公开(公告)号：US5989929A

公开(公告)日：1999-11-23

申请号：US119588

申请日：1998-07-21

申请人： Hideo Nikoh ,  Shinichi Imai ,  Nobuhiro Jiwari ,  Satoshi Nakagawa ,  Shoji Matsumoto ,  Yoji Bito

发明人： Hideo Nikoh ,  Shinichi Imai ,  Nobuhiro Jiwari ,  Satoshi Nakagawa ,  Shoji Matsumoto ,  Yoji Bito

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01L21/67253 ,  H01J37/321 ,  H01J37/32422 ,  H01J37/32467 ,  H01J37/32871 ,  H01J37/3299 ,  H01L21/67069 ,  H01L21/67248

摘要： A reactor is composed of a lower frame of a chamber, a quartz dome, an upper electrode, an 0 ring, and the like. A lower electrode and a substrate as a workpiece to be processed thereon are disposed in the reactor. The temperature of the quartz dome is maintained at a temperature of 180.degree. C. or higher by means of a heater. Fluorocarbon gas such as C.sub.2 F.sub.6 gas or C.sub.4 F.sub.8 gas is introduced into the reactor through a gas inlet and RF power from a first RF power source is applied to an antenna coil to produce a plasma and thereby etch an oxide film on the substrate. By heating the quartz dome to a high temperature, a deposit which hinders the release of oxygen from a wall face is prevented from being attached and the deposit on the bottom of the hole which causes an etch stop during processing is removed with oxygen. This prevents the etch stop during an etching process for forming a deep hole.

摘要翻译： 反应器由室的下框架，石英圆顶，上电极，O形环等构成。 作为待加工的工件的下电极和基板设置在反应器中。 通过加热器将石英圆顶的温度保持在180℃或更高的温度。 将碳氟化合物气体如C 2 F 6气体或C 4 F 8气体通过气体入口引入反应器中，并且将来自第一RF电源的RF功率施加到天线线圈以产生等离子体，从而蚀刻衬底上的氧化物膜。 通过将石英圆顶加热到高温，防止阻碍氧从壁面释放的沉积物被附着，并且用氧气除去在加工过程中导致蚀刻停止的孔的沉积物。 这防止了在用于形成深孔的蚀刻工艺期间的蚀刻停止。

公开(公告)号：US06214740B1

公开(公告)日：2001-04-10

申请号：US09051815

申请日：1998-04-16

申请人： Shinichi Imai ,  Hideo Nikoh ,  Nobuhiro Jiwari

发明人： Shinichi Imai ,  Hideo Nikoh ,  Nobuhiro Jiwari

IPC分类号： H01L21461

CPC分类号： H01L21/67069 ,  H01L21/3065

摘要： A manufacturing apparatus for semiconductor devices comprises as a halogen scavenger a silicon ring (12) having an average surface roughness of 1-1000 &mgr;m, arranged around a silicon substrate (6) on a lower electrode (3) in a reaction chamber (7); and an upper silicon element (5) as another halogen scavenger, having an average surface roughness of 1-1000 &mgr;m, arranged above the silicon substrate (6). In this apparatus, C2F6 is used as a gas to be introduced into the chamber (7) and fluorine can be effectively scavenged in the initial phase of operation, so that semiconductor devices can be aged faster than in conventional apparatus.

摘要翻译： 半导体器件的制造装置包括作为卤素清除剂的平均表面粗糙度为1-1000μm的硅环（12），其布置在反应室（7）中的下电极（3）上的硅衬底（6）周围， ; 和作为另一个卤素清除剂的上硅元件（5），其平均表面粗糙度为1-1000μm，设置在硅衬底（6）的上方。 在该装置中，C2F6用作被引入到室（7）中的气体，并且在初始操作阶段可以有效地清除氟，使得半导体器件的老化速度可以比传统的设备快。

公开(公告)号：US06703711B2

公开(公告)日：2004-03-09

申请号：US10330152

申请日：2002-12-30

申请人： Nobuhiro Jiwari ,  Shinichi Imai

发明人： Nobuhiro Jiwari ,  Shinichi Imai

IPC分类号： H01L2348

CPC分类号： H01L21/0212 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3127

摘要： A fluorine-containing organic film having a relative dielectric constant of 4 or less is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. During the deposition of the fluorine-containing organic film, a scavenger gas for scavenging fluorine constituting the fluorocarbon is mixed in the material gas. The proportion of the mixed scavenger gas in the material gas is changed to adjust the mechanical strength and relative dielectric constant of the fluorine-containing organic film.

摘要翻译： 在等离子体处理装置的反应室中，使用含有碳氟化合物作为主要成分的原料气体，在半导体基板上沉积相对介电常数为4以下的含氟有机膜。 在含氟有机膜的沉积期间，在构成氟碳的氟中除去清除剂气体在原料气体中混合。 改变材料气体中混合的清除气体的比例，以调节含氟有机膜的机械强度和相对介电常数。

公开(公告)号：US06856020B2

公开(公告)日：2005-02-15

申请号：US10255597

申请日：2002-09-27

申请人： Nobuhiro Jiwari ,  Shinichi Imai

发明人： Nobuhiro Jiwari ,  Shinichi Imai

IPC分类号： H01L21/768 ,  H01L21/31 ,  H01L21/312 ,  H01L21/4763 ,  H01L23/522 ,  H01L23/48

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/7682 ,  Y02C20/30 ,  Y02P70/605

摘要： A plurality of metal interconnections are formed on a semiconductor substrate. The semiconductor substrate is held on a sample stage in a reactor chamber of a plasma processing apparatus and a material gas containing C5F8, C3F6, or C4F6 as a main component is introduced into the reactor chamber, so that a first fluorine-containing organic film having cavities at positions between the metal interconnections is deposited between the metal interconnections and on the top surfaces of the metal interconnections.

摘要翻译： 多个金属互连形成在半导体衬底上。 将半导体基板保持在等离子体处理装置的反应室中的样品台上，将含有作为主要成分的C5F8，C3F6或C4F6的原料气体引入到反应室中，从而使第一含氟有机膜具有 在金属互连之间的位置处的空腔沉积在金属互连之间和金属互连的顶表面上。

公开(公告)号：US06518169B1

公开(公告)日：2003-02-11

申请号：US09708082

申请日：2000-11-08

申请人： Nobuhiro Jiwari ,  Shinichi Imai

发明人： Nobuhiro Jiwari ,  Shinichi Imai

IPC分类号： H01L214763

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/7682 ,  Y02C20/30 ,  Y02P70/605

摘要： A plurality of metal interconnections are formed on a semiconductor substrate. The semiconductor substrate is held on a sample stage in a reactor chamber of a plasma processing apparatus and a material gas containing C5F8, C3F6, or C4F6 as a main component is introduced into the reactor chamber, so that a first fluorine-containing organic film having cavities at positions between the metal interconnections is deposited between the metal interconnections and on the top surfaces of the metal interconnections.

摘要翻译： 多个金属互连形成在半导体衬底上。 将半导体基板保持在等离子体处理装置的反应室中的样品台上，将含有作为主要成分的C5F8，C3F6或C4F6的原料气体引入到反应室中，从而使第一含氟有机膜具有 在金属互连之间的位置处的空腔沉积在金属互连之间和金属互连的顶表面上。

公开(公告)号：US06251216B1

公开(公告)日：2001-06-26

申请号：US09212411

申请日：1998-12-16

申请人： Hideaki Okamura ,  Shinichi Imai ,  Nobuhiro Jiwari ,  Yoko Tohmori

发明人： Hideaki Okamura ,  Shinichi Imai ,  Nobuhiro Jiwari ,  Yoko Tohmori

IPC分类号： H05H100

CPC分类号： H01J37/32477 ,  H01J37/3244 ,  H01J37/32559 ,  Y10S156/916

摘要： A plasma processing apparatus includes a reaction chamber in which plasma is generated from a reactive gas introduced thereto and a film on a substrate is processed with the plasma generated. The main members of the reaction chamber are covered with protective members made of synthetic quartz.

摘要翻译： 等离子体处理装置包括反应室，其中从引入到其中的反应气体产生等离子体，并且在所产生的等离子体中处理基板上的膜。 反应室的主要部件被合成石英制成的保护构件覆盖。

公开(公告)号：US06787445B1

公开(公告)日：2004-09-07

申请号：US09708085

申请日：2000-11-08

申请人： Nobuhiro Jiwari ,  Shinichi Imai

发明人： Nobuhiro Jiwari ,  Shinichi Imai

IPC分类号： H01L214763

CPC分类号： H01L21/0212 ,  H01L21/02274 ,  H01L21/3127 ,  H01L21/76801

摘要： A fluorine-containing organic film is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. The fluorine-containing organic film is then exposed to plasma of a rare gas in the same reactor chamber to densify the fluorine-containing organic film.

摘要翻译： 在等离子体处理装置的反应室中，使用含有碳氟化合物作为主要成分的原料气体，在半导体基板上沉积含氟有机膜。 然后将含氟有机膜在同一反应器室中暴露于稀有气体的等离子体，以使含氟有机膜致密化。

公开(公告)号：US06500769B1

公开(公告)日：2002-12-31

申请号：US09708084

申请日：2000-11-08

申请人： Nobuhiro Jiwari ,  Shinichi Imai

发明人： Nobuhiro Jiwari ,  Shinichi Imai

IPC分类号： H01L2131

CPC分类号： H01L21/0212 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3127

摘要： A fluorine-containing organic film having a relative dielectric constant of 4 or less is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. During the deposition of the fluorine-containing organic film, a scavenger gas for scavenging fluorine constituting the fluorocarbon is mixed in the material gas. The proportion of the mixed scavenger gas in the material gas is changed to adjust the mechanical strength and relative dielectric constant of the fluorine-containing organic film.

摘要翻译： 在等离子体处理装置的反应室中，使用含有碳氟化合物作为主要成分的原料气体，在半导体基板上沉积相对介电常数为4以下的含氟有机膜。 在含氟有机膜的沉积期间，在构成氟碳的氟中除去清除剂气体在原料气体中混合。 改变材料气体中混合的清除气体的比例，以调节含氟有机膜的机械强度和相对介电常数。

公开(公告)号：US6069092A

公开(公告)日：2000-05-30

申请号：US178431

申请日：1998-10-26

申请人： Shinichi Imai ,  Nobuhiro Jiwari

发明人： Shinichi Imai ,  Nobuhiro Jiwari

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116

摘要： The present invention discloses a dry etching method using a high density plasma, in which a fluorocarbon gas, whose fluorine to carbon ratio is less than 2:1, is used. Such arrangement provides improved etching selectivity ratios to the resist film. The adding of an inert gas and oxygen to such a fluorocarbon gas provides further improved etching selectivity ratios and improved etching rates.

摘要翻译： 本发明公开了一种使用高密度等离子体的干蚀刻方法，其中使用氟碳比小于2:1的碳氟化合物气体。 这种布置提供了与抗蚀剂膜的改进的蚀刻选择比。 将惰性气体和氧气添加到这种碳氟化合物气体中提供了进一步改进的蚀刻选择比和改进的蚀刻速率。

公开(公告)号：US6057247A

公开(公告)日：2000-05-02

申请号：US179936

申请日：1998-10-28

申请人： Shinichi Imai ,  Nobuhiro Jiwari

发明人： Shinichi Imai ,  Nobuhiro Jiwari

IPC分类号： H01L21/311 ,  H01L21/00

CPC分类号： H01J37/32862 ,  H01J37/321 ,  H01L21/31116

摘要： A method for fabricating a semiconductor device according to the present invention includes the steps of: forming an oxide film on a substrate having a silicon region at least on the surface thereof; defining a resist pattern on the oxide film; placing the substrate on an electrode provided inside a reaction chamber of a plasma etching apparatus, and etching the oxide film by using plasma generated from a gas including a fluorocarbon gas with a bias voltage applied to the substrate; and removing fluorine from the reaction chamber by generating oxygen plasma inside the reaction chamber with substantially no bias voltage applied to the substrate.

摘要翻译： 根据本发明的制造半导体器件的方法包括以下步骤：至少在其表面上在具有硅区域的衬底上形成氧化膜; 在氧化膜上限定抗蚀剂图案; 将基板放置在设置在等离子体蚀刻装置的反应室内部的电极上，并且通过使用由包含施加到基板的偏置电压的碳氟化合物气体的气体产生的等离子体来蚀刻氧化膜; 并且通过在反应室内产生氧等离子体，基本上没有施加偏置电压从反应室中除去氟。