公开(公告)号：US20050196535A1

公开(公告)日：2005-09-08

申请号：US11060466

申请日：2005-02-18

申请人： Scott Weigel ,  Shrikant Khot ,  Rosaleen Morris-Oskanian ,  Steven Mayorga ,  James Mac Dougall ,  Lee Senecal

发明人： Scott Weigel ,  Shrikant Khot ,  Rosaleen Morris-Oskanian ,  Steven Mayorga ,  James Mac Dougall ,  Lee Senecal

IPC分类号： H01L21/31 ,  B05D3/00 ,  H01L21/306 ,  H01L21/3213

CPC分类号： H01L21/3121 ,  C11D7/266 ,  C11D11/0047 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/31695

摘要： A method for the removal of residues comprising silicon from at least a portion of the top and back of a substrate and/or deposition apparatus is disclosed herein. In one aspect, there is provided a method for removing residues comprising: treating the coated substrate and/or deposition apparatus with a removal solvent.

摘要翻译： 本文公开了从衬底和/或沉积设备的顶部和背部的至少一部分去除包含硅的残余物的方法。 一方面，提供一种除去残留物的方法，包括：用去除溶剂处理涂覆的基底和/或沉积装置。

公开(公告)号：US20070287849A1

公开(公告)日：2007-12-13

申请号：US11753153

申请日：2007-05-24

申请人： Steven Mayorga ,  Mark O'Neill ,  Kelly Chandler

发明人： Steven Mayorga ,  Mark O'Neill ,  Kelly Chandler

IPC分类号： C07F7/08

CPC分类号： C07F7/20 ,  C07F7/1804

摘要： The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.

摘要翻译： 本发明提供一种包含二乙氧基甲基硅烷的有机硅组合物，溶解的残留氯化物的浓度以及溶解的残余氯化物清除剂的浓度，当与包含二乙氧基甲基硅烷的另一种组合物组合时，其不产生不需要的氯化物盐沉淀物。

公开(公告)号：US20080042105A1

公开(公告)日：2008-02-21

申请号：US11872221

申请日：2007-10-15

申请人： Steven Mayorga ,  Manchao Xiao ,  Thomas Gaffney ,  Robert Syvret

发明人： Steven Mayorga ,  Manchao Xiao ,  Thomas Gaffney ,  Robert Syvret

IPC分类号： C09K15/32

CPC分类号： C07F7/21 ,  C07F7/089 ,  C07F7/20 ,  C23C16/401 ,  C23C16/4402

摘要： The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of an antioxidant polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and an antioxidant.

摘要翻译： 本发明是 （a）用于稳定环四硅氧烷（例如1,3,5,7-四甲基环四硅氧烷）的方法，用于电子材料制造中用于氧化硅的化学气相沉积工艺中的聚合，包括向其提供有效量的抗氧化聚合抑制剂 环四硅氧烷; 和（b）在电子材料制造中作为氧化硅前体的化学气相沉积方法中使用的稳定的聚合的1,3,5,7-四甲基环四硅氧烷的环四硅氧烷的组合物，包括： 这种环四硅氧烷和抗氧化剂。

公开(公告)号：US20060252904A1

公开(公告)日：2006-11-09

申请号：US11484094

申请日：2006-07-11

申请人： Steven Mayorga ,  Manchao Xiao ,  Thomas Gaffney ,  Robert Syvret

发明人： Steven Mayorga ,  Manchao Xiao ,  Thomas Gaffney ,  Robert Syvret

IPC分类号： C23C16/00

CPC分类号： C23C16/401 ,  C07F7/20 ,  C07F7/21 ,  C08K5/13 ,  C09D4/00 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/31608 ,  C08G77/04

摘要： The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a free radical scavenger polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a free radical scavenger polymerization inhibitor.