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    MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS
    1.
    发明申请
    MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS 审中-公开
    包括由隧道障碍物分离的磁层的磁记忆装置

    公开(公告)号：US20130234269A1

    公开(公告)日：2013-09-12

    申请号：US13838598

    申请日：2013-03-15

    申请人： Sechung OH ,  Jangeun Lee ,  Jeahyoung Lee ,  Woojin Kim ,  Woo Chang Lim ,  Junho Jeong ,  Sukhun Choi

    发明人： Sechung OH ,  Jangeun Lee ,  Jeahyoung Lee ,  Woojin Kim ,  Woo Chang Lim ,  Junho Jeong ,  Sukhun Choi

    IPC分类号： H01L43/02

    CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.

    摘要翻译： 磁存储器件可以包括第一垂直磁性层，第一垂直磁性层上的非磁性层和非磁性层上的第一结磁性层，其中非磁性层位于第一垂直磁性层之间 和第一结磁性层。 隧道势垒可以在第一结磁性层上，其中第一结磁性层位于非磁性层和隧道势垒之间。 第二结磁性层可以在隧道势垒上，其中隧道势垒在第一和第二结磁层之间，第二垂直磁性层可以在第二结磁性层上，第二结磁性层位于隧道势垒之间 和第二垂直磁性层。

    MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS
    2.
    发明申请
    MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS 审中-公开
    包括由隧道障碍物分离的磁层的磁记忆装置

    公开(公告)号：US20140191346A1

    公开(公告)日：2014-07-10

    申请号：US14206053

    申请日：2014-03-12

    申请人： Sechung Oh ,  Jangeun Lee ,  Jeahyoung Lee ,  Woojin Kim ,  Woo Chang Lim ,  Junho Jeong ,  Sukhun Choi

    发明人： Sechung Oh ,  Jangeun Lee ,  Jeahyoung Lee ,  Woojin Kim ,  Woo Chang Lim ,  Junho Jeong ,  Sukhun Choi

    IPC分类号： H01L43/02

    CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.

    摘要翻译： 磁存储器件可以包括第一垂直磁性层，第一垂直磁性层上的非磁性层和非磁性层上的第一结磁性层，其中非磁性层位于第一垂直磁性层之间 和第一结磁性层。 隧道势垒可以在第一结磁性层上，其中第一结磁性层位于非磁性层和隧道势垒之间。 第二结磁性层可以在隧道势垒上，其中隧道势垒在第一和第二结磁层之间，第二垂直磁性层可以在第二结磁性层上，第二结磁性层位于隧道势垒之间 和第二垂直磁性层。

    Magnetic Memory Devices
    5.
    发明申请
    Magnetic Memory Devices 有权
    磁存储器件

    公开(公告)号：US20110062537A1

    公开(公告)日：2011-03-17

    申请号：US12862074

    申请日：2010-08-24

    申请人： Sechung Oh ,  Jangeun Lee ,  Jeahyoung Lee ,  Woojin Kim ,  Woo Chang Lim ,  Junho Jeong ,  Sukhun Choi

    发明人： Sechung Oh ,  Jangeun Lee ,  Jeahyoung Lee ,  Woojin Kim ,  Woo Chang Lim ,  Junho Jeong ,  Sukhun Choi

    IPC分类号： H01L29/82

    CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.

    摘要翻译： 磁存储器件可以包括第一垂直磁性层，第一垂直磁性层上的非磁性层和非磁性层上的第一结磁性层，其中非磁性层位于第一垂直磁性层之间 和第一结磁性层。 隧道势垒可以在第一结磁性层上，其中第一结磁性层位于非磁性层和隧道势垒之间。 第二结磁性层可以在隧道势垒上，其中隧道势垒在第一和第二结磁层之间，第二垂直磁性层可以在第二结磁性层上，第二结磁性层位于隧道势垒之间 和第二垂直磁性层。

    MAGNETIC MEMORY DEVICES
    6.
    发明申请
    MAGNETIC MEMORY DEVICES 有权
    磁记忆装置

    公开(公告)号：US20110303996A1

    公开(公告)日：2011-12-15

    申请号：US13159236

    申请日：2011-06-13

    申请人： Woojin Kim ,  Sechung Oh ,  Jangeun Lee ,  Jeahyoung Lee ,  Junho Jeong ,  Woo Chang Lim

    发明人： Woojin Kim ,  Sechung Oh ,  Jangeun Lee ,  Jeahyoung Lee ,  Junho Jeong ,  Woo Chang Lim

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/10

    摘要： A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer.

    摘要翻译： 一种磁存储器件包括具有固定的磁化方向的参考磁性层，参考磁性层上的隧道势垒层，在与参考磁性层相对的隧道势垒层上具有可变的磁化方向的自由层和磁化反转辅助层 在自由层上。 磁化反转辅助层具有固定的磁化方向，其基本上垂直于沿着隧道势垒层和参考层之间的界面的平面。 磁化反转辅助层可以直接在自由层上，或者可以在磁化反转辅助层和自由层之间提供交换耦合控制层。

    Magnetic memory devices
    9.
    发明授权
    Magnetic memory devices 有权
    磁存储器件

    公开(公告)号：US08405173B2

    公开(公告)日：2013-03-26

    申请号：US13159236

    申请日：2011-06-13

    申请人： Woojin Kim ,  Sechung Oh ,  Jangeun Lee ,  Jeahyoung Lee ,  Junho Jeong ,  Woo Chang Lim

    发明人： Woojin Kim ,  Sechung Oh ,  Jangeun Lee ,  Jeahyoung Lee ,  Junho Jeong ,  Woo Chang Lim

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/10

    摘要： A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer.

    摘要翻译： 一种磁存储器件包括具有固定的磁化方向的参考磁性层，参考磁性层上的隧道势垒层，在与参考磁性层相对的隧道势垒层上具有可变的磁化方向的自由层和磁化反转辅助层 在自由层上。 磁化反转辅助层具有固定的磁化方向，其基本上垂直于沿着隧道势垒层和参考层之间的界面的平面。 磁化反转辅助层可以直接在自由层上，或者可以在磁化反转辅助层和自由层之间提供交换耦合控制层。