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公开(公告)号：US12211954B2
公开(公告)日：2025-01-28
申请号：US17575565
申请日：2022-01-13
Applicant: SEIKO EPSON CORPORATION , SOPHIA SCHOOL CORPORATION
Inventor： Yohei Nakagawa , Katsumi Kishino
Abstract: A light emitting apparatus includes a laminated structure including a plurality of columnar portions. The plurality of columnar portions each includes a first semiconductor layer, a second semiconductor layer different from the first semiconductor layer in terms of conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a first section, and a second section that surrounds the first section in a plan view along a lamination direction in which the first semiconductor layer and the light emitting layer are laminated structured on each other and has a bandgap wider than a bandgap of the first section. The second section forms a side surface of each of the columnar portions.
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公开(公告)号：US12199408B2
公开(公告)日：2025-01-14
申请号：US17494815
申请日：2021-10-05
Applicant: SEIKO EPSON CORPORATION , SOPHIA SCHOOL CORPORATION
Inventor： Hiroki Nishioka , Katsumi Kishino
Abstract: A light emitting apparatus includes a laminated structure including a plurality of columnar section assemblies each formed of p columnar sections. The p columnar sections each include a light emitting layer. When viewed in the lamination direction of the laminated structure, the ratio of the maximum width to the minimum width of the light emitting layer in each of q first columnar sections out of the p columnar sections is greater than the ratio of the light emitting layer in each of r second columnar sections out of the p columnar sections. The light emitting layer in each of the p columnar sections does not have a rotationally symmetrical shape. The parameter p is an integer greater than or equal to 2. The parameter q is an integer greater than or equal to 1 but smaller than p. The parameter r is an integer that satisfies r=p−q.
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公开(公告)号：US11430659B2
公开(公告)日：2022-08-30
申请号：US16640780
申请日：2018-08-03
Applicant: Seiko Epson Corporation , Sophia School Corporation
Inventor： Takafumi Noda , Katsumi Kishino
IPC: H01L21/203 , H01L33/62 , H01S5/12
Abstract: A light-emitting device includes: a substrate; and a laminated structure provided at the substrate and having a plurality of columnar parts. The columnar part has: an n-type first semiconductor layer; a p-type second semiconductor layer; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; and an electrode provided on a side opposite to a side of the substrate, of the laminated structure. The first semiconductor layer is provided between the light-emitting layer and the substrate. An end part on a side opposite to a side of the substrate, of the light-emitting layer, has a first facet surface. An end part on a side opposite to a side of the substrate, of the second semiconductor layer, has a second facet surface. A relation of θ2≤θ1 is satisfied, where θ1 is a taper angle of the first facet surface, and θ2 is a taper angle of the second facet surface. θ1 is 70° or smaller, and θ2 is 30° or greater.
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公开(公告)号：US11380820B2
公开(公告)日：2022-07-05
申请号：US16802628
申请日：2020-02-27
Applicant: Seiko Epson Corporation , Sophia School Corporation
Inventor： Takafumi Noda , Katsumi Kishino
IPC: H01L33/24 , H01L33/18 , H01L27/15 , G03B21/20 , H01L33/40 , H01L33/32 , H01L33/06 , H01L33/00 , H01L33/44 , H01L33/12
Abstract: In a light emitting device, a columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is disposed between the substrate and the light emitting layer, the light emitting layer includes a first layer, and a second layer larger in bandgap than the first layer, the first semiconductor layer has a facet plane, the first layer has a facet plane, the facet plane of the first semiconductor layer is provided with the first layer, and θ2>θ1, in which θ1 is a tilt angle of the facet plane of the first semiconductor layer with respect to a surface of the substrate provided with the laminated structure, and θ2 is a tilt angle of the facet plane of the first layer provided to the facet plane of the first semiconductor layer with respect to the surface of the substrate.
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公开(公告)号：US11973318B2
公开(公告)日：2024-04-30
申请号：US17499847
申请日：2021-10-12
Applicant: SEIKO EPSON CORPORATION , SOPHIA SCHOOL CORPORATION
Inventor： Takafumi Noda , Shunsuke Ishizawa , Katsumi Kishino
CPC classification number: H01S5/34333 , H01S5/11 , H01S5/185 , H01S5/34346 , G03B21/2033 , H01S5/0218 , H01S5/04257
Abstract: A light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a columnar part, wherein the columnar part includes a first GaN layer having a first conductivity type, a second GaN layer having a second conductivity type different from the first conductivity type, and a light emitting layer disposed between the first GaN layer and the second GaN layer, the first GaN layer is disposed between the substrate and the light emitting layer, the light emitting layer has a first well layer as an InGaN layer, the first GaN layer has a c-face region, the first GaN layer has a crystal structure of a cubical crystal, and has a first layer constituting the c-face region, and a second layer as a GaN layer having a crystal structure of a hexagonal crystal is disposed between the first layer and the first well layer.
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Patent Agency Ranking
公开(公告)号：US11588300B2
公开(公告)日：2023-02-21
申请号：US17082475
申请日：2020-10-28
Applicant: Seiko Epson Corporation , Sophia School Corporation
Inventor： Hiroaki Jiroku , Katsumi Kishino
Abstract: The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diametrical size in the opening of the recessed part.
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公开(公告)号：US10833484B2
公开(公告)日：2020-11-10
申请号：US16521651
申请日：2019-07-25
Applicant: Seiko Epson Corporation , Sophia School Corporation
Inventor： Hiroki Nishioka , Katsumi Kishino
IPC: H01S5/00 , H01S5/42 , H01S5/187 , H01S5/323 , H01S5/34 , H01S5/10 , H01S5/40 , H01S5/183 , H01S5/343
Abstract: A light emitting apparatus including a plurality of first light emitters and a plurality of second light emitters that differ from the first light emitters in terms of resonance wavelength, in which the second light emitters are each disposed between each adjacent pair of the first light emitters, first light that resonates in the plurality of first light emitters is in phase, and second light that resonates in the plurality of second light emitters is in phase.
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公开(公告)号：US11508873B2
公开(公告)日：2022-11-22
申请号：US16829297
申请日：2020-03-25
Applicant: Seiko Epson Corporation , Sophia School Corporation
Inventor： Hiroki Nishioka , Katsumi Kishino
Abstract: There is provided a light emitting device including: a substrate; a laminated structure provided on the substrate and having a plurality of columnar portions, in which the columnar portion includes an n-type first semiconductor layer, a p-type second semiconductor layer, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, and a third semiconductor layer having a band gap larger than that of the light emitting layer, and the third semiconductor layer includes a first part provided between the light emitting layer and the second semiconductor layer, and a second part that is in contact with a side surface of the light emitting layer.
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公开(公告)号：US11158993B2
公开(公告)日：2021-10-26
申请号：US16646652
申请日：2018-09-05
Applicant: Seiko Epson Corporation , Sophia School Corporation
Inventor： Michifumi Nagawa , Katsumi Kishino
Abstract: A light-emitting device includes: a substrate; a laminated structure provided at the substrate and having a plurality of columnar parts; and an electrode provided on a side opposite to a side of the substrate, of the laminated structure. The columnar part has: a first semiconductor layer; a second semiconductor layer having a different electrical conductivity type from the first semiconductor layer; and an active layer provided between the first semiconductor layer and the second semiconductor layer. The laminated structure has: a light propagation layer provided between the active layers of the columnar parts that are next to each other; a first low-refractive-index part provided between the light propagation layer and the substrate and having a lower refractive index than a refractive index of the light propagation layer; and a second low-refractive-index part provided between the light propagation layer and the electrode and having a lower refractive index than the refractive index of the light propagation layer.
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公开(公告)号：US10608411B2
公开(公告)日：2020-03-31
申请号：US16286671
申请日：2019-02-27
Applicant: Seiko Epson Corporation , Sophia School Corporation
Inventor： Takafumi Noda , Katsumi Kishino
Abstract: A light-emitting device includes a substrate and a stack provided on the substrate. The stack includes a plurality of columnar portions each of which includes a first columnar portion and a second columnar portion which has a diameter smaller than a diameter of the first columnar portions. Each first columnar portion is provided between the substrate and the second columnar portions, and includes: a first semiconductor layer; a second semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer; and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of generating light. The first semiconductor layer is provided between the substrate and the light-emitting layer. Each second columnar portion includes a third semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer.
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