公开(公告)号：US20110133304A1

公开(公告)日：2011-06-09

申请号：US12980268

申请日：2010-12-28

申请人： Sebastian Schmidt ,  Thomas Schafbauer ,  Hang Yip Liu ,  Yayi Wei

发明人： Sebastian Schmidt ,  Thomas Schafbauer ,  Hang Yip Liu ,  Yayi Wei

IPC分类号： H01L29/00 ,  H01L21/66

CPC分类号： H01L22/10 ,  B81C1/00539 ,  G06F17/5068 ,  H01L21/027 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76229 ,  H01L21/82

摘要： A chip includes a number a plurality of functional areas of a layer and a number of dummy structures within the layer. The dummy structures are spaced from the functional areas. Each dummy structure has a size that is a function of the size and density of the functional areas.

摘要翻译： 芯片包括多个层中的多个功能区域和该层内的多个虚设结构。 虚拟结构与功能区域间隔开。 每个虚拟结构具有作为功能区域的大小和密度的函数的大小。

公开(公告)号：US07868427B2

公开(公告)日：2011-01-11

申请号：US12353193

申请日：2009-01-13

申请人： Sebastian Schmidt ,  Hang-Yip Liu ,  Thomas Schafbauer ,  Yayi Wei

发明人： Sebastian Schmidt ,  Hang-Yip Liu ,  Thomas Schafbauer ,  Yayi Wei

IPC分类号： H01L21/76 ,  H01L21/4763 ,  H01L21/302 ,  H01L23/544

CPC分类号： H01L22/10 ,  B81C1/00539 ,  G06F17/5068 ,  H01L21/027 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76229 ,  H01L21/82

摘要： A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.

摘要翻译： 正在处理的衬底上的材料层，例如， 以形成芯片，包括一个或多个功能结构。 为了在制造芯片期间控制图案密度，将不同尺寸和形状的虚拟填充结构添加到与材料层的功能结构不同距离的芯片。 特别地，虚拟结构的布置，尺寸和形状被确定为材料层的功能结构的距离和密度的函数。

公开(公告)号：US20090124027A1

公开(公告)日：2009-05-14

申请号：US12353193

申请日：2009-01-13

申请人： Sebastian Schmidt ,  Thomas Schafbauer ,  Hang Yip Liu ,  Yayi Wei

发明人： Sebastian Schmidt ,  Thomas Schafbauer ,  Hang Yip Liu ,  Yayi Wei

IPC分类号： H01L21/66

CPC分类号： H01L22/10 ,  B81C1/00539 ,  G06F17/5068 ,  H01L21/027 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76229 ,  H01L21/82

摘要： A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.

摘要翻译： 正在处理的衬底上的材料层，例如， 以形成芯片，包括一个或多个功能结构。 为了在制造芯片期间控制图案密度，将不同尺寸和形状的虚拟填充结构添加到与材料层的功能结构不同距离的芯片。 特别地，虚拟结构的布置，尺寸和形状被确定为材料层的功能结构的距离和密度的函数。

公开(公告)号：US07494930B2

公开(公告)日：2009-02-24

申请号：US11441649

申请日：2006-05-26

申请人： Sebastian Schmidt ,  Thomas Schafbauer ,  Hang Yip Liu ,  Yayi Wei

发明人： Sebastian Schmidt ,  Thomas Schafbauer ,  Hang Yip Liu ,  Yayi Wei

IPC分类号： H01L21/302

CPC分类号： H01L22/10 ,  B81C1/00539 ,  G06F17/5068 ,  H01L21/027 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76229 ,  H01L21/82

摘要： A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.

摘要翻译： 正在处理的衬底上的材料层，例如， 以形成芯片，包括一个或多个功能结构。 为了在制造芯片期间控制图案密度，将不同尺寸和形状的虚拟填充结构添加到与材料层的功能结构不同距离的芯片。 特别地，虚拟结构的布置，尺寸和形状被确定为材料层的功能结构的距离和密度的函数。

公开(公告)号：US07071074B2

公开(公告)日：2006-07-04

申请号：US10671123

申请日：2003-09-24

申请人： Sebastian Schmidt ,  Thomas Schafbauer ,  Hang Yip Liu ,  Yayi Wei

发明人： Sebastian Schmidt ,  Thomas Schafbauer ,  Hang Yip Liu ,  Yayi Wei

IPC分类号： H01L21/76 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L22/10 ,  B81C1/00539 ,  G06F17/5068 ,  H01L21/027 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76229 ,  H01L21/82

摘要： A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.

公开(公告)号：US20050064634A1

公开(公告)日：2005-03-24

申请号：US10671123

申请日：2003-09-24

申请人： Sebastian Schmidt ,  Thomas Schafbauer ,  Hang Liu ,  Yayi Wei

发明人： Sebastian Schmidt ,  Thomas Schafbauer ,  Hang Liu ,  Yayi Wei

IPC分类号： G06F17/50 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/762 ,  H01L21/82 ,  H01L21/338 ,  H01L21/331 ,  H01L21/8222

CPC分类号： H01L22/10 ,  B81C1/00539 ,  G06F17/5068 ,  H01L21/027 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76229 ,  H01L21/82

摘要： A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.

摘要翻译： 正在处理的衬底上的材料层，例如， 以形成芯片，包括一个或多个功能结构。 为了在制造芯片期间控制图案密度，将不同尺寸和形状的虚拟填充结构添加到与材料层的功能结构不同距离的芯片。 特别地，虚拟结构的布置，尺寸和形状被确定为材料层的功能结构的距离和密度的函数。

公开(公告)号：US20060216905A1

公开(公告)日：2006-09-28

申请号：US11441649

申请日：2006-05-26

申请人： Sebastian Schmidt ,  Thomas Schafbauer ,  Hang Liu ,  Yayi Wei

发明人： Sebastian Schmidt ,  Thomas Schafbauer ,  Hang Liu ,  Yayi Wei

IPC分类号： H01L21/4763 ,  H01L21/76 ,  H01L21/461

CPC分类号： H01L22/10 ,  B81C1/00539 ,  G06F17/5068 ,  H01L21/027 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76229 ,  H01L21/82

摘要： A material layer on a substrate being processed, e.g. to form chips, includes one or more functional structures. In order to control pattern density during fabrication of the chip, dummy fill structures of different sizes and shapes are added to the chip at different distances from the functional structures of the material layer. In particular, the placement, size and shape of the dummy structures are determined as a function of a distance to, and density of, the functional structures of the material layer.

公开(公告)号：US20100321656A1

公开(公告)日：2010-12-23

申请号：US12868257

申请日：2010-08-25

申请人： Hang Yip Liu ,  Sebastian Schmidt ,  Benjamin Szu-Min Lin

发明人： Hang Yip Liu ,  Sebastian Schmidt ,  Benjamin Szu-Min Lin

IPC分类号： G03B27/42 ,  G03F1/00

CPC分类号： G03F1/36 ,  G03F1/50 ,  G03F7/70283

摘要： A system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.

摘要翻译： 一种用于补偿光刻工艺中图案成像中的邻近效应的系统和方法。 通过具有对应于预定图案的透光开口的曝光掩模，以预定图案实现光致抗蚀剂层的曝光。 曝光掩模具有由透光开口和由透光开口稀疏地填充的区域密集地区域。 光通过密集居住的透光开口被衰减不同于通过疏散人口的透光开口的量。

公开(公告)号：US08229062B2

公开(公告)日：2012-07-24

申请号：US12868257

申请日：2010-08-25

申请人： Hang Yip Liu ,  Sebastian Schmidt ,  Benjamin Szu-Min Lin

发明人： Hang Yip Liu ,  Sebastian Schmidt ,  Benjamin Szu-Min Lin

IPC分类号： G03F1/32 ,  G21K5/00

CPC分类号： G03F1/36 ,  G03F1/50 ,  G03F7/70283

摘要： A system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.

摘要翻译： 一种用于补偿光刻工艺中图案成像中的邻近效应的系统和方法。 通过具有对应于预定图案的透光开口的曝光掩模，以预定图案实现光致抗蚀剂层的曝光。 曝光掩模具有由透光开口和由透光开口稀疏地填充的区域密集地区域。 光通过密集居住的透光开口被衰减不同于通过疏散人口的透光开口的量。

公开(公告)号：US07052808B2

公开(公告)日：2006-05-30

申请号：US10364664

申请日：2003-02-11

申请人： Hang Yip Liu ,  Sebastian Schmidt ,  Benjamin Szu-Min Lin

发明人： Hang Yip Liu ,  Sebastian Schmidt ,  Benjamin Szu-Min Lin

IPC分类号： G03F1/08

CPC分类号： G03F1/36 ,  G03F1/50 ,  G03F7/70283

摘要： An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.

摘要翻译： 一种用于补偿光刻工艺中图案成像中的邻近效应的装置，系统和方法。 通过具有对应于预定图案的透光开口的曝光掩模，以预定图案实现光致抗蚀剂层的曝光。 曝光掩模具有由透光开口和由透光开口稀疏地填充的区域密集地区域。 光通过密集居住的透光开口被衰减不同于通过疏散人口的透光开口的量。