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公开(公告)号：US09378830B2
公开(公告)日：2016-06-28
申请号：US13943441
申请日：2013-07-16
Applicant: Seagate Technology LLC
Inventor： Antoine Khoueir , Varun Voddi , Rodney Virgil Bowman
CPC classification number: G11C16/14 , G11C11/5628 , G11C13/0033 , G11C13/0069 , G11C16/0483 , G11C16/10 , G11C16/3431
Abstract: Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, data are written to a set of solid-state non-volatile memory cells so that each memory cell in the set is written to an associated initial programmed state. Drift in the programmed state of a selected memory cell in the set is detected, and the selected memory cell is partially reprogrammed to return the selected memory cell to the associated initial programmed state.
Abstract translation: 用于管理诸如闪存阵列的存储器中的数据的方法和装置。 根据一些实施例，将数据写入一组固态非易失性存储器单元，使得该组中的每个存储单元被写入相关联的初始编程状态。 检测到集合中所选择的存储器单元的编程状态的漂移，并且所选存储单元被部分重新编程以使所选择的存储单元返回到相关的初始编程状态。
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公开(公告)号：US20150023097A1
公开(公告)日：2015-01-22
申请号：US13943441
申请日：2013-07-16
Applicant: Seagate Technology LLC
Inventor： Antoine Khoueir , Varun Voddi , Rodney Virgil Bowman
CPC classification number: G11C16/14 , G11C11/5628 , G11C13/0033 , G11C13/0069 , G11C16/0483 , G11C16/10 , G11C16/3431
Abstract: Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, data are written to a set of solid-state non-volatile memory cells so that each memory cell in the set is written to an associated initial programmed state. Drift in the programmed state of a selected memory cell in the set is detected, and the selected memory cell is partially reprogrammed to return the selected memory cell to the associated initial programmed state.
Abstract translation: 用于管理诸如闪存阵列的存储器中的数据的方法和装置。 根据一些实施例，将数据写入一组固态非易失性存储器单元，使得该组中的每个存储单元被写入相关联的初始编程状态。 检测到集合中所选择的存储器单元的编程状态的漂移，并且所选存储单元被部分重新编程以使所选择的存储单元返回到相关的初始编程状态。
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