Riichiro Takemura ,  Hiroaki Nakaya ,  Shinichi Miyatake ,  Yuko Watanabe

发明人： Satoru Akiyama ,  Tomonori Sekiguchi ,  Riichiro Takemura ,  Hiroaki Nakaya ,  Shinichi Miyatake ,  Yuko Watanabe

IPC分类号： H01L27/108

CPC分类号： G11C11/4091 ,  H01L27/10897

摘要： A semiconductor memory device having high integration, low power consumption and high operation speed. The memory device includes a sense amplifier circuit having plural pull-down circuits and a pull-up circuit. A transistor constituting one of the plural pull-down circuits has a larger constant than that of a transistor constituting the other pull-down circuits, for example, a channel length and a channel width. The pull-down circuit having the larger constant transistor is activated earlier than the other pull-down circuits and the pull-up circuit, which are activated to conduct reading. The data line and the earlier driven pull-down circuit are connected by an NMOS transistor and the NMOS transistor is activated or inactivated to control the activation or inactivation of the pull-down circuit.

摘要翻译： 具有高集成度，低功耗和高操作速度的半导体存储器件。 存储器件包括具有多个下拉电路和上拉电路的读出放大器电路。 构成多个下拉电路中的一个的晶体管具有比构成其它下拉电路的晶体管的常数更大的常数，例如沟道长度和沟道宽度。 具有较大恒定晶体管的下拉电路比另一个下拉电路和上拉电路更早启动，这些电路被激活以进行读取。 数据线和较早驱动的下拉电路由NMOS晶体管连接，并且NMOS晶体管被激活或失活以控制下拉电路的激活或失活。

公开(公告)号：US20080175084A1

公开(公告)日：2008-07-24

申请号：US11969223

申请日：2008-01-03

申请人： Satoru AKIYAMA ,  Tomonori Sekiguchi ,  Riichiro Takemura ,  Hiroaki Nakaya ,  Shinichi Miyatake ,  Yuko Watanabe

发明人： Satoru AKIYAMA ,  Tomonori Sekiguchi ,  Riichiro Takemura ,  Hiroaki Nakaya ,  Shinichi Miyatake ,  Yuko Watanabe

IPC分类号： G11C7/06

CPC分类号： G11C11/4091 ,  H01L27/10897

摘要： A semiconductor memory device having high integration, low consumption power and high operation speed compatible to each other including a sense amplifier circuit having plural pull-down circuits and a pull-up circuit, in which a transistor constituting one of plural pull-down circuits has a larger constant than that of a transistor constituting other pull-down circuits, for example, a channel length and a channel width, a pull-down circuit having a larger constant of the transistor in the plural pull-down circuits is precedingly activated and then another pull-down circuit and the pull-up circuit are activated to conduct reading and, further, the data line and the precedingly driven pull-down circuit are connected by an NMOS transistor and the NMOS transistor is activated or inactivated to control the activation or inactivation of the pull-down circuit.

摘要翻译： 一种具有高集成度，低功耗和高运行速度的半导体存储器件，包括具有多个下拉电路和上拉电路的读出放大器电路，其中构成多个下拉电路中的一个的晶体管具有 比构成其他下拉电路的晶体管（例如沟道长度和沟道宽度）的常数大的常数，在多个下拉电路中具有较大的晶体管常数的下拉电路先前被激活，然后 另一个下拉电路和上拉电路被激活以进行读取，此外，数据线和先前驱动的下拉电路通过NMOS晶体管连接，并且NMOS晶体管被激活或失活以控制激活或 下拉电路失活。

公开(公告)号：US07876627B2

公开(公告)日：2011-01-25

申请号：US11969223

申请日：2008-01-03

申请人： Satoru Akiyama ,  Tomonori Sekiguchi ,  Riichiro Takemura ,  Hiroaki Nakaya ,  Shinichi Miyatake ,  Yuko Watanabe

发明人： Satoru Akiyama ,  Tomonori Sekiguchi ,  Riichiro Takemura ,  Hiroaki Nakaya ,  Shinichi Miyatake ,  Yuko Watanabe

IPC分类号： G11C7/06

CPC分类号： G11C11/4091 ,  H01L27/10897

摘要： A semiconductor memory device having high integration, low power consumption and high operation speed. The memory device includes a sense amplifier circuit having plural pull-down circuits and a pull-up circuit. A transistor constituting one of the plural pull-down circuits has a larger constant than that of a transistor constituting the other pull-down circuits, for example, a channel length and a channel width. The pull-down circuit having the larger constant transistor is activated earlier than the other pull-down circuits and the pull-up circuit, which are activated to conduct reading. The data line and the earlier driven pull-down circuit are connected by an NMOS transistor and the NMOS transistor is activated or inactivated to control the activation or inactivation of the pull-down circuit.

摘要翻译： 具有高集成度，低功耗和高操作速度的半导体存储器件。 存储器件包括具有多个下拉电路和上拉电路的读出放大器电路。 构成多个下拉电路中的一个的晶体管具有比构成其它下拉电路的晶体管的常数更大的常数，例如沟道长度和沟道宽度。 具有较大恒定晶体管的下拉电路比另一个下拉电路和上拉电路更早启动，这些电路被激活以进行读取。 数据线和较早驱动的下拉电路由NMOS晶体管连接，并且NMOS晶体管被激活或失活以控制下拉电路的激活或失活。

公开(公告)号：US07995405B2

公开(公告)日：2011-08-09

申请号：US12967728

申请日：2010-12-14

申请人： Satoru Akiyama ,  Tomonori Sekiguchi ,  Riichiro Takemura ,  Hiroaki Nakaya ,  Shinichi Miyatake ,  Yuko Watanabe

发明人： Satoru Akiyama ,  Tomonori Sekiguchi ,  Riichiro Takemura ,  Hiroaki Nakaya ,  Shinichi Miyatake ,  Yuko Watanabe

IPC分类号： G11C7/06

CPC分类号： G11C11/4091 ,  H01L27/10897

摘要： A semiconductor memory device having high integration, low power consumption and high operation speed. The memory device includes a sense amplifier circuit having plural pull-down circuits and a pull-up circuit. A transistor constituting one of the plural pull-down circuits has a larger constant than that of a transistor constituting the other pull-down circuits, for example, a channel length and a channel width. The pull-down circuit having the larger constant transistor is activated earlier than the other pull-down circuits and the pull-up circuit, which are activated to conduct reading. The data line and the earlier driven pull-down circuit are connected by an NMOS transistor and the NMOS transistor is activated or inactivated to control the activation or inactivation of the pull-down circuit.

公开(公告)号：US07609572B2

公开(公告)日：2009-10-27

申请号：US11963831

申请日：2007-12-22

申请人： Hiroaki Nakaya ,  Riichiro Takemura ,  Satoru Akiyama ,  Tomonori Sekiguchi ,  Masayuki Nakamura ,  Shinichi Miyatake

发明人： Hiroaki Nakaya ,  Riichiro Takemura ,  Satoru Akiyama ,  Tomonori Sekiguchi ,  Masayuki Nakamura ,  Shinichi Miyatake

IPC分类号： G11C7/00

CPC分类号： G11C11/4091 ,  G11C7/08 ,  G11C2207/005

摘要： In a semiconductor memory device, with respect to low voltage application, technique of controlling a gate voltage of a shared MOS transistor increasing sense speed and increasing data read speed by preventing data inversion caused by noise and reducing bit line capacitance during sensing is provided. By a shared MOS transistor gate voltage control circuit connecting a sense amplifier and a memory cell array, a shared MOS transistor gate voltage (SHR) is lowered in two stages and bit line capacitance to be amplified is reduced taking noise during the sensing into consideration so that the sense speed is increased. Therefore, a timing of activating a column selection signal can be hastened and as a result, data read time can be reduced.

摘要翻译： 在半导体存储器件中，关于低电压应用，提供了通过防止由噪声引起的数据反转和降低感测期间的位线电容来控制共享MOS晶体管的栅极电压提高感测速度并增加数据读取速度的技术。 通过连接读出放大器和存储单元阵列的共享MOS晶体管栅极电压控制电路，共享的MOS晶体管栅极电压（SHR）分为两级降低，并且在感测期间考虑到噪声，放大的位线电容降低 感觉速度增加。 因此，可以加快激活列选择信号的定时，结果可以减少数据读取时间。

公开(公告)号：US20080181026A1

公开(公告)日：2008-07-31

申请号：US11963831

申请日：2007-12-22

申请人： Hiroaki Nakaya ,  Riichiro Takemura ,  Satoru Akiyama ,  Tomonori Sekiguchi ,  Masayuki Nakamura ,  Shinichi Miyatake

发明人： Hiroaki Nakaya ,  Riichiro Takemura ,  Satoru Akiyama ,  Tomonori Sekiguchi ,  Masayuki Nakamura ,  Shinichi Miyatake

IPC分类号： G11C7/08

CPC分类号： G11C11/4091 ,  G11C7/08 ,  G11C2207/005

摘要： In a semiconductor memory device, with respect to low voltage application, technique of controlling a gate voltage of a shared MOS transistor increasing sense speed and increasing data read speed by preventing data inversion caused by noise and reducing bit line capacitance during sensing is provided. By a shared MOS transistor gate voltage control circuit connecting a sense amplifier and a memory cell array, a shared MOS transistor gate voltage (SHR) is lowered in two stages and bit line capacitance to be amplified is reduced taking noise during the sensing into consideration so that the sense speed is increased. Therefore, a timing of activating a column selection signal can be hastened and as a result, data read time can be reduced.

摘要翻译： 在半导体存储器件中，关于低电压应用，提供了通过防止由噪声引起的数据反转和降低感测期间的位线电容来控制共享MOS晶体管的栅极电压提高感测速度并增加数据读取速度的技术。 通过连接读出放大器和存储单元阵列的共享MOS晶体管栅极电压控制电路，共享的MOS晶体管栅极电压（SHR）分为两级降低，并且在感测期间考虑到噪声，放大的位线电容降低 感觉速度增加。 因此，可以加快激活列选择信号的定时，结果可以减少数据读取时间。

公开(公告)号：US20090180341A1

公开(公告)日：2009-07-16

申请号：US12314860

申请日：2008-12-17

申请人： Akira Ide ,  Yasuhiro Takai ,  Tomonori Sekiguchi ,  Riichiro Takemura ,  Satoru Akiyama ,  Hiroaki Nakaya

发明人： Akira Ide ,  Yasuhiro Takai ,  Tomonori Sekiguchi ,  Riichiro Takemura ,  Satoru Akiyama ,  Hiroaki Nakaya

IPC分类号： G11C7/00 ,  H03L7/06 ,  G11C8/18

CPC分类号： G11C7/22 ,  G11C7/04 ,  G11C7/1048 ,  G11C7/12 ,  G11C7/20 ,  G11C7/222 ,  G11C11/4094 ,  H01L27/0207 ,  H01L27/108 ,  H01L27/10897 ,  H03K5/15066

摘要： Disclosed is a semiconductor device including a first clock generator that generates a first clock signal having a first period from an input clock signal, a second clock generator that generates a second clock signal having a second period from the input clock signal, and a timing generator that receives the first clock signal, the second clock signal, an activation signal from a command decoder and a selection signal for selecting the delay time from a timing register to produce a timing signal delayed as from activation of the activation signal by a delay equal to a sum of a time equal to a preset number m prescribed by the selection signal times the first period and a time equal to another preset number n prescribed by the selection signal times the second period. The timing register holds the values of m and n. These values are set in the timing register in an initialization sequence at the time of a mode register set command. In the operating states, the timing signals are output from the timing generator at a desired timing based on the information stored in the timing register (FIG. 6).

摘要翻译： 公开了一种半导体器件，包括第一时钟发生器，其从输入时钟信号产生具有第一周期的第一时钟信号;第二时钟发生器，其从输入时钟信号产生具有第二周期的第二时钟信号;以及定时发生器 其接收第一时钟信号，第二时钟信号，来自命令解码器的激活信号和用于从定时寄存器选择延迟时间的选择信号，以产生从激活信号的激活延迟等于 等于由选择信号规定的预定数量m的时间等于第一周期的时间和等于由选择信号规定的另一个预设数量n的时间乘以第二周期的时间之和。 定时寄存器保存m和n的值。 这些值在模式寄存器设置命令时以初始化顺序设置在定时寄存器中。 在操作状态下，基于定时寄存器（图6）中存储的信息，定时信号以定时发生器输出。

公开(公告)号：US07843250B2

公开(公告)日：2010-11-30

申请号：US12686430

申请日：2010-01-13

申请人： Hiroaki Nakaya ,  Satoru Akiyama ,  Tomonori Sekiguchi ,  Riichiro Takemura

发明人： Hiroaki Nakaya ,  Satoru Akiyama ,  Tomonori Sekiguchi ,  Riichiro Takemura

IPC分类号： H03K3/01

CPC分类号： G11C5/146 ,  G11C11/401 ,  G11C11/4074 ,  G11C29/02 ,  G11C29/026 ,  G11C29/028 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate voltage control technique that prevents the operating speed from being decreased and suppresses a leakage current due to a lower threshold voltage with respect to a low voltage use. Since a center value of the threshold voltages is detected by plural replica MOS transistors, and a substrate voltage is controlled to control a center value of the threshold voltages, thereby making it possible to satisfy a lower limit of the operating speed and an upper limit of a leakage current of the entire chip. On the other hand, the substrate voltage is dynamically controlled during the operation of the chip, thereby making it possible to decrease the center value of the threshold voltages when the chip operates to improve the speed, and to increase the center value of the threshold voltages after the operation of the chip to reduce the leakage current of the entire chip.

摘要翻译： 一种防止工作速度降低的基板电压控制技术，并且相对于低电压使用而抑制由于阈值电压较低导致的漏电流。 由于通过多个复制MOS晶体管检测阈值电压的中心值，并且控制衬底电压以控制阈值电压的中心值，从而可以满足操作速度的下限和上限 整个芯片的漏电流。 另一方面，在芯片工作期间动态地控制衬底电压，从而可以在芯片工作时降低阈值电压的中心值以提高速度，并且增加阈值电压的中心值 芯片运行后降低整个芯片的漏电流。

公开(公告)号：US07659769B2

公开(公告)日：2010-02-09

申请号：US11771779

申请日：2007-06-29

申请人： Hiroaki Nakaya ,  Satoru Akiyama ,  Tomonori Sekiguchi ,  Riichiro Takemura

发明人： Hiroaki Nakaya ,  Satoru Akiyama ,  Tomonori Sekiguchi ,  Riichiro Takemura

IPC分类号： G05F1/10

CPC分类号： G11C5/146 ,  G11C11/401 ,  G11C11/4074 ,  G11C29/02 ,  G11C29/026 ,  G11C29/028 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate voltage control technique that prevents the operating speed from being decreased and suppresses a leakage current due to a lower threshold voltage with respect to a low voltage use. Since a center value of the threshold voltages is detected by plural replica MOS transistors, and a substrate voltage is controlled to control a center value of the threshold voltages, thereby making it possible to satisfy a lower limit of the operating speed and an upper limit of a leakage current of the entire chip. On the other hand, the substrate voltage is dynamically controlled during the operation of the chip, thereby making it possible to decrease the center value of the threshold voltages when the chip operates to improve the speed, and to increase the center value of the threshold voltages after the operation of the chip to reduce the leakage current of the entire chip.

公开(公告)号：US20090102524A1

公开(公告)日：2009-04-23

申请号：US12208978

申请日：2008-09-11

申请人： Akira Ide ,  Yasuhiro Takai ,  Tomonori Sekiguchi ,  Riichiro Takemura ,  Satoru Akiyama ,  Hiroaki Nakaya

发明人： Akira Ide ,  Yasuhiro Takai ,  Tomonori Sekiguchi ,  Riichiro Takemura ,  Satoru Akiyama ,  Hiroaki Nakaya

IPC分类号： H03L7/00

CPC分类号： H03K5/135 ,  G11C7/04 ,  G11C7/1072 ,  G11C7/222 ,  G11C11/4076 ,  G11C19/00

摘要： Disclosed is a timing control circuit that receives a first clock having a period T1, a group of second clocks of L different phases spaced apart from each other at substantially equal intervals and selection signals m, n supplied thereto and generates a fine timing signal delayed from the rising edge of the first clock signal by a delay td of approximately td=m·T1+n·(T2/L). The timing control circuit includes a coarse delay circuit and a fine delay circuit. The coarse delay circuit includes a counter for counting a rising edge of the first clock signal after an activate signal is activated and generates a coarse timing signal whose amount of delay from the first clock signal is approximately m·T1. The fine delay circuit comprises L-number of multiphase clock control delay circuits disposed in parallel, delays by n·T2/L the timing of sampling of the coarse timing signal by respective clocks of the group of L-phase second clocks, and takes the OR among the resulting delayed pulses to thereby produce the fine timing signal.

摘要翻译： 公开了一种定时控制电路，其接收具有周期T1的第一时钟，以相等间隔彼此间隔开的L个不同相位的一组第二时钟，以及提供给其的选择信号m，n，并产生从 第一时钟信号的上升沿大约为td = m.T1 + n。（T2 / L）的延迟td。 定时控制电路包括粗延迟电路和精细延迟电路。 粗延迟电路包括用于在激活信号被激活之后对第一时钟信号的上升沿进行计数的计数器，并产生其第一时钟信号的延迟量近似为m.T1的粗定时信号。 精细延迟电路包括并联设置的L个多相时钟控制延迟电路，延迟n.T2 / L，通过L相第二时钟组的相应时钟对粗略定时信号进行采样的定时， 或者产生延迟脉冲，从而产生精细定时信号。