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    Thin film transistor matrix device
    2.
    发明授权
    Thin film transistor matrix device 失效
    薄膜晶体管矩阵器件

    公开(公告)号：US5483082A

    公开(公告)日：1996-01-09

    申请号：US174030

    申请日：1993-12-28

    申请人： Hideaki Takizawa ,  Yasuhiro Nasu ,  Kazuhiro Watanabe ,  Shiro Hirota ,  Kazuo Nonaka ,  Seii Sato ,  Teiji Majima

    发明人： Hideaki Takizawa ,  Yasuhiro Nasu ,  Kazuhiro Watanabe ,  Shiro Hirota ,  Kazuo Nonaka ,  Seii Sato ,  Teiji Majima

    IPC分类号： G02F1/136 ,  G02F1/13 ,  G02F1/1333 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

    CPC分类号： G02F1/13458 ,  G02F1/136213 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/13452 ,  G02F2001/133357

    摘要： A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film. Thus, the fabrication process of the TFT matrix device can be simplified, and lower costs can be realized. Characteristic changes of the storage capacitance can be prevented, and yields and reliability can be improved.

    摘要翻译： 一种薄膜晶体管矩阵器件，包括透明绝缘衬底，薄膜晶体管单元，像素单元，存储电容单元，栅极端子单元和漏极端子单元，所述存储电容单元包括形成在 透明绝缘基板，由与栅电极相同材料的金属层形成; 形成在所述辅助电容电极上并由与所述栅极绝缘膜共用的绝缘膜和与所述半导体有源层相同材料的非掺杂半导体层形成的电介质膜; 以及形成在电介质膜上并由与半导体接触层相同材料的掺杂半导体层和与源电极和漏电极相同材料的金属层形成的对电极，对电极连接到图像 元件电极通过在与钝化膜共同的保护膜中打开的接触孔。 因此，可以简化TFT矩阵器件的制造工艺，并且可以实现更低的成本。 可以防止存储电容的特性变化，并且可以提高产量和可靠性。

    Coordinate detecting apparatus
    3.
    发明授权
    Coordinate detecting apparatus 失效
    坐标检测装置

    公开(公告)号：US4680430A

    公开(公告)日：1987-07-14

    申请号：US706224

    申请日：1985-02-27

    申请人： Kazuo Yoshikawa ,  Toru Asano ,  Hisashi Yamaguchi ,  Hideaki Takizawa ,  Shizuo Andoh

    发明人： Kazuo Yoshikawa ,  Toru Asano ,  Hisashi Yamaguchi ,  Hideaki Takizawa ,  Shizuo Andoh

    IPC分类号： G06K11/00 ,  G06F3/03 ,  G06F3/033 ,  G06F3/045 ,  G08C21/00

    CPC分类号： G06F3/045

    摘要： A coordinate detecting apparatus for determining the coordinate data of a point on a plane by indicating the point with a touch of a fingertip or other load to the point. The apparatus comprises a transparent resistive film forming the plane (touch panel) and a buffer circuit operating as a voltage follower circuit having substantially infinate input impedance. The buffer amplifier is operatively connected between each selected pair of facing ends of a substantially rectangular region of the resistive film, and equalizes the potentials at the ends. The change of the impedance between one of the ends and the ground is detected in accordance with the touch of the fingertip to the touch panel and is used as an original coordinate data. Further modifications concerning the avoidance of degradation in the detection quality due to fluctuations of the impedance provided by the touch of a fingertip, for example, and the methods to perform 2-dimensional coordinate detection are described.

    摘要翻译： 一种坐标检测装置，用于通过用指尖的触摸或其他负载指示点来确定平面上的点的坐标数据。 该装置包括形成平面（触摸面板）的透明电阻膜和作为基本上具有输入阻抗的电压跟随器电路的缓冲电路。 缓冲放大器可操作地连接在电阻膜的大致矩形区域的每个所选择的一对相对端之间，并且使末端的电位相等。 根据触摸面板的指尖的触摸检测端部和地面之间的阻抗的变化，并将其用作原始坐标数据。 描述了关于避免由于触摸触摸提供的阻抗的波动引起的检测质量退化的进一步修改以及执行二维坐标检测的方法。

    Method for fabricating thin film transistor matrix device
    4.
    发明授权
    Method for fabricating thin film transistor matrix device 失效
    制造薄膜晶体管矩阵器件的方法

    公开(公告)号：US5580796A

    公开(公告)日：1996-12-03

    申请号：US470057

    申请日：1995-06-06

    申请人： Hideaki Takizawa ,  Yasuhiro Nasu ,  Kazuhiro Watanabe ,  Shiro Hirota ,  Kazuo Nonaka ,  Seii Sato ,  Teiji Majima

    发明人： Hideaki Takizawa ,  Yasuhiro Nasu ,  Kazuhiro Watanabe ,  Shiro Hirota ,  Kazuo Nonaka ,  Seii Sato ,  Teiji Majima

    IPC分类号： G02F1/136 ,  G02F1/13 ,  G02F1/1333 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

    CPC分类号： G02F1/13458 ,  G02F1/136213 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/13452 ,  G02F2001/133357

    摘要： A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film. Thus, the fabrication process of the TFT matrix device can be simplified, and lower costs can be realized. Characteristic changes of the storage capacitance can be prevented, and yields and reliability can be improved.

    摘要翻译： 一种薄膜晶体管矩阵器件，包括透明绝缘衬底，薄膜晶体管单元，像素单元，存储电容单元，栅极端子单元和漏极端子单元，所述存储电容单元包括形成在 透明绝缘基板，由与栅电极相同材料的金属层形成; 形成在所述辅助电容电极上并由与所述栅极绝缘膜共用的绝缘膜和与所述半导体有源层相同材料的非掺杂半导体层形成的电介质膜; 以及形成在电介质膜上并由与半导体接触层相同材料的掺杂半导体层和与源电极和漏电极相同材料的金属层形成的对电极，对电极连接到图像 元件电极通过在与钝化膜共同的保护膜中打开的接触孔。 因此，可以简化TFT矩阵器件的制造工艺，并且可以实现更低的成本。 可以防止存储电容的特性变化，并且可以提高产量和可靠性。