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    METHOD FOR PRODUCING AN L-AMINO ACID
    3.
    发明申请
    METHOD FOR PRODUCING AN L-AMINO ACID 审中-公开
    生产L-氨基酸的方法

    公开(公告)号：US20120040415A1

    公开(公告)日：2012-02-16

    申请号：US13170661

    申请日：2011-06-28

    申请人： Yuichi Nakahara ,  Yusuke Hagiwara ,  Yuri Nagai ,  Takuji Ueda ,  Kazuyuki Hayashi ,  Yuki Yano

    发明人： Yuichi Nakahara ,  Yusuke Hagiwara ,  Yuri Nagai ,  Takuji Ueda ,  Kazuyuki Hayashi ,  Yuki Yano

    IPC分类号： C12P13/08 ,  C12P13/04

    CPC分类号： C12P13/08 ,  C12P13/04

    摘要： A method is provided for producing an L-amino acid which includes the steps of culturing a bacterium, which belongs to the family Enterobacteriaceae and is able to produce an L-amino acid, in a medium containing glycerol as a carbon source to produce and accumulate an L-amino acid in the medium, and collecting the L-amino acid from the culture. The culture is performed as a fed-batch culture or a continuous culture, and a feed medium containing glycerol is added to the fermentation medium so that the glycerol concentration in the fermentation medium is 5 g/L or higher.

    摘要翻译： 提供了一种生产L-氨基酸的方法，其包括在含有甘油作为碳源的培养基中培养属于肠杆菌科并能够产生L-氨基酸的细菌以产生和积累的步骤 培养基中的L-氨基酸，并从培养物中收集L-氨基酸。 作为补料分批培养或连续培养进行培养，向发酵培养基中添加含有甘油的饲料培养基，发酵培养基中的甘油浓度为5g / L以上。

    Reflective mask blank for EUV lithography
    4.
    发明授权
    Reflective mask blank for EUV lithography 有权
    EUV光刻用反光罩

    公开(公告)号：US08029950B2

    公开(公告)日：2011-10-04

    申请号：US12855053

    申请日：2010-08-12

    申请人： Kazuyuki Hayashi ,  Toshiyuki Uno ,  Ken Ebihara

    发明人： Kazuyuki Hayashi ,  Toshiyuki Uno ,  Ken Ebihara

    IPC分类号： G03F1/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00

    摘要： A reflective mask blank for EUV lithography is provided which has an absorber layer wherein stress and crystal structure can be easily controlled.A reflective mask blank for EUV lithography, which comprises a substrate, and at least a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), nitrogen (N) and hydrogen (H); and in the absorber layer, the total content of Ta and N is from 50 to 99.9 at %, and the content of H is from 0.1 to 50 at %.

    摘要翻译： 提供了用于EUV光刻的反射掩模板，其具有可以容易地控制应力和晶体结构的吸收层。 一种用于EUV光刻的反射掩模板，其包括衬底，以及用于反射EUV光的至少反射层和用于吸收在衬底上依次形成的EUV光的吸收层，其中吸收层包含钽（Ta），氮 （N）和氢（H）; 在吸收层中，Ta和N的总含量为50〜99.9原子％，H的含量为0.1〜50原子％。

    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY
    5.
    发明申请
    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY 有权
    反射掩蔽空白用于EUV LITHOGRAPHY

    公开(公告)号：US20100304283A1

    公开(公告)日：2010-12-02

    申请号：US12855053

    申请日：2010-08-12

    申请人： Kazuyuki Hayashi ,  Toshiyuki Uno ,  Ken Ebihara

    发明人： Kazuyuki Hayashi ,  Toshiyuki Uno ,  Ken Ebihara

    IPC分类号： G03F1/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00

    摘要： A reflective mask blank for EUV lithography is provided which has an absorber layer wherein stress and crystal structure can be easily controlled.A reflective mask blank for EUV lithography, which comprises a substrate, and at least a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), nitrogen (N) and hydrogen (H); and in the absorber layer, the total content of Ta and N is from 50 to 99.9 at %, and the content of H is from 0.1 to 50 at %.

    摘要翻译： 提供了用于EUV光刻的反射掩模板，其具有可以容易地控制应力和晶体结构的吸收层。 一种用于EUV光刻的反射掩模板，其包括衬底，以及用于反射EUV光的至少反射层和用于吸收在衬底上依次形成的EUV光的吸收层，其中吸收层包含钽（Ta），氮 （N）和氢（H）; 在吸收层中，Ta和N的总含量为50〜99.9原子％，H的含量为0.1〜50原子％。

    Soft magnetic material, powder magnetic core and method of manufacturing soft magnetic material
    6.
    发明授权
    Soft magnetic material, powder magnetic core and method of manufacturing soft magnetic material 有权
    软磁材料，粉末磁芯和软磁材料的制造方法

    公开(公告)号：US07767034B2

    公开(公告)日：2010-08-03

    申请号：US11629976

    申请日：2005-09-29

    申请人： Toru Maeda ,  Naoto Igarashi ,  Haruhisa Toyoda ,  Hirokazu Kugai ,  Kazuyuki Hayashi ,  Hiroko Morii ,  Seiji Ishitani

    发明人： Toru Maeda ,  Naoto Igarashi ,  Haruhisa Toyoda ,  Hirokazu Kugai ,  Kazuyuki Hayashi ,  Hiroko Morii ,  Seiji Ishitani

    IPC分类号： H01F1/20 ,  H01F1/24 ,  B32B5/00

    CPC分类号： B22F1/02 ,  B22F2998/10 ,  H01F1/24 ,  H01F1/26 ,  H01F41/0246 ,  Y10T428/2991 ,  B22F3/02 ,  B22F3/24

    摘要： A soft magnetic material is a soft magnetic material including a composite magnetic particle (30) having a metal magnetic particle (10) mainly composed of Fe and an insulating coating (20) covering metal magnetic particle (10), and insulating coating (20) contains an iron phosphate compound and an aluminum phosphate compound. The atomic ratio of Fe contained in a contact surface of insulating coating (20) in contact with metal magnetic particle (10) is larger than the atomic ratio of Fe contained in the surface of insulating coating (20). The atomic ratio of Al contained in the contact surface of insulating coating (20) in contact with metal magnetic particle (10) is smaller than the atomic ratio of Al contained in the surface of insulating coating (20). Thus, iron loss can be reduced.

    摘要翻译： 软磁性材料是包括具有主要由Fe构成的金属磁性粒子（10）和覆盖金属磁性粒子（10）的绝缘涂层（20）的复合磁性体（30）和绝缘涂层（20）的软磁性材料， 含有磷酸铁化合物和磷酸铝化合物。 包含在与金属磁性颗粒（10）接触的绝缘涂层（20）的接触表面中的Fe的原子比大于绝缘涂层（20）表面中所含的Fe的原子比。 绝缘涂层（20）与金属磁性颗粒（10）接触的接触表面中所含的Al的原子比小于绝缘涂层（20）表面中的Al的原子比。 因此，可以减少铁损。

    Reflective mask blank for EUV lithography and substrate with a conductive film for the mask blank
    7.
    发明授权
    Reflective mask blank for EUV lithography and substrate with a conductive film for the mask blank 有权
    用于EUV光刻的反射掩模板和用于掩模板的导电膜的基板

    公开(公告)号：US07736821B2

    公开(公告)日：2010-06-15

    申请号：US11566883

    申请日：2006-12-05

    申请人： Kazuyuki Hayashi ,  Takashi Sugiyama ,  Masaki Mikami

    发明人： Kazuyuki Hayashi ,  Takashi Sugiyama ,  Masaki Mikami

    IPC分类号： G03F1/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/38 ,  G21K2201/067 ,  Y10T428/31616

    摘要： To provide a substrate with a conductive film for an EUV mask blank having an increased surface hardness, and a substrate with a reflective multilayer film and an EUV mask blank using such a substrate with a conductive film.A substrate with a conductive film to be used for production of a reflective mask blank for EUV lithography, characterized in that the chief material of the conductive film is at least one member selected from the group consisting of Cr, Ti, Zr, Nb, Ni and V, and the conductive film contains B (boron) at an average concentration of from 1 to 70 at %.

    摘要翻译： 为了提供具有增加表面硬度的EUV掩模坯料用导电膜的基板，以及使用这种具有导电膜的基板的具有反射多层膜的基板和EUV掩模坯料。 一种具有用于生产用于EUV光刻的反射掩模板的导电膜的基板，其特征在于，导电膜的主要材料是选自Cr，Ti，Zr，Nb，Ni中的至少一种 和V，导电膜含有平均浓度为1-70原子％的B（硼）。

    Reflective mask blank for EUV lithography
    8.
    发明授权
    Reflective mask blank for EUV lithography 失效
    EUV光刻用反光罩

    公开(公告)号：US07713666B2

    公开(公告)日：2010-05-11

    申请号：US12027680

    申请日：2008-02-07

    申请人： Kazuyuki Hayashi ,  Kazuo Kadowaki ,  Takashi Sugiyama

    发明人： Kazuyuki Hayashi ,  Kazuo Kadowaki ,  Takashi Sugiyama

    IPC分类号： G03F1/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/54

    摘要： To provide a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in a wavelength region of EUV light or light for inspection of a pattern and which is easy to control to have a desired layer composition and thickness.A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %.

    摘要翻译： 为了提供EUV光刻用的反射掩模板，其具有在EUV光或光的波长区域具有低反射率的吸收层，用于检查图案，并且易于控制以具有期望的层组成和厚度。 用于EUV光刻的反射掩模板，其包括基板，以及反射层，用于反射EUV光和吸收层，以吸收在基板上依次形成的EUV光，其中吸收层包含钽（Ta）和铪（ Hf），并且在吸收层中，Hf的含量为20〜60at。 ％，Ta的含量为40〜80。 ％。

    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND SUBSTRATE WITH FUNCTIONAL FILM FOR THE SAME
    10.
    发明申请
    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND SUBSTRATE WITH FUNCTIONAL FILM FOR THE SAME 有权
    用于EUV光刻的反射掩膜和具有相同功能膜的基板

    公开(公告)号：US20080318140A1

    公开(公告)日：2008-12-25

    申请号：US12198912

    申请日：2008-08-27

    申请人： Kazuyuki Hayashi ,  Kazuo Kadowaki ,  Takashi Sugiyama ,  Masaki Mikami

    发明人： Kazuyuki Hayashi ,  Kazuo Kadowaki ,  Takashi Sugiyama ,  Masaki Mikami

    IPC分类号： G03F1/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/22 ,  G21K1/062

    摘要： To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank.A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.

    摘要翻译： 提供抑制EUV曝光期间反射率降低的EUV掩模空白，以及用于制造这种EUV掩模空白的具有功能膜的基板。 具有用于EUV光刻的反射层的衬底，包括衬底和用于反射EUV光的反射层和用于保护在衬底上依次形成的反射层的保护层，其中保护层包含钌（Ru）并且在 选自硼（B）和锆（Zr）的至少一种元素; 并且在保护层中，Ru含量为70原子％至95原子％，B和Zr的总含量为5原子％至30原子％。