Method of Making an Organic Semiconductor Device
    4.
    发明申请
    Method of Making an Organic Semiconductor Device 审中-公开
    制造有机半导体器件的方法

    公开(公告)号:US20110281393A1

    公开(公告)日:2011-11-17

    申请号:US12781291

    申请日:2010-05-17

    IPC分类号: H01L51/40

    摘要: A method of making an organic semiconductor device that comprises providing a surface comprising surface hydroxyl groups; applying an amine to the surface to form a first coated surface; applying a silane compound to the first coated surface to form a second coated surface; exposing the second coated surface to conditions sufficient to chemically react the silane compound with the hydroxyl groups to form a hydrophobic surface; and applying an organic semiconducting material to the hydrophobic surface.

    摘要翻译: 一种制造有机半导体器件的方法,包括提供包含表面羟基的表面; 将胺施加到所述表面以形成第一涂覆表面; 将硅烷化合物施加到第一涂覆表面以形成第二涂覆表面; 使第二涂覆表面暴露于使硅烷化合物与羟基发生化学反应形成疏水表面的条件; 以及将有机半导体材料施加到所述疏水表面。