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385 条记录 (耗时 0.029 秒)

    Polymer, resist composition and patterning process
    3.
    发明授权
    Polymer, resist composition and patterning process 有权
    聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US06703183B2

    公开(公告)日：2004-03-09

    申请号：US10241530

    申请日：2002-09-12

    申请人： Tsunehiro Nishi ,  Takeshi Kinsho ,  Koji Hasegawa ,  Satoshi Watanabe ,  Shigehiro Nagura

    发明人： Tsunehiro Nishi ,  Takeshi Kinsho ,  Koji Hasegawa ,  Satoshi Watanabe ,  Shigehiro Nagura

    IPC分类号： G03F7004

    CPC分类号： C08F220/18 ,  G03F7/0397

    摘要： A polymer comprising recurring units of formulae (1) and (2) wherein R1 and R3 are H or methyl, R2 and R4 are C1-15 alkyl, R5 to R8 are H, or R5 and R7, and R6 and R8 form trimethylene or 1,3-cyclopentylene and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.

    摘要翻译： 包含式（1）和（2）的重复单元的聚合物，其中R 1和R 3为H或甲基，R 2和R 4为C 1-15烷基，R 5为R 新颖的是H或R 5和R 7，并且R 6和R 8形成三亚甲基或1,3-亚环戊基并具有1,000-500,000的Mw。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能量辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于电子束或深紫外线的微图案化。

    Polymers chemically amplified positive resist compositions, and patterning method
    6.
    发明授权
    Polymers chemically amplified positive resist compositions, and patterning method 失效
    聚合物化学放大正性抗蚀剂组合物和图案化方法

    公开(公告)号：US6027854A

    公开(公告)日：2000-02-22

    申请号：US31560

    申请日：1998-02-27

    申请人： Tsunehiro Nishi ,  Osamu Watanabe ,  Satoshi Watanabe ,  Shigehiro Nagura ,  Toshinobu Ishihara

    发明人： Tsunehiro Nishi ,  Osamu Watanabe ,  Satoshi Watanabe ,  Shigehiro Nagura ,  Toshinobu Ishihara

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

    摘要： A polymer comprising recurring units of formula (1) is provided wherein some hydrogen atoms of phenolic hydroxyl groups and/or alcoholic hydroxyl groups and/or carboxyl groups are replaced by acid labile groups. The polymer is crosslinked with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining alcoholic hydroxyl groups and/or carboxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group, alcoholic hydroxyl group and carboxyl group. The polymer has Mw of 1,000-500,000. ##STR1## R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, R.sup.3 is a divalent C.sub.1 -C.sub.18 hydrocarbon group which may have a hetero atom, R.sup.4 and R.sup.5 are H or monovalent C.sub.1 -C.sub.18 hydrocarbon groups which may have a hetero atom, x and y are integers satisfying x+y.ltoreq.5, x', y' and z' are integers satisfying x'+y'+z'.ltoreq.5, p, q and r are numbers satisfying 0.ltoreq.p.ltoreq.0.4, 0.ltoreq.q.ltoreq.0.4, 0.01.ltoreq.p+q.ltoreq.0.8, and p+q+r=1. A chemically amplified positive resist composition comprising the polymer as a base resin has high sensitivity, high resolution, a wide latitude of exposure, and process adaptability and forms resist patterns having plasma etching resistance and heat resistance.

    摘要翻译： 提供了包含式（1）的重复单元的聚合物，其中酚羟基和/或醇羟基和/或羧基的一些氢原子被酸不稳定基团取代。 聚合物与由一些残留的醇羟基和/或羧基与链烯基醚化合物或卤代烷基醚化合物的反应产生的具有C-O-C键的交联基团交联。 酸不稳定基团和交联基团的结合量平均为全部酚羟基，醇羟基和羧基的0摩尔％至80摩尔％以上。 聚合物的Mw为1,000-500,000。 R1是H或甲基，R2是C1-C8烷基，R3是可以具有杂原子的二价C1-C18烃基，R4和R5是H或可以具有杂原子的一价C1-C18烃基，x和 y是满足x + y <5的整数，x'，y'和z'是满足x'+ y'+ z'= 5的整数，p，q和r是满足0

    Photo acid generator, chemical amplification resist material
    8.
    发明授权
    Photo acid generator, chemical amplification resist material 有权
    照片酸发生器，化学放大抗蚀材料

    公开(公告)号：US07211367B2

    公开(公告)日：2007-05-01

    申请号：US11373925

    申请日：2006-03-13

    申请人： Tomohiro Kobayashi ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Youichi Ohsawa ,  Katsuhiro Kobayashi

    发明人： Tomohiro Kobayashi ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Youichi Ohsawa ,  Katsuhiro Kobayashi

    IPC分类号： G03F7/031

    CPC分类号： G03F7/0045 ,  C07D327/06 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0758

    摘要： A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer

    摘要翻译： 提供了包含酸产生器的高分辨率抗蚀剂材料，从而获得了300nm以下的高能量射线的高灵敏度和高分辨率，小的线边缘粗糙度，以及热稳定性和储存稳定性方面的优异性。 此外，提供了使用该抗蚀剂材料的图案形成方法。 具体地，下述通式（1）的新化合物; 以及优选含有该化合物作为光酸发生剂的正性抗蚀剂材料和基础树脂; 被提供。 该正性抗蚀剂材料可含有碱性化合物或溶解抑制剂。 此外，本发明提供了一种图案形成方法，包括以下步骤：将该正性抗蚀剂材料涂布在基板上，然后对该材料进行热处理，通过照片将经处理的材料暴露于波长为300nm以下的高能量射线 掩模，任选地热处理暴露的材料，以及使用显影剂显影材料

    Anti-reflective coating composition
    10.
    发明授权
    Anti-reflective coating composition 失效
    防反射涂料组合物

    公开(公告)号：US5814694A

    公开(公告)日：1998-09-29

    申请号：US833052

    申请日：1997-04-03

    申请人： Satoshi Watanabe ,  Shigehiro Nagura ,  Toshinobu Ishihara

    发明人： Satoshi Watanabe ,  Shigehiro Nagura ,  Toshinobu Ishihara

    IPC分类号： C08K5/09

    CPC分类号： C08K5/09

    摘要： A water-soluble coating composition for forming a layer to be placed on the upper surface of a resist is provided without use of Freons. The material includes an aqueous solution containing a) at least one water-soluble polymer selected from the group consisting of poly(N-vinylpyrrolidone) homopolymers and water-soluble copolymers of N-vinylpyrrolidone and other vinyl monomers, b) at least one fluorine-containing organic acid, and c) at least one amino acid derivative. The film formed through use of the material of the invention serves as both an anti-reflective film and a protective film. The material of the present invention provides a number of advantages in the formation of resist patterns, including excellent film-forming properties, excellent dimensional accuracy and aligning accuracy, simple and easy handling, high productivity, and good reproducibility.

    摘要翻译： 在不使用氟利昂的情况下，提供用于形成被放置在抗蚀剂的上表面上的层的水溶性涂料组合物。 该材料包括含有a）至少一种选自聚（N-乙烯基吡咯烷酮）均聚物和N-乙烯基吡咯烷酮和其它乙烯基单体的水溶性共聚物的水溶性聚合物的水溶液，b）至少一种含氟 - 含有机酸，和c）至少一种氨基酸衍生物。 通过使用本发明的材料形成的膜既用作抗反射膜又用作保护膜。 本发明的材料在形成抗蚀剂图形方面提供了许多优点，包括优异的成膜性能，优异的尺寸精度和对准精度，操作简便且易于操作，生产率高，再现性好。