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公开(公告)号：US20100154710A1
公开(公告)日：2010-06-24
申请号：US12639508
申请日：2009-12-16
IPC分类号： C23C14/00
CPC分类号： C23C14/243 , C23C14/12 , C23C14/26
摘要： Vapor depositions sources, systems, and related deposition methods. Vapor deposition sources for use with materials that evaporate or sublime in a difficult to control or otherwise unstable manner are provided. The present invention is particularly applicable to deposition of organic material such as those for forming one or more layer in organic light emitting devices.
摘要翻译： 蒸气沉积源，系统和相关沉积方法。 提供了与难以控制或以其他不稳定的方式蒸发或升华的材料一起使用的蒸气沉积源。 本发明特别适用于有机材料的沉积，例如在有机发光器件中形成一个或多个层的有机材料。
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公开(公告)号：US20100031878A1
公开(公告)日：2010-02-11
申请号：US12539443
申请日：2009-08-11
IPC分类号： C23C14/00
CPC分类号： C23C14/243 , C23C14/0623
摘要： The present invention provides deposition sources that can efficiently and controllably provide vaporized material for deposition of thin film materials. Deposition sources described herein can be used to deposit any desired material and are particularly useful for depositing high melting point materials at high evaporation rates. An exemplary application for deposition sources of the present invention is deposition of copper, indium, and gallium in the manufacture of copper indium gallium diselenide based photovoltaic devices.
摘要翻译： 本发明提供了能有效且可控地提供用于沉积薄膜材料的蒸发材料的沉积源。 本文描述的沉积源可用于沉积任何所需材料，并且特别适用于以高蒸发速率沉积高熔点材料。 本发明的沉积源的示例性应用是在制造基于铜铟镓硒的光电器件中沉积铜，铟和镓。
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公开(公告)号：US09062369B2
公开(公告)日：2015-06-23
申请号：US12730800
申请日：2010-03-24
CPC分类号： C23C14/243 , C23C14/0623 , Y02E10/52
摘要： The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.
摘要翻译： 本发明提供可以有效和可控地提供用于沉积薄膜材料的蒸发材料的沉积源，系统和相关方法。 本文所述的沉积源，系统和相关方法可以用于沉积任何所需的材料，并且特别适用于在制造基于铜铟镓硒的光电器件的制造中沉积高蒸气压材料如硒。
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公开(公告)号：US09187821B2
公开(公告)日：2015-11-17
申请号：US12539443
申请日：2009-08-11
CPC分类号： C23C14/243 , C23C14/0623
摘要： The present invention provides deposition sources that can efficiently and controllably provide vaporized material for deposition of thin film materials. Deposition sources described herein can be used to deposit any desired material and are particularly useful for depositing high melting point materials at high evaporation rates. An exemplary application for deposition sources of the present invention is deposition of copper, indium, and gallium in the manufacture of copper indium gallium diselenide based photovoltaic devices.
摘要翻译： 本发明提供了能有效且可控地提供用于沉积薄膜材料的蒸发材料的沉积源。 本文描述的沉积源可用于沉积任何所需材料，并且特别适用于以高蒸发速率沉积高熔点材料。 本发明的沉积源的示例性应用是在制造基于铜铟镓硒的光电器件中沉积铜，铟和镓。
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公开(公告)号：US20100159132A1
公开(公告)日：2010-06-24
申请号：US12628189
申请日：2009-11-30
申请人： Chad Conroy , Scott Wayne Priddy , Jacob Allan Dahlstrom , Richard Charles Bresnahan , David William Gotthold , John Charles Patrin
发明人： Chad Conroy , Scott Wayne Priddy , Jacob Allan Dahlstrom , Richard Charles Bresnahan , David William Gotthold , John Charles Patrin
CPC分类号： C23C14/243 , C23C14/26 , C23C14/562 , Y02E10/541 , Y02P70/521
摘要： A deposition source includes a plurality of crucibles that each contains a deposition material. A heat shield provides at least partial thermal isolation for at least one of the plurality of crucibles. A body is included with a plurality of conductance channels. An input of each of the plurality of conductance channels is coupled to an output of a respective one of the plurality of crucibles. A heater increases a temperature of the plurality of crucibles so that each crucible evaporates the deposition material into the plurality of conductance channels. An input of each of a plurality of nozzles is coupled to an output of one of the plurality of conductance channels. Evaporated deposition materials are transported from the crucibles through the conductance channels to the nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux.
摘要翻译： 沉积源包括多个坩埚，每个坩埚均包含沉积材料。 热屏蔽为多个坩埚中的至少一个提供至少部分热隔离。 身体包含多个电导通道。 多个电导通道中的每一个的输入耦合到多个坩埚中的相应一个的输出。 加热器增加多个坩埚的温度，使得每个坩埚将沉积材料蒸发成多个电导通道。 多个喷嘴中的每一个的输入耦合到多个电导通道中的一个的输出。 蒸发的沉积材料从坩埚通过导电通道输送到喷嘴，喷嘴从多个喷嘴喷射蒸发的沉积材料以形成沉积焊剂。
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公开(公告)号：US20100285218A1
公开(公告)日：2010-11-11
申请号：US12818117
申请日：2010-06-17
申请人： Chad Conroy , Scott Wayne Priddy , Jacob A. Dahlstrom , Rich Bresnahan , David William Gotthold , John Patrin
发明人： Chad Conroy , Scott Wayne Priddy , Jacob A. Dahlstrom , Rich Bresnahan , David William Gotthold , John Patrin
IPC分类号： C23C16/448 , C23C16/44
CPC分类号： C23C14/243 , C23C14/26 , C23C14/562
摘要： A deposition source includes at least one crucible for containing deposition material. A body includes a conductance channel with an input coupled to an output of the crucible. A heater increases a temperature of the crucible so that the crucible evaporates the deposition material into the conductance channel. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. At least one of the plurality of nozzles includes a tube that is positioned proximate to the conductance channel so that the tube restricts an amount of deposition material supplied to the nozzle including the tube.
摘要翻译： 沉积源包括至少一个用于容纳沉积材料的坩埚。 身体包括电导通道，输入端与坩埚的输出相连接。 加热器增加坩埚的温度，使得坩埚将沉积材料蒸发到电导通道中。 多个喷嘴被耦合到电导通道的输出端，使得蒸发的沉积材料从坩埚通过导电通道传送到多个喷嘴，其中蒸发的沉积材料从多个喷嘴喷射以形成沉积焊剂。 多个喷嘴中的至少一个喷嘴包括靠近导电通道定位的管，使得管限制供应到包括管的喷嘴的沉积材料的量。
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公开(公告)号：US20080173241A1
公开(公告)日：2008-07-24
申请号：US12002526
申请日：2007-12-17
IPC分类号： C23C16/455 , B01D7/00
CPC分类号： C23C14/12 , C23C14/243 , C23C14/246 , C23C14/542 , H01L51/001 , H01L51/56
摘要： Vapor depositions sources, systems, and related deposition methods. Vapor deposition sources for use with materials that evaporate or sublime in a difficult to control or otherwise unstable manner are provided. The present invention is particularly applicable to deposition of organic material such as those for forming one or more layer in organic light emitting devices.
摘要翻译： 蒸气沉积源，系统和相关沉积方法。 提供了与难以控制或以其他不稳定的方式蒸发或升华的材料一起使用的蒸气沉积源。 本发明特别适用于有机材料的沉积，例如在有机发光器件中形成一个或多个层的有机材料。
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公开(公告)号：US20080134975A1
公开(公告)日：2008-06-12
申请号：US11903727
申请日：2007-09-24
CPC分类号： F04B37/08
摘要： The present invention relates to vacuum depositions systems and related deposition methods. Vacuum deposition systems that use one or more cyropanels for localized pumping of a deposition region where a substrate is positioned are provided. The present invention is particularly applicable to pumping and minimizing reevaporation of high vapor pressure deposition materials during molecular beam epitaxy.
摘要翻译： 本发明涉及真空沉积系统和相关沉积方法。 提供使用一个或多个细胞浆进行局部泵送位于衬底的沉积区域的真空沉积系统。 本发明特别适用于在分子束外延期间泵送和最小化高蒸气压沉积材料的再蒸发。
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9.发明授权Dual chamber cooling system with cryogenic and non-cryogenic chambers for ultra high vacuum system 有权双室冷却系统，具有用于超高真空系统的低温和非低温室公开(公告)号：US06718775B2
公开(公告)日：2004-04-13
申请号：US10209111
申请日：2002-07-30
IPC分类号： B01D800
CPC分类号： C30B23/066 , C30B23/02 , C30B23/06 , F04B37/08
摘要： An integrated phase separator for use in an ultra high vacuum system, for example, a molecular beam epitaxy system, is described. The vacuum chamber has a cryogenic panel disposed therein. The cryogenic panel includes a cryogenic shroud region and a phase separator region. Liquid nitrogen is introduced into the cryogenic panel via an inlet line. As the liquid nitrogen warms and vaporizes, nitrogen vapor rises within the shroud. The phase separator region within the cryogenic panel provides a near atmospheric pressure vapor barrier over the liquid nitrogen so that the nitrogen vapor may escape smoothly through the outlet of the panel, without forming gas bursts. Also, the phase separator region is vacuum jacketed to prevent cryogenic shroud surface temperature changes due to variations in liquid nitrogen levels, thereby increasing the cryogenic shroud's pumping stability. In one embodiment, used in molecular beam epitaxy (MBE), the cryopanel is divided into first and second cooling chambers. The first cooling chamber contains liquid nitrogen and surrounds the substrates to be coated, while the second cooling chamber contains a different fluid such as water, and surrounds the effusion cells so as to dissipate heat generated during the operation of effusion cells.
摘要翻译： 描述了一种用于超高真空系统的集成相分离器，例如分子束外延系统。 真空室具有设置在其中的低温面板。 低温面板包括低温护罩区域和相分离器区域。 液氮通过入口管线被引入低温面板。 当液氮加热并蒸发时，氮气蒸气在护罩内升高。 低温面板内的相分离器区域在液氮上提供接近大气压的蒸汽阻挡层，使得氮气蒸气可以平滑地通过面板的出口逸出，而不会形成气体爆裂。 此外，相分离器区域被真空夹套以防止由于液氮水平的变化引起的低温护罩表面温度变化，从而增加了低温罩的泵送稳定性。 在一个实施方案中，在分子束外延（MBE）中使用，冷冻板被分为第一和第二冷却室。 第一冷却室包含液氮并围绕待涂覆的基板，而第二冷却室包含不同的流体例如水，并且围绕渗出室，以便耗散在流出室中运行期间产生的热量。
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公开(公告)号：US08328561B2
公开(公告)日：2012-12-11
申请号：US12539458
申请日：2009-08-11
申请人： Scott Wayne Priddy
发明人： Scott Wayne Priddy
IPC分类号： H01R41/00
CPC分类号： C23C14/243 , C23C14/0623
摘要： The present invention provides electrical contact assemblies can be used with vacuum deposition sources. In one exemplary application, the electrical contact assemblies of the present invention provide electrical contact to an arcuate or otherwise curved surface of a heating device used with a vacuum deposition source. In one embodiment, a set of power straps are each connected at one end to a power source feed-through wire and at the other end are urged by a pressure pin and a flat spring into electrical communication with one of the electrical contacts on the heating device.
摘要翻译： 本发明提供电触头组件可以与真空沉积源一起使用。 在一个示例性应用中，本发明的电接触组件提供与与真空沉积源一起使用的加热装置的弧形或其它弯曲表面的电接触。 在一个实施例中，一组电源带的一端各自连接到电源直通电线，另一端由压脚和平板弹簧推压，与加热中的一个电触头电连通 设备。
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