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1.发明授权Charge loss compensation through augmentation of accumulated charge in a memory cell 有权通过增加存储单元中的累积电荷来进行充电损失补偿公开(公告)号：US09576649B2
公开(公告)日：2017-02-21
申请号：US14675056
申请日：2015-03-31
Applicant: Seagate Technology LLC
Inventor： Wei Wang , Antoine Khoueir , Young Pil Kim
CPC classification number: G11C13/0033 , G06F11/1068 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/107 , G11C16/14 , G11C16/3418 , G11C16/3431 , G11C2211/5621
Abstract: Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, a block of solid-state non-volatile memory cells are each programmed to an associated programmed state responsive to a respective amount of accumulated charge. A charge loss compensation circuit adds a relatively small amount of additional charge to the respective amount of accumulated charge in each of the memory cells to maintain the associated programmed states of the cells.
Abstract translation: 用于管理诸如闪存阵列的存储器中的数据的方法和装置。 根据一些实施例，每个固态非易失性存储器单元的块都被编程为响应相应的累积电荷量的相关编程状态。 电荷损失补偿电路将相对少量的附加电荷添加到每个存储单元中的累积电荷的相应量，以维持单元的相关编程状态。
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2.发明申请Charge Loss Compensation Through Augmentation of Accumulated Charge in a Memory Cell 有权通过增加存储单元中累积电荷的电荷损失补偿公开(公告)号：US20160293250A1
公开(公告)日：2016-10-06
申请号：US14675056
申请日：2015-03-31
Applicant: Seagate Technology LLC
Inventor： Wei Wang , Antoine Khoueir , Young Pil Kim
IPC: G11C11/56
CPC classification number: G11C13/0033 , G06F11/1068 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/107 , G11C16/14 , G11C16/3418 , G11C16/3431 , G11C2211/5621
Abstract: Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, a block of solid-state non-volatile memory cells are each programmed to an associated programmed state responsive to a respective amount of accumulated charge. A charge loss compensation circuit adds a relatively small amount of additional charge to the respective amount of accumulated charge in each of the memory cells to maintain the associated programmed states of the cells.
Abstract translation: 用于管理诸如闪存阵列的存储器中的数据的方法和装置。 根据一些实施例，每个固态非易失性存储器单元的块都被编程为响应相应的累积电荷量的相关编程状态。 电荷损失补偿电路将相对少量的附加电荷添加到每个存储单元中的累积电荷的相应量，以维持单元的相关编程状态。
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