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    Magnetic memory with separate read and write paths
    2.
    发明授权
    Magnetic memory with separate read and write paths 有权
    具有独立读写路径的磁记忆体

    公开(公告)号：US08681541B2

    公开(公告)日：2014-03-25

    申请号：US13966361

    申请日：2013-08-14

    Applicant: Seagate Technology LLC

    Inventor： Yong Lu ,  Hongyue Liu ,  Zheng Gao ,  Insik Jin ,  Dimitar V. Dimitrov

    IPC: G11C11/14

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    Abstract: Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.

    Abstract translation: 公开了具有分离的读和写路径的磁存储器。 磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有 自由磁化方向。 第一磁化取向与第二磁化取向相反。 隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。 位线电耦合到第二端部。 源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。

    Programmable metallization memory cell with layered solid electrolyte structure
    3.
    发明授权
    Programmable metallization memory cell with layered solid electrolyte structure 有权
    具有层状固体电解质结构的可编程金属化存储单元

    公开(公告)号：US08772122B2

    公开(公告)日：2014-07-08

    申请号：US13940547

    申请日：2013-07-12

    Applicant: Seagate Technology LLC

    Inventor： Nurul Amin ,  Insik Jin ,  Wei Tian ,  Andrew James Wirebaugh ,  Venugopalan Vaithyanathan ,  Ming Sun

    IPC: H01L21/20

    CPC classification number: H01L45/16 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/14

    Abstract: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

    Abstract translation: 可编程金属化存储单元具有有源电极，相对的惰性电极和将活性电极与惰性电极分开的可变电阻元件。 可变电阻元件包括多个交替的固体电解质层和导电层。 导电层在可编程金属化存储单元中将有源电极电耦合到惰性电极。 也公开了形成它们的方法。

    PROGRAMMABLE METALLIZATION MEMORY CELL WITH LAYERED SOLID ELECTROLYTE STRUCTURE
    5.
    发明申请
    PROGRAMMABLE METALLIZATION MEMORY CELL WITH LAYERED SOLID ELECTROLYTE STRUCTURE 有权
    具有层状固体电解质结构的可编程金属化存储单元

    公开(公告)号：US20130330901A1

    公开(公告)日：2013-12-12

    申请号：US13940547

    申请日：2013-07-12

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Nurul Amin ,  Insik Jin ,  Wei Tian ,  Andrew James Wirebaugh ,  Venugopalan Vaithyanathan ,  Ming Sun

    IPC: H01L45/00

    CPC classification number: H01L45/16 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/14

    Abstract: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

    Abstract translation: 可编程金属化存储单元具有有源电极，相对的惰性电极和将活性电极与惰性电极分开的可变电阻元件。 可变电阻元件包括多个交替的固体电解质层和导电层。 导电层在可编程金属化存储单元中将有源电极电耦合到惰性电极。 也公开了形成它们的方法。

    MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS
    6.
    发明申请
    MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS 有权
    具有独立阅读和写入功能的磁记录

    公开(公告)号：US20140015075A1

    公开(公告)日：2014-01-16

    申请号：US13966361

    申请日：2013-08-14

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Yong Lu ,  Hongyue Liu ,  Zheng Gao ,  Insik Jin ,  Dimitar V. Dimitrov

    IPC: H01L43/02

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    Abstract: Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.

    Abstract translation: 公开了具有分离的读和写路径的磁存储器。 磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有 自由磁化方向。 第一磁化取向与第二磁化取向相反。 隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。 位线电耦合到第二端部。 源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。

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