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131 条记录 (耗时 0.041 秒)

    Method of manufacturing semiconductor devices
    1.
    发明授权
    Method of manufacturing semiconductor devices 失效
    制造半导体器件的方法

    公开(公告)号：US5840200A

    公开(公告)日：1998-11-24

    申请号：US788310

    申请日：1997-01-24

    申请人： Satoshi Nakagawa ,  Toyoji Ito ,  Yoji Bito ,  Yoshihisa Nagano

    发明人： Satoshi Nakagawa ,  Toyoji Ito ,  Yoji Bito ,  Yoshihisa Nagano

    IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/302

    CPC分类号： H01L28/55 ,  H01L21/31122 ,  H01L21/32136

    摘要： A device insulating film, a lower-layer platinum film, a ferroelectric film, an upper-layer platinum film, and a titanium film are sequentially formed on a semiconductor substrate in this order. On the titanium film, a photoresist mask is further formed in a desired pattern. The thickness of the titanium film is adjusted to be 1/10 or more of the total thickness of a multilayer film consisting of the upper-layer platinum film, the ferroelectric film, and the lower-layer platinum film. The titanium film is then subjected to dry etching and the photoresist film is removed by ashing process. The titanium film thus patterned is used as a mask in etching the upper-layer platinum film, the ferroelectric film, and the lower-layer platinum film by a dry-etching method using a plasma of a gas mixture of chlorine and oxygen in which the volume concentration of oxygen gas is adjusted to be 40%. During the dry-etching process, the titanium film is oxidized to provide a high etching selectivity. Subsequently, the titanium film is removed by dry etching using a plasma of chlorine gas.

    摘要翻译： 依次在半导体衬底上依次形成器件绝缘膜，下层铂膜，铁电体膜，上层铂膜和钛膜。 在钛膜上，以期望的图案进一步形成光致抗蚀剂掩模。 将钛膜的厚度调节为由上层铂膜，铁电体膜和下层铂膜构成的多层膜的总厚度的+ E，fra 1/10 + EE以上。 然后对钛膜进行干蚀刻，并通过灰化处理去除光致抗蚀剂膜。 通过使用氯气和氧气的混合气体的等离子体的干蚀刻方法，将如此构图的钛膜用作蚀刻上层铂膜，铁电体膜和下层铂膜的掩模，其中 氧气体积浓度调整为40％。 在干蚀刻工艺期间，钛膜被氧化以提供高蚀刻选择性。 随后，使用氯气等离子体通过干蚀刻除去钛膜。

    Apparatus and method for manufacturing semiconductor device
    2.
    发明授权
    Apparatus and method for manufacturing semiconductor device 失效
    半导体器件制造装置及方法

    公开(公告)号：US5989929A

    公开(公告)日：1999-11-23

    申请号：US119588

    申请日：1998-07-21

    申请人： Hideo Nikoh ,  Shinichi Imai ,  Nobuhiro Jiwari ,  Satoshi Nakagawa ,  Shoji Matsumoto ,  Yoji Bito

    发明人： Hideo Nikoh ,  Shinichi Imai ,  Nobuhiro Jiwari ,  Satoshi Nakagawa ,  Shoji Matsumoto ,  Yoji Bito

    IPC分类号： H01J37/32 ,  H01L21/00

    CPC分类号： H01L21/67253 ,  H01J37/321 ,  H01J37/32422 ,  H01J37/32467 ,  H01J37/32871 ,  H01J37/3299 ,  H01L21/67069 ,  H01L21/67248

    摘要： A reactor is composed of a lower frame of a chamber, a quartz dome, an upper electrode, an 0 ring, and the like. A lower electrode and a substrate as a workpiece to be processed thereon are disposed in the reactor. The temperature of the quartz dome is maintained at a temperature of 180.degree. C. or higher by means of a heater. Fluorocarbon gas such as C.sub.2 F.sub.6 gas or C.sub.4 F.sub.8 gas is introduced into the reactor through a gas inlet and RF power from a first RF power source is applied to an antenna coil to produce a plasma and thereby etch an oxide film on the substrate. By heating the quartz dome to a high temperature, a deposit which hinders the release of oxygen from a wall face is prevented from being attached and the deposit on the bottom of the hole which causes an etch stop during processing is removed with oxygen. This prevents the etch stop during an etching process for forming a deep hole.

    摘要翻译： 反应器由室的下框架，石英圆顶，上电极，O形环等构成。 作为待加工的工件的下电极和基板设置在反应器中。 通过加热器将石英圆顶的温度保持在180℃或更高的温度。 将碳氟化合物气体如C 2 F 6气体或C 4 F 8气体通过气体入口引入反应器中，并且将来自第一RF电源的RF功率施加到天线线圈以产生等离子体，从而蚀刻衬底上的氧化物膜。 通过将石英圆顶加热到高温，防止阻碍氧从壁面释放的沉积物被附着，并且用氧气除去在加工过程中导致蚀刻停止的孔的沉积物。 这防止了在用于形成深孔的蚀刻工艺期间的蚀刻停止。

    Process for producing (meth) acrylic acid
    3.
    发明授权
    Process for producing (meth) acrylic acid 有权
    （甲基）丙烯酸的制造方法

    公开(公告)号：US08680330B2

    公开(公告)日：2014-03-25

    申请号：US13147643

    申请日：2010-01-29

    申请人： Kazuhiko Sakamoto ,  Koji Ueno ,  Yoshitake Ishii ,  Takashi Sugimoto ,  Masatsugu Kitaura ,  Satoshi Nakagawa ,  Kunihiko Suzuki

    发明人： Kazuhiko Sakamoto ,  Koji Ueno ,  Yoshitake Ishii ,  Takashi Sugimoto ,  Masatsugu Kitaura ,  Satoshi Nakagawa ,  Kunihiko Suzuki

    IPC分类号： C07C51/42

    CPC分类号： C07C51/43 ,  C07C57/04

    摘要： A process for producing (meth)acrylic acid of the present invention comprises the steps in the following order: a crystallization step of supplying a cooling medium cooled by a heat source device to a crystallizer to obtain a (meth)acrylic acid crystal from a crude (meth)acrylic acid solution; an adjustment step of returning the cooling medium discharged from the crystallizer to the crystallizer without cooling; a sweating step of supplying a heating medium to the crystallizer to partially melt the (meth)acrylic acid crystal, thereby obtaining a melted liquid, and discharging the melted liquid from the crystallizer; and a melting step of supplying the heating medium to the crystallizer to melt the (meth)acrylic acid crystal, thereby obtaining purified (meth)acrylic acid. According to the present invention, purified (meth)acrylic acid with high purity can be obtained.

    摘要翻译： 制备本发明的（甲基）丙烯酸的方法包括以下顺序的步骤：将由热源装置冷却的冷却介质供给结晶器的结晶步骤，从粗制得到（甲基）丙烯酸晶体 （甲基）丙烯酸溶液; 将结晶器排出的冷却介质返回到结晶器而不冷却的调整步骤; 向所述结晶器供给加热介质以部分熔融所述（甲基）丙烯酸晶体，从而获得熔融液体并从所述结晶器排出熔融液体的出汗步骤; 以及将加热介质供给结晶器以熔融（甲基）丙烯酸晶体，从而获得纯化的（甲基）丙烯酸的熔融步骤。 根据本发明，可以得到高纯度的（甲基）丙烯酸。

    PROCESS FOR PRODUCING (METH) ACRYLIC ACID
    4.
    发明申请
    PROCESS FOR PRODUCING (METH) ACRYLIC ACID 有权
    生产（甲基）丙烯酸的方法

    公开(公告)号：US20110319661A1

    公开(公告)日：2011-12-29

    申请号：US13147643

    申请日：2010-01-29

    申请人： Kazuhiko Sakamoto ,  Koji Ueno ,  Yoshitake Ishii ,  Takashi Sugimoto ,  Masatsugu Kitaura ,  Satoshi Nakagawa ,  Kunihiko Suzuki

    发明人： Kazuhiko Sakamoto ,  Koji Ueno ,  Yoshitake Ishii ,  Takashi Sugimoto ,  Masatsugu Kitaura ,  Satoshi Nakagawa ,  Kunihiko Suzuki

    IPC分类号： C07C51/43

    CPC分类号： C07C51/43 ,  C07C57/04

    摘要： A process for producing (meth)acrylic acid of the present invention comprises the steps in the following order: a crystallization step of supplying a cooling medium cooled by a heat source device to a crystallizer to obtain a (meth)acrylic acid crystal from a crude (meth)acrylic acid solution; an adjustment step of returning the cooling medium discharged from the crystallizer to the crystallizer without cooling; a sweating step of supplying a heating medium to the crystallizer to partially melt the (meth)acrylic acid crystal, thereby obtaining a melted liquid, and discharging the melted liquid from the crystallizer; and a melting step of supplying the heating medium to the crystallizer to melt the (meth)acrylic acid crystal, thereby obtaining purified (meth)acrylic acid. According to the present invention, purified (meth)acrylic acid with high purity can be obtained.

    摘要翻译： 制备本发明的（甲基）丙烯酸的方法包括以下顺序的步骤：将由热源装置冷却的冷却介质供给结晶器的结晶步骤，从粗制得到（甲基）丙烯酸晶体 （甲基）丙烯酸溶液; 将结晶器排出的冷却介质返回结晶器而不冷却的调整步骤; 向所述结晶器供给加热介质以部分熔融所述（甲基）丙烯酸晶体，从而获得熔融液体并从所述结晶器排出熔融液体的出汗步骤; 以及将加热介质供给结晶器以熔融（甲基）丙烯酸晶体，从而获得纯化的（甲基）丙烯酸的熔融步骤。 根据本发明，可以得到高纯度的（甲基）丙烯酸。

    Method of producing sugar chain using human G4 polypeptide
    5.
    发明授权
    Method of producing sugar chain using human G4 polypeptide 有权
    使用人G4多肽生产糖链的方法

    公开(公告)号：US07972815B2

    公开(公告)日：2011-07-05

    申请号：US12019793

    申请日：2008-01-25

    申请人： Katsutoshi Sasaki ,  Norihiko Shiraishi ,  Ayumi Natsume ,  Yoji Yamada ,  Satoshi Nakagawa ,  Susume Sekine

    发明人： Katsutoshi Sasaki ,  Norihiko Shiraishi ,  Ayumi Natsume ,  Yoji Yamada ,  Satoshi Nakagawa ,  Susume Sekine

    IPC分类号： C12P19/26 ,  C12P19/18 ,  C12N9/10

    CPC分类号： C12N9/1051 ,  A61K38/00 ,  C07K2319/02 ,  C12N9/1085

    摘要： The present invention provides a novel polypeptide having a β1,3-N-acetylglucosaminyl transferase activity; a method for producing the polypeptide; a DNA which encodes the polypeptide; a recombinant vector into which the DNA is inserted; a transformant comprising the recombinant vector; a method for producing a sugar chain or complex carbohydrate, using the polypeptide; a method for producing a sugar chain or complex carbohydrate, using the transformant; an antibody which recognizes the polypeptide; a method for screening a substance which changes the expression of the gene which encodes the polypeptide; and a method for screening a substance which changes the activity of the polypeptide.

    摘要翻译： 本发明提供了具有“1,3-N-乙酰氨基葡糖基转移酶活性”的新型多肽; 一种生产该多肽的方法; 编码多肽的DNA; 插入DNA的重组载体; 包含重组载体的转化体; 使用该多肽制备糖链或复合碳水化合物的方法; 使用该转化体生产糖链或复合碳水化合物的方法; 识别多肽的抗体; 用于筛选改变编码多肽的基因表达的物质的方法; 以及筛选改变多肽活性的物质的方法。

    Operation management system
    8.
    发明申请
    Operation management system 审中-公开
    运行管理系统

    公开(公告)号：US20070165624A1

    公开(公告)日：2007-07-19

    申请号：US11451368

    申请日：2006-06-13

    申请人： Hiroshi Saito ,  Yukio Ogawa ,  Yuji Kimura ,  Toshikazu Yasue ,  Satoshi Nakagawa

    发明人： Hiroshi Saito ,  Yukio Ogawa ,  Yuji Kimura ,  Toshikazu Yasue ,  Satoshi Nakagawa

    IPC分类号： H04L12/56 ,  H04L12/28

    CPC分类号： H04L43/50

    摘要： In a network system, which has a first computer belonging to a first network, a second computer belonging to a second network, and a first router and a second router belonging to a third network, wherein the first computer and the second computer are connected through a logical path built between the first router and the second router, wherein the first, second and third network are connected to one another, wherein the first and second network and the third network are independently operated; the first router stores as its first address an address used by the first network but not used by the first computer, or an address used by the second network but not used by the second computer and, based on the first address, sends a first packet and receives a second packet corresponding to the first packet.

    摘要翻译： 在具有属于第一网络的第一计算机，属于第二网络的第二计算机以及属于第三网络的第一路由器和第二路由器的网络系统中，其中所述第一计算机和所述第二计算机通过 构建在所述第一路由器和所述第二路由器之间的逻辑路径，其中所述第一，第二和第三网络彼此连接，其中所述第一和第二网络和所述第三网络被独立地操作; 第一路由器将其第一地址作为第一网络使用但不被第一计算机使用的地址或由第二网络使用但不被第二计算机使用的地址存储，并且基于第一地址，发送第一分组 并接收对应于第一分组的第二分组。