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公开(公告)号：US20240334736A1
公开(公告)日：2024-10-03
申请号：US18575411
申请日：2022-06-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yukinori SHIMA , Koji ONO , Masataka NAKADA , Rai SATO , Hiroki ADACHI
IPC: H10K50/813 , H10K59/131
CPC classification number: H10K50/813 , H10K59/131
Abstract: A display apparatus with high detection sensitivity of an image capturing function and high display quality is provided. The display apparatus includes a light-receiving device; a first light-emitting device including a first lower electrode whose end portion has a first tapered shape and a first organic compound layer having a shape along the first tapered shape; a second light-emitting device including a second lower electrode whose end portion has a second tapered shape and a second organic compound layer having a shape along the second tapered shape; a common electrode included in the first light-emitting device and the second light-emitting device; an insulating layer positioned between the first light-emitting device and the second light-emitting device and between the second light-emitting device and the light-receiving device; and an auxiliary wiring electrically connected to the common electrode. The auxiliary wiring is positioned over the common electrode and includes a region overlapping with the insulating layer.
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公开(公告)号：US20240038777A1
公开(公告)日：2024-02-01
申请号：US18224383
申请日：2023-07-20
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Masakatsu OHNO , Masataka NAKADA , Yukinori SHIMA , Masayoshi DOBASHI , Junichi KOEZUKA , Masami JINTYOU
IPC: H01L27/12
CPC classification number: H01L27/124 , H01L27/1259 , H01L2933/0066 , H01L33/62
Abstract: To provide a semiconductor device that occupies a small area. The semiconductor device includes a first conductive layer, first to fifth insulating layers, and a second conductive layer that are stacked in this order and further includes a semiconductor layer, a third conductive layer, and a sixth insulating layer. The semiconductor layer is in contact with the top surface of the first conductive layer, the side surfaces of the first to fifth insulating layers, and the second conductive layer. The sixth insulating layer is over the semiconductor layer. The third conductive layer is over the sixth insulating layer and overlaps with the semiconductor layer with the sixth insulating layer between the third conductive layer and the semiconductor layer. The first insulating layer includes a region having a higher hydrogen content than the second insulating layer. The fifth insulating layer includes a region having a higher hydrogen content than the fourth insulating layer. The third insulating layer contains oxygen.
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公开(公告)号：US20230341736A1
公开(公告)日：2023-10-26
申请号：US18216660
申请日：2023-06-30
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Yukinori SHIMA , Kenichi OKAZAKI , Natsuko TAKASE
IPC: G02F1/1368 , G02F1/1343 , G02F1/1362 , H01L27/12 , H01L29/786
CPC classification number: G02F1/1368 , G02F1/13439 , G02F1/136277 , G02F1/136286 , H01L27/1251 , H01L27/1225 , H01L29/78648 , G02F1/13454
Abstract: A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided.
The display device includes a display portion and a driver circuit portion. The display portion includes a liquid crystal element, a first transistor, a scan line, and a signal line. The driver circuit portion includes a second transistor. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. Each of the scan line and the signal line is electrically connected to the first transistor. The scan line and the signal line each include a metal layer. The structure of the first transistor is different from that of the second transistor. The first transistor is electrically connected to the pixel electrode. The first transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region have a function of transmitting visible light. Visible light passes through the first region and the liquid crystal element and is emitted to the outside of the display device.-
公开(公告)号：US20230093499A1
公开(公告)日：2023-03-23
申请号：US17994525
申请日：2022-11-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Yasuharu HOSAKA , Yukinori SHIMA , Kenichi OKAZAKI , Shunpei YAMAZAKI
IPC: G02F1/1368 , G02F1/1333 , G02F1/1362 , H01L27/12 , G02F1/1345 , G02F1/1335 , G02F1/1337
Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.
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公开(公告)号：US20220350213A1
公开(公告)日：2022-11-03
申请号：US17863575
申请日：2022-07-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kenichi OKAZAKI , Yukinori SHIMA , Daisuke KUROSAKI , Masataka NAKADA
IPC: G02F1/1362 , G02F1/1368
Abstract: The manufacturing yield of a display device is improved. The resistance of a display device to ESD is increased. The display device includes a substrate, a display portion, a connection terminal, a first wiring, and a second wiring. The first wiring is electrically connected to the connection terminal and includes a portion positioned between the connection terminal and the display portion. The second wiring is electrically connected to the connection terminal, is positioned between the connection terminal and an end portion of the substrate, and includes a portion in which a side surface is exposed at an end portion of the substrate. The display portion includes a transistor. The transistor includes a semiconductor layer, a gate insulating layer, and a gate electrode. The semiconductor layer and the second wiring include a metal oxide.
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Patent Agency Ranking
公开(公告)号：US20210184049A1
公开(公告)日：2021-06-17
申请号：US17182367
申请日：2021-02-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masami JINTYOU , Yasutaka NAKAZAWA , Yukinori SHIMA
IPC: H01L29/786 , H01L27/12
Abstract: The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.
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公开(公告)号：US20210184040A1
公开(公告)日：2021-06-17
申请号：US17160435
申请日：2021-01-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junichi KOEZUKA , Yukinori SHIMA , Suzunosuke HIRAISHI , Kenichi OKAZAKI
IPC: H01L29/786 , H01L29/423 , H01L27/12 , H01L29/66
Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device including an oxide semiconductor film. A method for manufacturing a semiconductor device includes the steps of forming a gate electrode and a gate insulating film over a substrate, forming an oxide semiconductor film over the gate insulating film, forming a pair of electrodes over the oxide semiconductor film, forming a first oxide insulating film over the oxide semiconductor film and the pair of electrodes by a plasma CVD method in which a film formation temperature is 280° C. or higher and 400° C. or lower, forming a second oxide insulating film over the first oxide insulating film, and performing heat treatment at a temperature of 150° C. to 400° C. inclusive, preferably 300° C. to 400° C. inclusive, further preferably 320° C. to 370° C. inclusive.
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公开(公告)号：US20210167223A1
公开(公告)日：2021-06-03
申请号：US17151941
申请日：2021-01-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junichi KOEZUKA , Kenichi OKAZAKI , Yukinori SHIMA , Yasutaka NAKAZAWA , Yasuharu HOSAKA , Shunpei YAMAZAKI
Abstract: A semiconductor device with favorable electrical characteristics is to be provided. A highly reliable semiconductor device is to be provided. A semiconductor device with lower power consumption is to be provided. The semiconductor device includes a gate electrode, a first insulating layer over the gate electrode, a metal oxide layer over the first insulating layer, a pair of electrodes over the metal oxide layer, and a second insulating layer over the pair of electrodes. The first insulating layer includes a first region and a second region. The first region has a region being in contact with the metal oxide layer and containing more oxygen than the second region. The second region has a region containing more nitrogen than the first region. The metal oxide layer has at least a concentration gradient of oxygen in a thickness direction, and the concentration gradient becomes high on a first region side and on a second region side.
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公开(公告)号：US20210020665A1
公开(公告)日：2021-01-21
申请号：US17043232
申请日：2019-04-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Kenichi OKAZAKI , Masami JINTYOU , Yukinori SHIMA
IPC: H01L27/12
Abstract: A semiconductor device having favorable and stable electrical characteristics is provided. The semiconductor device includes a first and a second transistor over an insulating surface. The first and the second transistors each include a first insulating layer, a semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, and a first conductive layer overlapping with the semiconductor layer with the second insulating layer interposed therebetween. The first insulating layer includes a convex first region that overlaps with the semiconductor layer and a second region that does not and is thinner than the first region. The first conductive layer includes a part over the second region where a lower surface of the first conductive layer is positioned below a lower surface of the semiconductor layer. The second transistor further includes a third conductive layer overlapping with the semiconductor layer with the first insulating layer interposed therebetween.
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公开(公告)号：US20200328282A1
公开(公告)日：2020-10-15
申请号：US16758091
申请日：2018-10-23
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Masami JINTYOU , Takahiro IGUCHI , Yukinori SHIMA , Kenichi OKAZAKI
IPC: H01L29/423 , H01L29/51 , G02F1/1368 , H01L27/12
Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a semiconductor layer, and a first conductive layer. The second insulating layer is positioned over the first insulating layer and the island-shaped semiconductor layer is positioned over the second insulating layer. The second insulating layer has an island shape having an end portion outside a region overlapping with the semiconductor layer. The fourth insulating layer covers the second insulating layer, the semiconductor layer, the third insulating layer, and the first conductive layer, is in contact with part of a top surface of the semiconductor layer, and is in contact with the first insulating layer outside the end portion of the second insulating layer. The semiconductor layer contains a metal oxide, the second insulating layer and the third insulating layer contain an oxide, the first insulating layer contains a metal oxide or a nitride, and the fourth insulating layer contains a metal nitride.
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