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    Semiconductor device and method for manufacturing the same
    3.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07821069B2

    公开(公告)日：2010-10-26

    申请号：US12010111

    申请日：2008-01-22

    申请人： Satoshi Shiraki ,  Hiroyuki Ban ,  Akira Yamada

    发明人： Satoshi Shiraki ,  Hiroyuki Ban ,  Akira Yamada

    IPC分类号： H01L23/62

    CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.

    摘要翻译： 半导体器件包括：n个晶体管元件; n电阻元件; 和n个电容元件，每种元件串联在第一和第二端子之间。 每个晶体管元件的栅极具有栅极焊盘，并且每个晶体管元件包括设置在两侧的晶体管焊盘。 每个电阻元件包括设置在两侧的电阻垫。 每个电容元件包括设置在两侧的电容焊盘。 除了第一级晶体管元件之外的栅极焊盘，对应的电阻焊盘和对应的电容焊盘是电耦合的。 第一级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。 第n级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。

    Semiconductor device and method for manufacturing the same
    6.
    发明申请
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20090127605A1

    公开(公告)日：2009-05-21

    申请号：US12010111

    申请日：2008-01-22

    申请人： Satoshi Shiraki ,  Hiroyuki Ban ,  Akira Yamada

    发明人： Satoshi Shiraki ,  Hiroyuki Ban ,  Akira Yamada

    IPC分类号： H01L29/66 ,  H01L21/66

    CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.

    摘要翻译： 半导体器件包括：n个晶体管元件; n电阻元件; 和n个电容元件，每种元件串联在第一和第二端子之间。 每个晶体管元件的栅极具有栅极焊盘，并且每个晶体管元件包括设置在两侧的晶体管焊盘。 每个电阻元件包括设置在两侧的电阻垫。 每个电容元件包括设置在两侧的电容焊盘。 除了第一级晶体管元件之外的栅极焊盘，对应的电阻焊盘和对应的电容焊盘是电耦合的。 第一级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。 第n级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。

    Lateral semiconductor device
    7.
    发明授权
    Lateral semiconductor device 有权
    侧面半导体器件

    公开(公告)号：US09240445B2

    公开(公告)日：2016-01-19

    申请号：US14113419

    申请日：2012-05-10

    申请人： Takashi Suzuki ,  Norihito Tokura ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Youichi Ashida ,  Akira Yamada

    发明人： Takashi Suzuki ,  Norihito Tokura ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Youichi Ashida ,  Akira Yamada

    IPC分类号： H01L23/62 ,  H01L29/06 ,  H01L29/40 ,  H01L29/861

    CPC分类号： H01L29/063 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/861

    摘要： A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.

    摘要翻译： 横向半导体器件包括半导体层，绝缘层和电阻场板。 半导体层包括在表面部分处的第一半导体区域和第二半导体区域，并且第二半导体区域在第一半导体区域周围形成电路。 绝缘层形成在半导体层的表面上并且设置在第一和第二半导体区之间。 电阻场板形成在绝缘层的表面上。 在第一和第二半导体区域之间，第一部分和第二部分沿着围绕第一半导体区域的圆周方向彼此相邻。 电阻场板包括分别形成在第一和第二部分中的第一和第二电阻场板部分，并且第一和第二电阻场板部分彼此分离。

    LATERAL SEMICONDUCTOR DEVICE
    10.
    发明申请
    LATERAL SEMICONDUCTOR DEVICE 有权
    横向半导体器件

    公开(公告)号：US20140048911A1

    公开(公告)日：2014-02-20

    申请号：US14113419

    申请日：2012-05-10

    申请人： Takashi Suzuki ,  Norihito Tokura ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Youichi Ashida ,  Akira Yamada

    发明人： Takashi Suzuki ,  Norihito Tokura ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Youichi Ashida ,  Akira Yamada

    IPC分类号： H01L29/06

    CPC分类号： H01L29/063 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/861

    摘要： A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.

    摘要翻译： 横向半导体器件包括半导体层，绝缘层和电阻场板。 半导体层包括在表面部分处的第一半导体区域和第二半导体区域，并且第二半导体区域在第一半导体区域周围形成电路。 绝缘层形成在半导体层的表面上并且设置在第一和第二半导体区之间。 电阻场板形成在绝缘层的表面上。 在第一和第二半导体区域之间，第一部分和第二部分沿着围绕第一半导体区域的圆周方向彼此相邻。 电阻场板包括分别形成在第一和第二部分中的第一和第二电阻场板部分，并且第一和第二电阻场板部分彼此分离。